| ZnO/ZnMgO异质结场效应管的制备与性能研究 |
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| 引用本文： | 朱振邦,顾书林,朱顺明,叶建东,黄时敏,顾然,郑有炓.ZnO/ZnMgO异质结场效应管的制备与性能研究[J].发光学报,2012,33(4):449-452. |
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| 作者姓名： | 朱振邦 顾书林 朱顺明 叶建东 黄时敏 顾然 郑有炓 |
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| 作者单位： | 南京大学 电子科学与工程学院和南京微结构国家实验室, 江苏 南京 210093 |
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| 基金项目： | 国家自然科学基金(61025020,60990312);国家“973”计划项目(2011CB302003);江苏省自然科学基金(SBK201121728)资助项目 |
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| 摘 要： | 利用等离子体增强化学气相沉积(PECVD)技术,在ZnO/ZnMgO异质结构上制备SiO2作为栅绝缘层,采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下,栅绝缘层产生钝化,从而能够改善器件的性能。
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| 关 键 词： | ZnO/ZnMgO 异质结场效应管 迁移率 |
| 收稿时间： | 2011/12/7 |
Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor |
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| ZHU Zhen-bang,GU Shu-lin,ZHU Shun-ming,YE Jian-dong, HUANG Shi-min,GU Ran,ZHENG You-.Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor[J].Chinese Journal of Luminescence,2012,33(4):449-452. |
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| Authors: | ZHU Zhen-bang GU Shu-lin ZHU Shun-ming YE Jian-dong HUANG Shi-min GU Ran ZHENG You- |
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| Institution: | National Laboratory of Solid State Microstructures and School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China |
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| Abstract: | The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor(HFET) were reported in this paper.The HFET was grown on α-plane sapphire substrate by metal-organic vapor phase epitaxy(MOVPE) technology,and was fabricated by a conventional photolithography technique combined with wet etching.The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS·mm-1 and mobility of 182 cm2·V-1·s-1 at room temperature.The property was limited by leakage current through the SiO2 gate insulator.At low temperature,the performance was improved due to the reduced leakage current. |
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| Keywords: | ZnO/ZnMgO heterostructure field-effect transistor(HFET) mobility |
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