Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector

We demonstrate that the GaAs/AlGaAs nanowires(NWs) ensemble is fabricated into photo-detectors. Current–voltage(I–V) characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~(13) cm~(-2) to 5.0 × 10~(14) cm~(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.     

光纤布拉格光栅γ 辐射损伤及其对光谱特性的影响

基于色心产生模型理论分析了电离辐射对光纤布拉格光栅的影响, 并推导出了光栅有效折射率变化与辐射剂量的函数关系式. 使用⁶⁰Co γ辐射源对光纤布拉格光栅进行了总剂量为1× 10⁶ rad的电离辐射实验, 实验结果与理论符合较好. 在辐射环境下, 光栅反射谱的峰值波长随着剂量增加向着长波方向移动, 由其计算所得的辐射致折射率变化规律与所得到的函数关系式相符. 该公式结合低剂量辐射实验可预测光栅在高剂量辐射下的性能变化, 对评估光栅产品抗辐射特性, 及筛选出性能较好产品有着实际应用价值.