低温下单根ZnO纳米带电学性质的研究

用化学气相沉积法在硅衬底上合成了宽1 μm左右、长数十微米的ZnO纳米带. 采用微栅模板法得到单根ZnO纳米带半导体器件, 由I-V特性曲线测得室温下ZnO纳米带电阻约3 MΩ, 电阻率约0.4 Ω·cm. 研究了在20–280 K温度范围内单根ZnO纳米带电阻随温度的变化. 结果表明: 在不同温度区间内电阻随温度变化趋势明显不同, 存在两种不同的输运机制. 在130–280 K较高的温度范围内, 单根ZnO纳米带电子输运机制符合热激活输运机制, 随着温度继续降低(< 130 K), 近邻跳跃传导为主导输运机制. 关键词： ZnO 纳米带 低温 输运机制     

室温下溅射法制备高迁移率氧化锌薄膜晶体管

为降低氧化锌薄膜晶体管(ZnO TFT)的工作电压,提高迁移率,采用磁控溅射法在氧化铟锡(ITO)导电玻璃基底上室温下依次沉积NbLaO栅介质层和ZnO半导体有源层,制备出ZnO TFT,对器件的电特性进行了表征。该ZnO TFT呈现出优异的器件性能:当栅电压为5 V、漏源电压为10 V时,器件的饱和漏电流高达2.2 m A;有效场效应饱和迁移率高达107 cm~2/(V·s),是目前所报道的室温下溅射法制备ZnO TFT的最高值,亚阈值摆幅为0.28 V/decade,开关电流比大于107。利用原子力显微镜(AFM)对NbLaO和ZnO薄膜的表面形貌进行了分析,分析了器件的低频噪声特性,对器件呈现高迁移率、低亚阈值摆幅以及迟滞现象的机理进行了讨论。     

三材料线性掺杂石墨烯纳米条带场效应管性能

采用量子动力学模型研究单材料和三材料的石墨烯纳米条带场效应管(GNRFETs)在不同掺杂情况下的弹道输运特性,模型基于非平衡格林函数方程(NEGF)以及自洽的泊松方程的量子数值解.结果证明:三材料线性掺杂的石墨烯纳米条带场效应管(TL-GNRFET)不仅能够有效地抑制短沟道效应(SCE)和漏极势垒降低效应(DIBL),而且相对于其它几种结构而言,它有更好的亚阈值斜率以及更高的开关电流比.另外,还研究了非对称栅结构对石墨烯场效应管的影响,结果表明,当上栅和下栅同时向源端移动的时候,可以改善器件的电流开关比.     

ZnO纳米线场效应管的制备及I-V特性研究

采用静电探针和原子力探针技术,将化学气相沉积工艺制备的,长度为30-200μm,直径80-750 nm的单根半导体ZnO纳米线搭接在Au,Zn,Al不同功函的金属隔离沟道两端,构建出了最基本的ZnO纳米线绝缘栅场效应管.研究了沟道类型、纳米线直径、退火温度和外加栅压对ZnO纳米线场效应管I-V特性的影响.利用半导体与金属材料的肖特基接触、欧姆接触的产生机理及电子输运理论,对结果进行了分析和讨论.     

ZnO纳米线场效应管的制备及I-V特性研究

采用静电探针和原子力探针技术,将化学气相沉积工艺制备的,长度为30—200 μm,直径80—750 nm的单根半导体ZnO纳米线搭接在Au,Zn,Al不同功函的金属隔离沟道两端,构建出了最基本的ZnO纳米线绝缘栅场效应管. 研究了沟道类型、纳米线直径、退火温度和外加栅压对ZnO纳米线场效应管I-V特性的影响. 利用半导体与金属材料的肖特基接触、欧姆接触的产生机理及电子输运理论,对结果进行了分析和讨论. 关键词： ZnO纳米线 场效应管 I-V特性')" href="#">I-V特性     

ZnO/ZnMgO异质结场效应管的制备与性能研究

利用等离子体增强化学气相沉积(PECVD)技术,在ZnO/ZnMgO异质结构上制备SiO₂作为栅绝缘层,采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下,栅绝缘层产生钝化,从而能够改善器件的性能。     

溶胶-凝胶法制备ZnO纳米薄膜的工艺和应用

ZnO是一种重要的功能材料和新型的Ⅱ-Ⅵ族宽禁带半导体材料.采用溶胶-凝胶(Sol-gel)工艺在Si(100)、Si(111)和c面蓝宝石衬底上成功制备出高质量的ZnO纳米薄膜,并用XRD、SEM、AFM等方法研究了薄膜的特性.首次以制备的ZnO纳米薄膜为缓冲层,在n型Si(100)衬底上采用低压化学气相沉积(LPCVD)工艺外延生长了SiC薄膜,得到了低载流子浓度、高电子迁移率和高空穴迁移率的两种SiC薄膜样品,分析了该薄膜的性能.     

