| 金属有机物化学气相沉积生长GaN薄膜的室温热电特性研究 |
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| 引用本文： | 王保柱,张秀清,张奥迪,周晓然,Bahadir Kucukgok,Na Lu,肖红领,王晓亮,Ian T.Ferguson.金属有机物化学气相沉积生长GaN薄膜的室温热电特性研究[J].物理学报,2015,64(4):47202-047202. |
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| 作者姓名： | 王保柱 张秀清 张奥迪 周晓然 Bahadir Kucukgok Na Lu 肖红领 王晓亮 Ian T.Ferguson |
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| 作者单位： | 1. 河北科技大学信息科学与工程学院, 石家庄 050018;2. 北卡罗来纳大学夏洛特分校电子与计算机工程系, 夏洛特 28223;3. 北卡罗来纳大学夏洛特分校工程技术系, 夏洛特 28223;4. 中国科学院半导体研究所, 北京 100083 |
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| 基金项目： | 国家自然科学基金(批准号:61076052);河北省自然科学基金(批准号:F2013208171)资助的课题~~ |
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| 摘 要： | 采用金属有机物化学气相沉积技术生长了不同掺杂浓度的GaN薄膜, 并且通过霍尔效应测试和塞贝克效应测试, 表征了室温下GaN薄膜的载流子浓度、迁移率和塞贝克系数. 在实验测试的基础上, 计算了GaN薄膜的热电功率因子, 并且结合理论热导率确定了室温条件下GaN薄膜的热电优值(ZT). 研究结果表明: GaN薄膜的迁移率随着载流子浓度的增加而减小, 电导率随着载流子浓度的增加而增加; GaN 薄膜材料的塞贝克系数随载流子浓度的增加而降低, 其数量级在100–500 μV/K范围内; GaN薄膜材料在载流子浓度为1.60×1018 cm-3时, 热电功率因子出现极大值4.72×10-4 W/mK2; 由于Si杂质浓度的增加, 增强了GaN薄膜中的声子散射, 使得GaN薄膜的热导率随着载流子浓度的增加而降低. GaN薄膜的载流子浓度为1.60×1018 cm-3时, 室温ZT达到极大值0.0025.
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| 关 键 词： | GaN薄膜 热电性质 |
| 收稿时间： | 2014-10-17 |
Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition |
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| Wang Bao-Zhu,Zhang Xiu-Qing,Zhang Ao-Di,Zhou Xiao-Ran,Bahadir Kucukgok,Na Lu,Xiao Hong-Ling,Wang Xiao-Liang,Ian T. Ferguson.Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition[J].Acta Physica Sinica,2015,64(4):47202-047202. |
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| Authors: | Wang Bao-Zhu Zhang Xiu-Qing Zhang Ao-Di Zhou Xiao-Ran Bahadir Kucukgok Na Lu Xiao Hong-Ling Wang Xiao-Liang Ian T Ferguson |
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| Institution: | 1. Schoole of Information Science and Engineering, Hebei University of Science and Technology, Shijiazhuang 050018, China;2. Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte NC 28223, USA;3. Department of Engineering Technology, University of North Carolina at Charlotte, Charlotte NC 28223, USA;4. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The GaN thin films with different doping concentrations are grown by metal organic chemical vapor deposition. Carrier concentrations, mobilities and Seebeck coefficients of the GaN thin films are measured by Hall and Seebeck system at room temperature. The power factor and the thermoelectric figure of merit are calculated by experimental and theoretical data. The mobility and Seebeck coefficient of GaN thin film decrease with the increase of carrier concentration. The conductivity of GaN thin film increases with the increase of carrier concentration. The Seebeck coefficient of GaN thin film varies from 100 to 500 μV/K, depending on carrier concentration. The highest power factor is 4.72×10-4 W/mK2 when the carrier concentration is 1.60×1018 cm-3. The thermal conductivity of GaN thin film decreases with the increase of carrier concentration due to the increase of phonon scattering. The largest thermoelectric figure of merit of the GaN thin film at room temperature is 0.0025 when the carrier concentration is 1.60×1018 cm-3. |
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| Keywords: | GaN thin films thermoelectric properties |
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