银纳米颗粒阵列的表面增强拉曼散射效应研究

利用具有高密度拉曼热点的金属纳米结构作为表面增强拉曼散射(SERS)基底,可以显著增强吸附分子的拉曼信号.本文通过阳极氧化铝模板辅助电化学法沉积制备了高密度银(Ag)纳米颗粒阵列;利用扫描电子显微镜和反射谱表征了样品的结构形貌和表面等离激元特性;用1, 4-苯二硫醇(1, 4-BDT)为拉曼探针分子,研究了Ag纳米颗粒阵列的SERS效应.通过优化沉积时间,制备出高SERS探测灵敏度的Ag纳米颗粒阵列,检测极限可达10~(-13)mol/L;时域有限差分法模拟结果证实了纳米颗粒间存在强的等离激元耦合作用,且发现纳米颗粒底端的局域场增强更大.研究结果表明Ag纳米颗粒阵列可作为高效的SERS基底.     

多层金属纳米点阵的制备及其光学性质的研究

采用纳米球刻蚀法结合热蒸发技术制备了银和氧化硅交替层叠的纳米颗粒阵列. 扫描隧道显微镜测量结果表明, 该纳米阵列呈锥形多层结构. 分光光度计测量样品表明, 该纳米阵列在近红外波段存在明显的透射谷, 该透射谷来源于金属纳米颗粒局域等离激元的激发, 随着金属/介质层数的增多, 透射谷的位置向短波方向移动. 利用HFSS软件对该纳米阵列进行了仿真, 并分析了透射谷蓝移的原因. 关键词： 纳米球刻蚀技术 金属/介质纳米颗粒 表面等离子激元     

局域表面等离激元诱导的三次谐波增强效应

本文研究了二维金三角形纳米颗粒阵列的三次谐波非线性光学效应. 金三 角纳米颗粒阵列是基于微球刻印技术制成. 采用反射式光学系统, 观察到该纳米结构在光谱分辨的飞秒激光照射下产生明显的三次谐波. 研究表明, 当激光抽运频率接近金纳米颗粒的局域表面等离激元共振位置时, 三次谐波信号得到增强; 三次谐波辐射方向满足动量匹配条件. 关键词： 微球刻印 三次谐波产生 表面等离激元     

有序金纳米颗粒阵列的制备及光吸收特性研究

采用纳米球刻蚀技术中漂移法在玻璃基片上制备较大 面积不同直径的聚苯乙烯小球掩模板, 采用磁控溅射技术在掩模板上沉积不同厚度的金薄膜, 去除聚苯乙烯小球后, 通过扫描电子显微镜观察到周期排列的三角状金纳米颗粒点阵. 通过紫外-可见分光光度计测试所制备样品的光吸收特性, 发现表面等离子体共振峰随粒径增大发生红移, 随金纳米颗粒高度增加发生蓝移. 基于Mie理论, 利用Matlab软件编程对不同粒径的金阵列光吸收特性进行理论模拟, 并与实验结果进行对比. 关键词： 纳米球刻蚀 金纳米颗粒阵列 表面等离子体共振     

径向偏振光束激发的金属纳米球-纳米圆盘间隙模式等离激元共振光谱特性研究

提出了一种可用于表面增强拉曼测量的基于金属纳米圆盘上方放置金属纳米球颗粒构成的金属纳米结构，其在径向偏振光束激发下，由于金属纳米圆盘的呼吸模式表面等离激元共振的作用，可以形成纵向电场有效增强的间隙模式等离激元共振。对此进行了有限元模拟计算研究，计算结果证明该间隙模式的纵向电场分量相对于径向偏振入射光的有效激发横向电场分量增强了100倍以上。为了更清晰地展现这种新型纳米结构的光谱特性以及表面电场分布特征，同时对单个金属纳米圆盘，单个金属纳米球，金属薄膜，金属纳米球-金属薄膜这几种纳米结构在同一个模拟计算框架下进行了计算以及比较分析。由于可以把金属纳米球类比为金属探针的尖端，所提出的新型间隙模式也有望在针尖型拉曼增强中得到应用。     