薄膜热处理对ZnO薄膜晶体管性能的提高

制备了两种以SiO2为绝缘层的底栅ZnO薄膜晶体管,分别以未退火和退火处理的ZnO薄膜作为有源层.与未退火处理的ZnO薄膜晶体管相比,退火处理的ZnO薄膜晶体管的饱和迁移率由2.3 cm2/(V·s)增大至3.12 cm2/(V·s),阈值电压由20.8V减小至9.9V,亚阈值摆幅由2.6 V/dec减小至1.9 V/...     

Al纳米颗粒表面等离激元对ZnO光致发光增强的研究

基于聚苯乙烯球自组装法,在P型氮化镓(P-GaN)衬底上制备了有序致密的掩模板;采用热蒸发法在该模板上沉积金属Al薄膜,通过甲苯溶液去除聚苯乙烯球,得到了金属Al纳米颗粒阵列;采用原子层沉积法,在Al纳米颗粒阵列表面依次沉积氧化铝(Al_2O_3)和氧化锌(ZnO).通过测试Al纳米颗粒阵列的消光谱以及ZnO薄膜的光致发光谱,研究了Al纳米颗粒表面等离激元与ZnO薄膜激子之间的耦合效应.实验结果表明:引入Al纳米颗粒后,在约380 nm位置附近的ZnO近带边发光峰积分强度增强了1.91倍.对Al纳米颗粒表面等离激元增强ZnO光致发光的机理进行探讨.     

堆叠栅介质对称双栅单Halo应变Si金属氧化物半导体场效应管二维模型

提出了一种堆叠栅介质对称双栅单Halo应变Si金属氧化物半导体场效应管(metal-oxide semiconductor field effect transistor,MOSFET)新器件结构.采用分区的抛物线电势近似法和通用边界条件求解二维泊松方程,建立了全耗尽条件下的表面势和阈值电压的解析模型.该结构的应变硅沟道有两个掺杂区域,和常规双栅器件(均匀掺杂沟道)比较,沟道表面势呈阶梯电势分布,能进一步提高载流子迁移率;探讨了漏源电压对短沟道效应的影响;分析得到阈值电压随缓冲层Ge组分的提高而降低,随堆叠栅介质高k层介电常数的增大而增大,随源端应变硅沟道掺杂浓度的升高而增大,并解释了其物理机理.分析结果表明:该新结构器件能够更好地减小阈值电压漂移,抑制短沟道效应,为纳米领域MOSFET器件设计提供了指导.     

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

In this paper, the normally-off N-channel lateral 4H–Si C metal–oxide–semiconductor field-effect transistors(MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–Si C/SiO_2 were examined by the measurement of HF I–V, G–V, and C–V over a range of frequencies. The ideal C–V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–Si C was reduced to 2 × 10~(11) e V~(-1)·cm~(-2), the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak fieldeffect mobility is about 32.5 cm~2·V~(-1)·s~(-1), and the maximum peak field-effect mobility of 38 cm~2·V~(-1)·s~(-1) was achieved in fabricated lateral 4H–Si C MOSFFETs.     

Nonideal double-slope effect in organic field-effect transistors

With the development of device engineering and molecular design,organic field effect transistors(OFETs)with high mobility over 10 cm2 V-1-s-1 have been reported.However,the nonideal doubleslope effect has been frequently observed in some of these OFETs,which makes it difficult to extract the intrinsic mobility OFETs accurately,impeding the further application of them.In this review,the origin of the nonideal double-slope effect has been discussed thoroughly,with affecting factors such as contact resistance,charge trapping,disorder effects and coulombic interactions considered.According to these discussions and the understanding of the mechanism behind double-slope effect,several strategies have been proposed to realize ideal OFETs,such as doping,molecular engineering,charge trapping reduction,and contact engineering.After that,some novel devices based on the nonideal double-slope behaviors have been also introduced.     

溶胶凝胶法制备以HfO2为绝缘层和ZITO为有源层的高迁移率薄膜晶体管

采用溶胶凝胶法制备了h-k氧化铪HfO₂薄膜, 经500℃退火后, 获得了高透过率、表面光滑、低漏电流和相对高介电常数的HfO₂薄膜. 并采用氧化铪作为绝缘层和锌铟锡氧化物作为有源层成功地制备了底栅顶接触结构薄膜晶体管器件. 获得的薄膜晶体管器件的饱和迁移率大于100 cm²·V^-1·s^-1, 阈值电压为-0.5 V, 开关比为5×10⁶, 亚阈值摆幅为105 mV/decade. 表明采用溶胶凝胶制备的薄膜晶体管具备高的迁移率, 其迁移率接近低温多晶硅薄膜晶体管的迁移率.     

