应力导致InAs/In0.15Ga0.85As量子点结构中In0.15Ga0.85As阱层的合金分解效应研究

利用固源分子束外延技术，在In_0.15Ga_0.85As/GaAs量子阱生长了两个InAs/In_0.15Ga_0.85As量子点(DWELL)样品.通过改变其中一个InAs DWELL样品中的In_0.15Ga_0.85As阱层的厚度和生长温度，获得了量子点尺寸增大而且尺寸分布更均匀的结果.结合光致发光光谱(PL)和压电调制光谱(PzR)实验结果，发现该样品量子点的光学性质也同时得到 关键词： 合金分解效应 0.15Ga_0.85As量子点')" href="#">InAs/In_0.15Ga_0.85As量子点 光致发光光谱 压电调制光谱     

两个子带占据的In0.53Ga0.47As/In0.52Al0.48As量子阱中填充因子的变化规律

研究了低温(15K)和强磁场(0—13T)条件下, InP基In_053Ga_047As/In_052Al_048As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即ΔE₂₁=kω_c(其中k为整数),填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即ΔE₂₁=(2k+1)ω_c/2,填充因子出现奇数. 关键词： 053Ga_047As/In_052Al_048As量子阱')" href="#">In_053Ga_047As/In_052Al_048As量子阱 填充因子 磁输运     

单边掺杂InAlAs/InGaAs单量子阱中二维电子气的磁输运特性

研究了双子带占据的In_0.52Al_0.48As/In_0.53Ga_{0 .47}As单量子阱中磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应，获得了不 同子带电子的浓度、迁移率、有效质量和能级位置.低磁感应强度(B＜1.5T)下由迁移率谱和 多载流子拟合相结合的方法得到的各子带电子浓度与通过SdH振荡得到的结果一致.在d ²ρ/dB²-1/B的快速傅里叶变换 关键词： InAlAs/InGaAs单量子阱 SdH振荡 二维电子气 磁致子带间散射     

调制掺杂的应变In0.60Ga0.40As/In0.52Al0.48As多量子阱结构的光致发光谱研究

报道了调制掺杂的应变In_0.60Ga_0.40As/In_0.52Al_0.48As多量子阱中室温光致发光光谱.观察到n=1和2电子子带到n=1重空穴子带的强发光峰.在低温下可以观察到n=1电子子带到n=1轻空穴弱发光肩胛.通过对发光强度随激发功率及温度依赖关系以及理论模型的分析研究,认为该调制掺杂量子阱中辐射复合效率降低的主要机制是应变失配位错对载流子的陷阱作用.界面上的失配位错是陷阱的主要来源.并用静态的光致发光理论模型 关键词：     

双δ掺杂In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In_0.65Ga_0.35As/In_0.52Al_0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应，通过对纵向磁电阻SdH振荡的快速傅里叶变换分析，获得了各子带电子的浓度，并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程，自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明，势垒层的掺杂电子几乎全部转移到了量子阱中，转移率在95%以上. 关键词： SdH振荡 二维电子气 FFT分析 自洽计算     

In0.53Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有 关键词： 二维电子气 散射时间 自洽计算     

聚焦Ga+离子束注入方法研制半导体量子线结构

采用聚焦Ga⁺离子束注入方法,在GaAs/Al_0.3Ga_0.7As多量子阱材料上尝试制备半导体量子线。通过低温光致发光谱,测量了量子线的光电特性,并观察了由于沟道效应导致的深层量子阱的光谱蓝移。 关键词：     

In0.53Ga0.47As/In0.52Al0.48As量子阱中的正磁电阻效应

在低温强磁场条件下,对In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的 关键词： 二维电子气 正磁电阻 子带散射     

AlyGa1-yAs/AlxGa1-xAs量子阱激光器材料的光致荧光谱

测量了Al_yGa_1-yAs/Al_xGa_1-xAs量子阱激光材料的光致荧光谱.发现在室温连续激光器材料的光致荧光谱中有两个峰,而不能激射的材料中则只有一个很宽的峰.将高能峰归属于准费密能级电子的跃迁. 关键词：     

赝形InxGa1-xAs/In0.52Al0.48As异质结构中二维电子气的回旋共振光谱研究

采用回旋共振光谱方法，同时获得了具有较高电子气浓度的赝形In_0.80Ga_0.20As/In_0.53Ga_0.47As/In_0.52Al_0.48AsHEMT结构中最低两个子能带的费密面附近电子有效质量、 散射时间和迁移率.观察到该系统中能带非抛物性和波函数穿透所导致的电子回旋有效质量的显著增大效应，以及合金无序势和电离杂质散射所引起的电子散射时间和迁移率明显的子带依赖性. 关键词：     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×10¹⁸cm^-3增大到6.5×10¹⁸cm^-3,p型AlGaInP层的空穴浓度由6.0×10¹⁷cm^-3增大到1.1×10¹⁸cm^-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10¹⁷cm^-3和1.7×10¹⁷cm^-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.     

Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique

To gain a physical insight into the radiation effect on nanowires(NWs), the time resolved photoluminescence(TRPL)technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10~(12) cm~(-2) to 3.0 × 10~(13) cm~(-2). It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall(SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.     

A two-component model for the electron distribution function in ahigh-current pseudospark or back-lighted thyratron

Temperature, energy, and densities of two electron distribution function components, including an isotropic bulk part and an anisotropic beam, are analyzed for a hydrogen pseudospark and/or back-lighted thyratron switch plasma with a peak electron density of 1-3×10¹⁵ cm^-3 and peak current density of ≈10⁴ A/cm². Estimates of a very small cathode-fall width during the conduction phase and high electric field strengths lead to the injection of an electron beam with energies ⩾100 eV and density of 10¹³-10¹⁴ cm^-3 into a Maxwellian bulk plasma. Collisional and radiative processes of monoenergetic beam electrons, bulk plasma electrons and ions, and atomic hydrogen are modeled by a set of rate equations, and line intensity ratios are compared with measurements. Under these high-current conditions, for an initial density n_H2=10¹⁶ cm^-3 and electron temperature of 0.8-1 eV, the estimated beam density is ≈10¹³ -10¹⁴ cm^-3. These results suggest the possibility of producing in a simple way a very high-density electron beam     

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×10¹³ cm^-2 to 5×10¹⁵ cm^-2, the n-type dopant concentration gradually increases from 4.6×10¹⁸ cm^-2 to 4.5×10²⁰ cm^-2, while the generated vacancy density accordingly raises from 3.7×10¹³ cm^-2 to 3.8×10¹⁵ cm^-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10¹⁵ cm^-2, which ceases at the overdose of 5×10¹⁵ cm^-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.     

Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector

We demonstrate that the GaAs/AlGaAs nanowires(NWs) ensemble is fabricated into photo-detectors. Current–voltage(I–V) characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~(13) cm~(-2) to 5.0 × 10~(14) cm~(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.     

In-plane oriented CH_3NH_3PbI_3 nanowire suppression of the interface electron transfer to PCBM

One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research,we carried out a detailed study on electron transfer process at the interface of nanowire CH_3 NH_3 PbI_3(N-MAPbI_3)/Phenyl C61 butyric acid methyl-ester synonym(PCBM), as well as the interface of compact CH_3 NH_3 PbI_3(C-MAPbI_3)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI_3, N-MAPbI_3/PCBM,C-MAPbI_3, and C-MAPbI_3/PCBM from picosecond(ps) to hundred nanosecond(ns) time scale, it is demonstrated that electron transfer at N-MAPbI_3/PCBM interface is less efficient than that at C-MAPbI_3/PCBM interface. In addition, electron transfer efficiency at C-MAPbI_3/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0 × 1018 cm~(-3)–4.0 × 1018 cm~(-3). Hot electron transfer,which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0 × 10~(18) cm~(-3)–2.2 × 10~(18) cm~(-3).     

INFLUENCE OF C+-IMPLANTATION DOSE ON BLUE EMISSION AND MICROSTRUCTURES OF Si-BASED POROUS β-SIC

Crystal Si were implanted with different doses of C⁺ from 10¹¹ to 10¹⁷ cm^-2 at an energy of 50 keV. β-SiC precipitates were formed by thermal annealing at 1050 ℃ for 1 h and porous structures were prepared by electrochemical anodization. Under the excitation of ultraviolet, the samples, with C⁺ dose ≥10¹⁵ cm^-2 have intense blue emission which is stronger than the photoluminescence (PL) intensity of reference porous silicon (PS), and increases as C⁺ dose increases; the samples with C⁺ dose ≤10¹⁴ cm^-2 show similar PL spectra to those of PS. The blue peak intensity in PL spectra is correlated with the TO phonon absorption strength of β-SiC in infrared absorption spectra. The transmission electron microscopy study shows that the blue peak is also correlated with the microstructures. Because porous β-SiC is nanometer in size, it is suggested that the quantum confinement effect be responsible for the blue light emission.     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells

In this study,we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene)(P3HT) and a methanofuUerene derivative(PCBM).Organic semiconductors are also known to be not pure and they have defects and impurities,some of them are being charged and act as p-type or n-type dopants.Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings(N_d) that consist of 5 × 10~(17) cm~(-3),10~(18) cm~(-3),and 5 × 10~(18) cm~(-3).We perform the analysis of the doping concentration through the drift-diffusion model,and calculate the current and voltage doping dependency.We find that at three different n-dopant levels,optimum p-type doping is about N_p = 6 × 10~(18) cm~(-3).Simulation results have shown that by increasing doping level,V_(oc) monotonically increases by doping.Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N_p = 3 × 10~(18) cm~(-3).Moreover,this paper demonstrates that the optimum value for the p-doping is about N_p = 6 × 10~(18) cm~(-3) and optimum value for n-dopant is N_d = 10~(18) cm~(-3),respectively.The simulated results confirm that doping considerably affects the performance of organic solar cells.