后退火处理对铟锡氧化物表面等离激元共振特性的影响

近年来,表面等离激元光子学发展迅速,并取得了众多新成果.重掺杂半导体材料的表面等离激元共振性质的研究,也得到了人们越来越多的关注.本文通过纳米球刻印技术制备准三维二氧化硅纳米球阵列,在阵列上沉积铟锡氧化物薄膜,通过不同条件下的后退火处理改变铟锡氧化物薄膜的载流子浓度和载流子迁移率,并研究随着材料性质的改变其相应表面等离激元共振特性的变化规律.结果表明：退火处理均使铟锡氧化物薄膜的晶粒长大,光学透过率增加;在空气中退火会导致铟锡氧化物薄膜的载流子浓度减少,其表面等离激元共振峰红移;而真空退火则使铟锡氧化物薄膜的载流子浓度增加,共振峰蓝移.这些研究结果可为后续铟锡氧化物表面等离激元材料及器件的研究提供科学依据和实际指导.     

金纳米颗粒等离激元对不同形貌氧化锌薄膜发光性能的调控

采用化学气相沉积法制备了纳米棒状的氧化锌纳米结构薄膜和没有纳米棒的氧化锌薄膜,通过直流溅射在所制备的有纳米棒和没有纳米棒的氧化锌薄膜上淀积约3 nm厚的金纳米颗粒薄膜,研究了金纳米颗粒对不同表面形貌氧化锌薄膜的发光特性的影响。实验发现金纳米颗粒的存在使具有纳米棒的氧化锌薄膜的紫外发射增强,但使来自缺陷的可见光发射受到很大的抑制。通过比较有纳米棒和没有纳米棒的氧化锌薄膜在镀金纳米颗粒前后的发光特性,发现金表面等离激元对氧化锌发光的调控取决于氧化锌的表面形貌,纳米棒的存在更有利于金纳米颗粒等离激元调控氧化锌的发光特性。     

有序ZnO纳米阵列的制备及其光学特性

纳米球刻蚀技术和磁控溅射方法在普通玻璃衬底上制备有序氧化锌(ZnO)纳米阵列。利用扫描电子显微镜对样品表面形貌进行了观测,并对样品进行荧光(PL)光谱测试。结果表明,相比于普通ZnO薄膜,ZnO纳米阵列的有序结构可以提高在紫外区域的发光性能,减少蓝绿光的发射缺陷。研究了不同ZnO纳米阵列粒径大小和不同ZnO纳米阵列的厚度对其光学性质的影响。溅射时间30min的有序ZnO纳米阵列样品的质量和结晶状态较好,随着聚苯乙烯(PS)纳米球粒径的减小,样品吸收峰和荧光光谱均发生"蓝移"。     

一种用于LSPR传感器的准正方型银纳米颗粒阵列制备

首先控制聚苯乙烯纳米球(PS球)乳液在基片上的干燥温度,采用自组装方法,使用单一粒径的PS球制备出单层的PS球亚稳态正方排列结构模板。然后,在模板上通过磁控溅射法沉积一层银膜。利用纳米球光刻技术,去掉PS球模板得到二维正方点阵排列的准正方形银纳米颗粒阵列结构。     

表面增强光学力与光操纵研究进展

金属纳米结构在光激发下产生的表面等离激元,可导致亚波长光场局域、近场增强等效应,在表面增强光谱、超灵敏传感、微流控芯片、光学力等方面有重要的应用.对于光学力而言,首先,由于表面等离激元共振及其导致的电场增强对于入射波长、几何结构等具有较强的依赖性,而光学力又与电场分布密切相关,所以可利用光镊(会聚光束)来操纵或筛选金属纳米颗粒;其次,入射光激发金属纳米颗粒聚集体后,在间隙形成的较大的近场增强和梯度,也可看作一种"等离激元镊",用于操纵其他颗粒;最后,当入射光的偏振改变甚至为新型光束的情况下,光学操纵将具有更高的自由度.本文首先简要介绍了表面等离激元增强光学力的计算;之后围绕光镊作用于等离激元金属纳米颗粒,等离激元镊作用于其他颗粒,与偏振、新型光场或手性结构相关的等离激元光学力这三个方面,综述了近年来表面等离激元金属纳米颗粒光学力和光操纵的一些新进展;最后提出了表面增强光学力与光操纵的若干研究趋势.     

