两个子带占据的In0.53Ga0.47As/In0.52Al0.48As量子阱中填充因子的变化规律

研究了低温(15K)和强磁场(0—13T)条件下， InP基In_053Ga_047As/In_052Al_048As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明，在电子自旋分裂能远小于朗道能级展宽的情况下，如果两个子带分裂能是朗道分裂能的整数倍时，即ΔE₂₁=kω_c(其中k为整数)，填充因子为偶数；当两个子带分裂能为朗道分裂能的半奇数倍时，即ΔE₂₁=(2k+1)ω_c/2，填充因子出现奇数. 关键词： 053Ga_047As/In_052Al_048As量子阱')" href="#">In_053Ga_047As/In_052Al_048As量子阱 填充因子 磁输运

Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands

The magnetic field dependence of filling factors has been investigated on InP based In_053Ga_047As/In_052Al_048As quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 15K in a magnetic field range of 0 to 13T. Under the condiction that Laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i.e.ΔE₂₁=kω_c. If the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i.e.ΔE₂₁=(2k+1)ω_c/2, the filling factor is odd.