Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique

To gain a physical insight into the radiation effect on nanowires(NWs), the time resolved photoluminescence(TRPL)technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10~(12) cm~(-2) to 3.0 × 10~(13) cm~(-2). It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall(SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.     

Further analysis of scintillation index for a laser beam propagating through moderate-to-strong non-Kolmogorov turbulence based on generalized effective atmospheric spectral model

A new expression of the scintillation index(SI) for a Gaussian-beam wave propagating through moderate-to-strong non-Kolmogorov turbulence is derived, using a generalized effective atmospheric spectrum and the extended Rytov approximation theory. Finite inner and outer scale parameters and high wave number "bump" are considered in the spectrum with a generalized spectral power law in the range of 3–4, instead of the fixed classical Kolmogorov power law of 11/3. The obtained SI expression is then used to analyze the effects of the spectral power law and the inner scale and outer scale on SI under various non-Kolmogorov fluctuation conditions. These results will be useful in future investigations of optical wave propagation through atmospheric turbulence.     

PASSIVATION OF THE InP(100) SURFACE USING (NH4)2Sx

InP(100) surface treated with (NH₄)₂S_x has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH₄)₂S_x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.     

Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector

We demonstrate that the GaAs/AlGaAs nanowires(NWs) ensemble is fabricated into photo-detectors. Current–voltage(I–V) characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~(13) cm~(-2) to 5.0 × 10~(14) cm~(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.     

钢-复合材料组合结构材料选型优化设计映射解法

建立了基于拓扑分布的钢-复合材料组合结构材料选型优化的数学模型,通过变量连续化,用映射函数对材料选型优化模型进行函数变换,使其能适应更多的优化算法进行求解.分别采用线性函数、指数函数、对数函数、阶跃函数、反三角函数和分段函数等对原始模型进行了变换,得到相应材料选型优化模型并求解.以组合浮筏材料选择动力学优化为例,对比研...     

不同生长时期盐藻无机元素分析

测定了对数生长期和稳定期盐藻中10种无机元素K、Na、Ca、Mg、P、Cu、Zn、Fe、Mn、Se的含量。结果表明，稳定期盐藻中K、Ca、Mg、Cu、Zn、Fe、Mn、Se的含量比对数生长期都有不同程度的增加，Na、P的含量反而降低。     

PASSIVATION OF THE InP(100) SURFACE USING (NH4)2Sx

InP(100) surface treated with (NH₄)₂S_x has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH₄)₂S_x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.