Low-voltage blue light emission from n-ZnO/p-GaN heterojunction formed by RF magnetron sputtering method

High quality n-ZnO/p-GaN heterojunction was fabricated by growing highly crystalline ZnO epitaxial films on commercial p-type GaN substrates via radio frequency (RF) magnetron sputtering. Low-voltage blue light emitting diode with a turn-on voltage of ∼2.5 V from the n-ZnO/p-GaN heterojunction was demonstrated. The diode gives a bright blue light emission located at ∼460 nm and a low threshold voltage of 2.7 V for emission. Based on the results of the photoluminescence (PL) and electroluminescence (EL) spectra, the origins of the EL emissions were studied in the light of energy band diagrams of ZnO–GaN heterojunction, and may attribute to the radiative recombination of the holes in p-GaN and the electrons injected from n-ZnO, which almost happened on the side of p-GaN layer. These results may have important implications for developing short wavelength optoelectronic devices.     

扩散掺杂的p型ZnO薄膜的光学性质研究

采用原子层沉积技术(atomic layer deposition)在InP衬底上生长ZnO薄膜,并在不同温度下(500和700 ℃)进行热退火处理,将P掺杂进入ZnO,得到p型ZnO薄膜。样品的光学特性通过光致发光光谱(photoluminescence, PL)来测定,得出热退火温度是影响P扩散掺杂的重要因素,低温PL光谱中,700 ℃热退火1 h样品的光谱展现出四个与受主相关的发射峰：3.351,3.311,3.246和3.177 eV,分别来自受主束缚激子的辐射复合(A°X)、自由电子到受主的发射(FA)、施主受主对的发射(DAP)以及施主受主对的第一纵向声子伴线(DAP-1LO),计算得到受主束缚能为122 meV,与理论计算结果一致。通过热扩散方式实现了ZnO薄膜的p型掺杂,解决了制约ZnO基光电器件发展的主要问题, 对ZnO基半导体材料及其光电器件的发展有重要意义。     

Controllable hydrothermal synthesis of ZnO nanowires arrays on Al-doped ZnO seed layer and patterning of ZnO nanowires arrays via surface modification of substrate

ZnO nanowire (NW) arrays are assembled on the Al-doped ZnO (AZO) seed layer by a hydrothermal process. Effects of the temperature and growth time of the hydrothermal process on morphological and photoluminescence properties of the as-assembled ZnO NW arrays are characterized and studied. Results indicate that the length and diameter of the ZnO NWs increase with a lengthening of the growth time at 80 °C and the hydrothermal temperature has a significant effect on the growth rate and the photoluminescence properties of the ZnO NW arrays. The patterned AZO seed layer is fabricated on a silicon substrate by combining a sol-gel process with an electron-beam lithography process, as well as a surface fluorination technique, and then the ZnO NW arrays are selectively grown on those patterned regions of the AZO seed layer by the hydrothermal process. Room-temperature photoluminescence spectra of the patterned ZnO NW arrays shows that only a strong UV emission at about 380 nm is observed, which implies that few crystal defects exist inside the as-grown ZnO NW arrays.     

Enhancing the ultraviolet-visible-near infrared photovoltaic responses of crystalline-silicon solar cell by using aluminum nanoparticles

We report to apply Al nanoparticles (NPs) to enhance the photovoltaic response of crystalline- or c-Si solar cell from the ultraviolet (UV) throughout the visible and near infrared (NIR) regimes. Al NPs were induced by solid thermal annealing and embedded in a SiO₂ layer that was to passivate the front side of solar cell. Upon the excitation of surface plasmons (SPs) on the Al NPs under light illumination, an enhancement of broadband absorption of the solar cell was observed. The incorporation of Al NPs led to a relative 13.8% increase in photoelectric conversion efficiency of c-Si solar cell, and an external quantum efficiency enhancement from the UV throughout the visible and NIR regimes. The improvement of c-Si solar cell performance was attributed to both effects of absorption and scattering by SPs.     

Optical Field Confinement Enhanced Single ZnO Microrod UV Photodetector

ZnO mirorods are synthesized using the vapor phase transport method, and the magnetron sputtering is used to decorate the Al nanoparticles(NPs) on a single ZnO microrod. The micro-PL and I-V responses are measured before and after the decoration of Al NPs. The FDTD stimulation is also carried out to demonstrate the optical field distribution around the decoration of Al NPs on the surface of a ZnO microrod. Due to an implementation of Al NPs, the ZnO microrod exhibits an improved photoresponse behavior. In addition, Al NPs induced localized surface plasmons(LSPs) as well as improved optical field confinement can be ascribed to an enhancement of ultraviolet(UV) response. This research provides a method for improving the responsivity of photodetectors.     

