6H-SiC高场输运特性的多粒子蒙特卡罗研究

采用非抛物性能带模型,对6H-SiC高场电子输运特性进行了多粒子蒙特卡罗(Ensemble Monte Carlo)研究.研究表明：温度为296 K时,电子横向漂移速度在电场为2.0×104 V/cm处偏离线性区,5.0×105 V/cm处达到饱和.由EMC方法得到的电子横向饱和漂移速度为1.95×107 cm/s,纵向为6.0×106 cm/s,各向异性较为显著.当电场小于1.0×106 V/cm时,碰撞电离效应对高场电子漂移速度影响较小.另一方面,高场下电子平均能量的各向异性非常明显.电场大于2.0×105 V/cm时,极化光学声子散射对电子横向能量驰豫时间影响较大.当电场一定时,c轴方向的电子碰撞电离率随着温度的上升而增大.对非稳态高场输运特性的分析表明：阶跃电场强度为1.0×106 V/cm时,电子横向瞬态速度峰值接近3.0×107 cm/s,反应时间仅为百分之几皮秒量级.     

纤锌矿相GaN空穴输运特性的Monte Carlo模拟研究

用全带多粒子Monte Carlo方法模拟纤锌矿相(Wurtzite)GaN空穴输运特性的结果. 用经验赝势法计算得到能带结构数据. 模拟包含了声学声子散射，光学声子散射，极性光学声子散射，压电散射，电离杂质散射及带间散射等散射机理. 计算得到了空穴沿3个主要对称方向上的空穴平均漂移速度和平均能量与电场强度的关系曲线，室温下漂移速度呈现饱和特性. 在所研究的电场范围内，最大平均漂移速度约为6×10⁶cm s^-1，最大空穴平均能量约为0.12eV, 这些值均比电子的相应参数低很多. 还给出了空穴的扩散迁移率与杂质浓度关系的模拟结果. 关键词： 蒙特卡罗 氮化镓 输运特性 能带结构     

AlxGa1-xN/GaN异质结二维电子气磁输运性质研究

在1.5K低温和0～9T的高磁场下研究了AlGaG/GaN异质结二维电子气的磁输运性质.实验结果在4块样品中都观察到了Shubnikov-da HaSS振荡的双周期行为.表明异质结的三角势阱中有两个子带被电子占据.通过电子子带占据时电子浓度分配的线形行为得到第二子带被占据的阈值浓度为7.2×1012cm-2.通过对不同样品量子散射时间和输运迁移率的研究,说明在1.5K下远程离化施主散射在量子散射时间中起主要作用.     

表面低配位原子对声子的散射机制

由于纳米结构具有极高的表体比,声子-表面散射机制对声子的热输运性质起到关键作用.提出了表面低配位原子对声子的散射机制,并且结合量子微扰理论与键序理论推导出该机制的散射率.由于散射率正比于材料的表体比,这种散射机制对声子输运的重要性随着纳米结构尺寸的减小而增大.散射率正比于声子频率的4次方,所以这种散射机制对高频声子的作用远远强于对低频声子的作用.基于声子玻尔兹曼输运方程,计算了硅纳米薄膜和硅纳米线的热导率,发现本文模型比传统的声子-边界散射模型更接近实验值.此发现不仅有助于理解声子-表面散射的物理机制,也有助于应用声子表面工程调控纳米结构的热输运性质.     

In0.53Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有 关键词： 二维电子气 散射时间 自洽计算     

In0.53 Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In0.53 Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有关.     

单轴[110]应力硅电子迁移率

基于k·p微扰法研究单轴[110]应力作用下硅的导带结构,获得单轴[110]应力硅的导带底能量及电子有效质量.在此基础上,考虑电子谷间、谷内及电离杂质散射,采用弛豫时间近似计算单轴[110]应力硅沿不同晶向的电子迁移率.结果表明：单轴[110]应力作用下硅的电子迁移率具有明显的各向异性.在[001]、[110]及[110]输运晶向中,张应力作用下电子沿[110]晶向输运时迁移率有较大的增强,由未受应力时的1 450 cm²·Vs^-1提高到2 GPa应力作用下的2 500 cm²·Vs^-1.迁移率增强的主要原因是电子有效质量的减小,而应力作用下硅导带能谷分裂导致的谷间散射几率的减小对电子迁移率的影响并不显著.     

