| 聚焦Ga+离子束注入方法研制半导体量子线结构 |
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| 引用本文： | 吴正云,黄启圣.聚焦Ga+离子束注入方法研制半导体量子线结构[J].物理学报,1996,45(3):486-490. |
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| 作者姓名： | 吴正云 黄启圣 |
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| 作者单位： | 厦门大学物理系,厦门361005 |
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| 摘 要： | 采用聚焦Ga+离子束注入方法,在GaAs/Al0.3Ga0.7As多量子阱材料上尝试制备半导体量子线。通过低温光致发光谱,测量了量子线的光电特性,并观察了由于沟道效应导致的深层量子阱的光谱蓝移。
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| 关 键 词： | 镓 离子束注入 半导体 量子线 |
| 收稿时间： | 1995-01-11 |
THE METHOD OF FOCUSED Ga+ ION BEAM IMPLANTATION TO FABRICATE SEMICONDUCTOR QUANTUM WELL WIRE |
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| WU ZHENG-YUN and HUANG QI-SHENG.THE METHOD OF FOCUSED Ga+ ION BEAM IMPLANTATION TO FABRICATE SEMICONDUCTOR QUANTUM WELL WIRE[J].Acta Physica Sinica,1996,45(3):486-490. |
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| Authors: | WU ZHENG-YUN and HUANG QI-SHENG |
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| Abstract: | Focused Ga+ ion beam implantation was used to make the semiconductor quantum well wire in GaAs/Al0.3Ga0.7As multi-quantum well structure. Making use of the low temperaturer PL spectra, we studied the optoelectronic properties of the quantum wire, and observed the blue shift caused by the channel effect in deep quantum well. |
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