Au纳米颗粒和CdTe量子点复合体系发光增强和猝灭效应

利用金属蒸发真空多弧离子源注入机, 将Au离子注入到高纯石英玻璃来制备镶嵌有Au 纳米颗粒的衬底材料, 随后将化学方法合成的CdTe量子点旋涂在玻璃衬底上制备了Au纳米颗粒和CdTe量子点复合体系. 通过对镶嵌有Au纳米颗粒的衬底进行热退火处理来控制Au纳米颗粒的生长和分布, 系统研究了Au纳米颗粒的局域表面等离子体共振对CdTe量子点光致发光性能的影响. 利用光学吸收谱、原子力显微镜、透射电子显微镜和光致发光谱对样品进行了表征和测试. 光致发光谱表明, Au纳米颗粒的局域表面等离子体对CdTe量子点的发光有增强效应也有猝灭效应. 深入分析了Au纳米颗粒和CdTe量子点之间的相互作用过程, 提出了关于Au-CdTe 纳米复合体系中CdTe 发光增强和猝灭的新机理. 该实验结果为利用金属纳米颗粒表面等离子体技术制备高发光性能的光电子器件提供了较好的参考.     

Light Absorption of GaN Nanowire Array Cathode with Alkali Metal Nanoparticle Modified on the Surface

Since the adsorption of alkali metals is necessary for the negative electron affinity (NEA) of the photocathode, light absorption models of GaN nanowire (NW) arrays with alkali metal (Li, Na, K, and Cs) nanoparticles (NPs) modified on the NW surface based on the finite difference time domain (FDTD) method are constructed. The absorption spectra of hemispherical, spherical alkali metal NPs adsorbed on the outer surface of the NW, and spherical alkali metal embedded on the inner surface and center of the NW are studied. When the ratio of NW diameter to period (D/P) is greater than 0.5, the adsorption of alkali metal NPs cannot improve the absorption of GaN NW arrays. Alkali metal decoration can cause the absorption gain of NW arrays and optical loss of NPs, so the diameter and spacing of alkali metal NPs need to be balanced. When Li NPs are embedded in NW, plasmons can enhance the generation of electron-hole pairs, making GaN NWA obtain higher optical absorption and quantum efficiency. Therefore, the method of Li and Cs NPs embedded in GaN NW can provide a reference for the process NEA design, which will contribute to the development of the ultraviolet photocathode with high absorption characteristics.     

Effect of NH4OH concentration on p-type doped ZnO film by solution based process

Highly oriented and large scale p-type ZnO:Al:N films have been successfully synthesized by a simple, solution-based approach. In this approach, p-type doping of zinc oxide was achieved using combination of aqueous ammonia, zinc acetate and aluminium chloride. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), photoluminescence and Hall measurements indicate that the structure of the ZnO:Al:N films were highly influenced by aqueous ammonia concentration. Excessive aqueous ammonia results in randomly oriented film with excessive precipitation.     

ZnO薄膜的性质对水热生长ZnO纳米线阵列的影响

用水热法在ZnO薄膜上制备了直径、密度及取向可控的ZnO纳米线阵列。ZnO薄膜是通过原子层沉积(ALD)方法制备并在不同温度下退火处理得到的,退火温度对ZnO薄膜的晶粒尺寸、结晶质量和缺陷性质有很大的影响。而ZnO薄膜的性质对随后生长的ZnO纳米线的直径、密度及取向能起到调节控制的作用。通过扫描电子显微镜(SEM)、X射线衍射(XRD)仪和光致发光(PL)测试对ZnO薄膜和ZnO纳米线进行了表征。最后得到的垂直取向的ZnO纳米线阵列适合在发光二极管和太阳能电池等领域使用。     

Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering

We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corresponding to orange-red wavelength due to high density of oxygen interstitial, which was coincident with the deep level photoluminescence emission of undoped ZnO. The use of the Ga doped layers as a top layer provided the sufficient electron carriers to active region and resulted in the intense EL emission. The LED sample with small quantity of Mg incorporated in MgZnO as an n-type top layer showed more intense emission than the LED with ZnO, in spite of the deteriorated electrical and structural properties of the MgZnO film. This might be due to the improvement of output extraction efficiency induced by rough surface.