考虑界面散射的金属纳米线热导率修正

理论分析了声子和电子输运对Cu, Ag金属纳米线热导率的贡献. 采用镶嵌原子作用势模型描述纳米尺寸下金属原子间的相互作用, 应用平衡分子动力学方法和Green-Kubo函数模拟了金属纳米线的声子热导率; 采用玻尔兹曼输运理论和Wiedemann-Franz定律计算电子热导率; 并通过散射失配模型和Mayadas-Shatzkes模型引入晶界散射的影响. 在此基础上, 考察分析了纳米线尺度和温度的影响. 研究结果表明: Cu, Ag纳米线热导率的变化规律相似; 电子输运对金属纳米线的导热占主导地位, 而声子热导率的贡献也不容忽视; 晶界散射导致热导率减小, 尤其对电子热导率作用显著; 纳米线总热导率随着温度的升高而降低; 随着截面尺寸减小而减小, 但声子热导率所占份额有所增加. 关键词： 纳米线 热导率 表面散射 晶界散射     

外电场下极性量子阱中杂质态结合能

我们用变分方法研究了外电场下量子阱中的杂质态结合能,计算中既考虑了电子同体纵光学声子和界面光学声子的相互作用又考虑了杂质中心同体纵光学声子和界面光学声子的相互作用。我们以GaAs/Al_0.3Ga_0.7As量子阱为例,讨论了结合能随杂质位置、阱宽和电场强度的变化规律。得到了电子-声子相互作用对杂质态结合能和斯塔克效应的修正是相当明显的。     

用Monte Carlo方法模拟闪锌矿相ZnS电子的输运特性

用Monte Carlo方法模拟闪锌矿相(zinc blende)ZnS电子的输运特性.实验采用的是非抛物线模型计算电子的能带结构,模拟包含了声学声子散射,极性光学声子散射,压电散射,电离杂质散射,能谷间散射以及自散射等散射机理.通过模拟得到了ZnS材料的平均漂移速度、平均电子能量随电场强度变化的曲线图,以及总散射率随电子能量变化图,并将结果与文献报道的模拟结果[1]进行比较得出:本实验方法具有模型简单,计算速度快,获得结果比较准确的优点.     

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films(N_(Si)= 1.0 × 10~(18)–1.0 × 10_(19)cm~(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition(MOCVD) under low pressure on the ntype(001)6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy(UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy(XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.     

高能电子辐射下聚四氟乙烯深层充电特性

介质深层充放电现象是诱发航天器异常故障的重要因素之一.分析了高能电子辐射下介质内部电荷沉积、能量沉积特性和电导特性,考虑了真空与介质界面电荷对电场分布的影响,建立了介质二维深层充电的物理模型,并基于有限元方法实现了数值计算.计算了高能电子辐射下聚四氟乙烯的深层充电特性.结果表明:真空环境下,介质的表面存在较弱的反向电场,随着介质深度增大,电场减小至零,随后逐渐增大,最大值出现在靠近接地附近,但在接地点,电场存在小幅降低.分析了不同辐射时间下(1 h,1 d,10 d和30 d),介质内部最大电位和最大电场的时空演变特性.随着辐射时间的增加,最大电位由-128V增加至-7.9×104V,最大电场由2.83×105V·m-1增加至1.76×108V·m-1.讨论了入射电子束流密度对最大电场的影响,典型空间电子环境(1×10-10A·m-2)下,电子辐照10 d时,介质内部最大电场为2.95×106V·m-1.而恶劣空间电子环境(2×10-8A·m-2)下,电子辐射42 h,介质内部最大电场即达到108V·m-1,超过材料击穿阈值(约为108V·m-1),极易发生放电现象.该物理模型和数值方法可以作为航天器复杂部件多维电场仿真的研究基础.     

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

In this paper, the normally-off N-channel lateral 4H–Si C metal–oxide–semiconductor field-effect transistors(MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–Si C/SiO_2 were examined by the measurement of HF I–V, G–V, and C–V over a range of frequencies. The ideal C–V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–Si C was reduced to 2 × 10~(11) e V~(-1)·cm~(-2), the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak fieldeffect mobility is about 32.5 cm~2·V~(-1)·s~(-1), and the maximum peak field-effect mobility of 38 cm~2·V~(-1)·s~(-1) was achieved in fabricated lateral 4H–Si C MOSFFETs.     

6H-SiC电子输运的Monte Carlo模拟

从实际测量和单粒子Monte Carlo模拟两个方面研究了6H-SiC的电子输运规律,在模拟中考 虑了6H-SiC主要的散射机理,模拟的结果体现了6H-SiC具有良好的高温和高场特性以及迁移 率的各向异性,其横向迁移率和纵向迁移率相差近5倍.模拟结果和实验数据的对比说明了对 6H-SiC输运特性的模拟是正确的. 关键词： 6H-SiC Monte Carlo模拟 迁移率 散射机理     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

Single crystal growth of SiC and electronic devices

Single crystal growth of silicon carbide (Sic) and application to electronic devices are reviewed. In the crystal growth, bulk and homoepitaxial growth are picked up, and crystal quality and electrical properties are described. For electronic devices, various device processes are argued. Power devices based on Sic are stressed in this review.

Bulk single crystals of SiC can be grown by a sublimation method, and large-area 6H-SiC and 4H-SiC single crystals are obtained. The occurrence of SiC polytypes is affected by the growth condition, and can be controlled successfully by optimizing these conditions. 6H-SiC is grown on 6H-SiC (0001) Si-faces, and 4H-SiC on 6H-SiC (0001) C-faces. The crystallinity of bulk crystals is investigated by reflection high-energy electron diffraction (RHEED) and X-ray analysis, and characterization is carried out in detail by optical and electrical measurement.