ZnO薄膜的掺杂特性

通过MOCVD方法生长的ZnO薄膜一般为富锌生长,呈n型电导,要想得到高阻或低阻p-ZnO薄膜需要对其进行掺杂施主或受主杂质.主要研究在生长过程中通过NH₃对ZnO薄膜进行氮掺杂的情况,利用优化生长条件,即生长温度为610℃,Ar气(携带DEZn)流量为4sccm,O₂流量为120sccm,N₂流量为600sccm,得到在NH₃流量为80sccm时生长样品的结晶质量最高,在掺杂薄膜中NH₃流量高于或低于80sccm时,样品的表面形貌都将变差,只有在80sccm时表面粗糙度最低晶粒最小,表明该流量下获得的样品表面较光滑致密.所以80sccmNH₃流量为在R面蓝宝石上生长<110>取向ZnO薄膜的最佳掺杂流量.Hall测量结果表明,NH₃流量为50sccm的样品电导呈弱p型,电阻率为102Ω·cm,空穴载流子浓度为+1.69×10¹⁶cm^-3,迁移率为3.6cm²·V^-1·s^-1;当NH₃流量增加时样品的电导呈n型,电阻率最高达10⁸Ω·cm,我们认为与进入ZnO薄膜的H的量有关,并对其变化机理进行了详细的分析.     

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

AlGaN/GaN heterojunction field-effect transistors (HFETs) with p-GaN cap layer are developed for normally-off operation, in which an in-situ grown AlN layer is utilized as the gate insulator. Compared with the SiN_x gate insulator, the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region, which helps to positively shift the threshold voltage. In addition, the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage. Owing to the introduction of AlN layer, normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized. Furthermore, the field-effect mobility is approximately 1500 cm²·V^-1·s^-1 in the 2DEG channel, implying a good device performance.     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

The unique carrier mobility of Janus MoSSe/GaN heterostructures

Heterostructure is an effective approach in modulating the physical and chemical behavior of materials. Here, the first-principles calculations were carried out to explore the structural, electronic, and carrier mobility properties of Janus MoSSe/GaN heterostructures. This heterostructure exhibits a superior high carrier mobility of 281.28 cm²·V⁻¹·s⁻¹ for electron carrier and 3951.2 cm²·V⁻¹·s⁻¹ for hole carrier. Particularly, the magnitude of the carrier mobility can be further tuned by Janus structure and stacking modes of the heterostructure. It is revealed that the equivalent mass and elastic moduli strongly affect the carrier mobility of the heterostructure, while the deformation potential contributes to the different carrier mobility for electron and hole of the heterostructure. These results suggest that the Janus MoSSe/GaN heterostructures have many potential applications for the unique carrier mobility.     

Emerging weak antilocalization effect in Ta0.7Nb0.3Sb2 semimetal single crystals

Weak antilocalization (WAL) effect is commonly observed in low-dimensional systems, three-dimensional (3D) topological insulators and semimetals. Here, we report the growth of high-quality Ta_0.7Nb_0.3Sb₂ single crystals via the chemical vapor transport (CVT). Clear sign of the WAL effect is observed below 50 K, probably due to the strong spin−orbital coupling in 3D bulk. In addition, it is worth noting that a relatively large MR of 120% appears under 1 T magnetic field at T = 2 K. Hall measurements and two-band model fitting results reveal high carrier mobility (>1000 cm²·V⁻¹·s⁻¹ in 2–300 K region), and off-compensation electron/hole ratio of ~8:1. Due to the angular dependence of the WAL effect and the fermiology of the Ta_0.7Nb_0.3Sb₂ crystals, interesting magnetic-field-induced changes of the symmetry of the anisotropic magnetoresistance (MR) from two-fold (≤ 0.6 T) to four-fold (0.8–1.5 T) and finally to two-fold (≥ 2 T) are observed. This phenomenon is attributed to the mechanism shift from the low-field WAL dominated MR to WAL and fermiology co-dominated MR and finally to high-field fermiology dominated MR. All these signs indicate that Ta_0.7Nb_0.3Sb₂ may be a topological semimetal candidate, and these magnetotransport properties may attract more theoretical and experimental exploration of the (Ta,Nb)Sb₂ family.     

镧掺杂BaSnO3薄膜的电学和光学特性

利用射频磁控溅射法在(LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (001)单晶基底上生长了镧掺杂BaSnO₃外延薄膜. 通过Hall效应和热电势测量证实了镧掺杂BaSnO₃薄膜具有n型简并半导体特征, 并且基于载流子浓度和Seebeck系数计算出电子的有效质量为0.31m₀ (m₀为自由电子质量). 镧掺杂BaSnO₃薄膜在可见波段具有良好的透明性(透过率大于73%). 基于介电模型对薄膜的透过率曲线进行拟合, 从拟合结果中不仅得到了薄膜的厚度为781.2 nm, 能带宽度为3.43 eV、 带尾宽度为0.27 eV和复光学介电常数随波长的变化规律, 而且也强力地支持了基于电学参数计算电子有效质量的正确性.     

First-principles hybrid functional study of the electronic structure and charge carrier mobility in perovskite CH_3NH_3SnI_3

We calculate the electronic properties and carrier mobility of perovskite CH_3NH_3SnI_3 as a solar cell absorber by using the hybrid functional method. The calculated result shows that the electron and hole mobilities have anisotropies with a large magnitude of 1.4 × 10~4cm~2·V~(-1)·s~(-1) along the y direction. In view of the huge difference between hole and electron mobilities, the perovskite CH3NH3 Sn I3can be considered as a p-type semiconductor. We also discover a relationship between the effective mass anisotropy and electronic occupation anisotropy. The above results can provide reliable guidance for its experimental applications in electronics and optoelectronics.