Successful homoepitaxial vapor phase growth of SiC can be realized using off-axis (0001) substrates prepared by a sublimation method called “step-controlled epitaxy”. Since the crystallinity of epilayers is improved during the step-controlled epitaxy, this growth technique is a key for getting high-quality crystal surfaces. Impurity doping is controlled during homoepitaxial growth by employing impurity gases, such as N₂, trimethylaluminum (TMA), and B₂H₆. A wide-range of carrier concentrations of 5 × 10¹³～3 × 10¹⁸ cm^?3 for n-type and 5 × 10¹⁶～3 × 10²⁰ cm^?3 for p-type are realized. The impurity-incorporation mechanism in the step-controlled epitaxy is discussed based on the C/Si ratio dependence of impurity doping.

Electrical properties of SiC grown by step-controlled epitaxy are determined precisely. A high electron mobility of 720 cm²/Vs is obtained in an undoped 4H-SiC epilayer with an electron concentration of 2.5 × 10^l6 cm^?3 at 300 K. This electron mobility is about two times higher than that of 6H-Sic (～380 cm²/Vs). High breakdown fields of 1～5 × 10⁶ V/cm are obtained for both 6H- and 4H-SiC, one order of magnitude higher than those for Si. A high saturation electron drift velocity of 1.6 × 10⁷ cm/s is obtained in 4H-Sic, which may make possible high performance of high-frequency 4H-SiC power devices. Impurity levels and deep levels are investigated by Hall effect, admittance spectroscopy, and DLTS measurement. Metal/4H-SiC Schottky barrier heights are characterized and a strong dependence on metal work function without strong “pinning” is elucidated.

Device processes are described for ion implantation. Interface properties of SiO₂/SiC are characterized in detail using metal-oxide-semicond.     

In-plane oriented CH_3NH_3PbI_3 nanowire suppression of the interface electron transfer to PCBM

One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research,we carried out a detailed study on electron transfer process at the interface of nanowire CH_3 NH_3 PbI_3(N-MAPbI_3)/Phenyl C61 butyric acid methyl-ester synonym(PCBM), as well as the interface of compact CH_3 NH_3 PbI_3(C-MAPbI_3)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI_3, N-MAPbI_3/PCBM,C-MAPbI_3, and C-MAPbI_3/PCBM from picosecond(ps) to hundred nanosecond(ns) time scale, it is demonstrated that electron transfer at N-MAPbI_3/PCBM interface is less efficient than that at C-MAPbI_3/PCBM interface. In addition, electron transfer efficiency at C-MAPbI_3/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0 × 1018 cm~(-3)–4.0 × 1018 cm~(-3). Hot electron transfer,which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0 × 10~(18) cm~(-3)–2.2 × 10~(18) cm~(-3).     

金属有机物化学气相沉积生长GaN薄膜的室温热电特性研究

采用金属有机物化学气相沉积技术生长了不同掺杂浓度的GaN薄膜, 并且通过霍尔效应测试和塞贝克效应测试, 表征了室温下GaN薄膜的载流子浓度、迁移率和塞贝克系数. 在实验测试的基础上, 计算了GaN薄膜的热电功率因子, 并且结合理论热导率确定了室温条件下GaN薄膜的热电优值(ZT). 研究结果表明: GaN薄膜的迁移率随着载流子浓度的增加而减小, 电导率随着载流子浓度的增加而增加; GaN 薄膜材料的塞贝克系数随载流子浓度的增加而降低, 其数量级在100–500 μV/K范围内; GaN薄膜材料在载流子浓度为1.60×10¹⁸ cm^-3时, 热电功率因子出现极大值4.72×10^-4 W/mK²; 由于Si杂质浓度的增加, 增强了GaN薄膜中的声子散射, 使得GaN薄膜的热导率随着载流子浓度的增加而降低. GaN薄膜的载流子浓度为1.60×10¹⁸ cm^-3时, 室温ZT达到极大值0.0025.     

Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications

A GaN-based high electron mobility transistor (HEMT) with p-GaN islands buried layer (PIBL) for terahertz applications is proposed. The introduction of a p-GaN island redistributes the electric field in the gate-drain channel region, thereby promoting the formation of electronic domains in the two-dimensional electron gas (2DEG) channel. The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software. Simulation results show that the 0.2 μ m gate HEMT with a PIBL structure having a p-GaN island doping concentration (N_p) of 2.5×10¹⁸ cm^-3-3×10¹⁸ cm^-3 can generate stable oscillations up to 344 GHz-400 GHz under the gate-source voltage (V_gs) of 0.6 V. As the distance (D_p) between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm, the fundamental frequency decreases from 377 GHz to 344 GHz, as well as the ratio of oscillation current amplitude of the fundamental component to the average component I_f1/I_avg ranging from 2.4% to 3.84%.