30．4nmCr／AI／Cr自支撑滤光片的研制

依据材料的质量吸收系数和波长的关系,选择Cr和Al设计和制备30．4nm自支撑滤光片。在制备时以NaCl为脱膜剂,以热蒸发方式蒸镀Al,以电子束蒸发方式蒸镀Cr,制备了30．4nm的Cr／Al／Cr自支撑滤光膜,并对滤光片的表面缺陷进行了分析。通过显微镜观察,滤光膜均匀纯净,无明显针孔。Cr／Al／Cr自支撑滤光片在合肥国家同步辐射实验室进行了测量,Cr／Al／Or厚度为5nm／500nm／5nm和12．5nm／500nm／12．5nm的滤光片在30．4nm波长处的透过率分别为7．6％和4．6％,透过率曲线和理论计算基本一致。用紫外分光光度计测量得滤光片在200-800nm波长范围的透过率小于0．02％,满足使用要求。     

自支撑Zr膜制备及软X射线透过性能研究

软X射线波段滤光膜材料大都为自支撑金属薄膜,实验室环境下自支撑薄膜长期与空气接触表面易氧化,空气中的杂质原子进入自支撑薄膜内部,致使自支撑膜光学性能大幅下降.5 nm至20 nm软X射线波段Zr具有较低的质量吸收系数和较小的密度,在该波段Zr滤光膜透过率较高.采用脱模剂法制备自支撑Zr膜,在洁净的浮法玻璃上蒸镀一层Na...     

近红外宽截止窄带滤光膜的研制

在空间光通信系统中,为满足光学系统对滤光膜的特殊要求,研制出了一种近红外宽截止窄带滤光膜,实现了降低深背景范围内杂散光干扰的要求.通过对薄膜材料特性的研究、膜系设计曲线的不断优化,得到了相对易于制备的窄带滤光膜结构;采用电子束加热蒸发及离子辅助沉积技术制备薄膜,采用光控加晶控同时监控的方法监控膜层厚度,通过不断优化工艺参量,提高中心波长处的透过率,最终成功得到了光谱性能较好的滤光膜.经光谱测试表明:所镀膜层在800~1 530nm、1 600~1 800nm波段平均透过率低于0.3%,1 565nm单点透过率高于92%,通带半带宽为18nm,满足光学系统的使用要求.     

微结构窄带滤光片设计及制备工艺研究

为了提升微结构窄带滤光片的光谱透过率,增大微结构单元的制备精度,提出一种新的膜系镀制方法和微结构单元的制备方法。基于法布里-珀罗(F-P)多光束干涉仪原理设计了3种不同中心波长的窄带滤光片,采用光化学掩模分离法和PECVD技术相结合,制备出3种中心波长分别为480 nm、520 nm和590 nm,峰值透过率均大于80%,半宽度30 nm~50 nm,微结构单元的通道面积为50 μm×50 μm的窄带滤光片。光谱透过率得到了提升的同时微结构单元边缘整齐、分界线清晰,精度也得到了有效地增加,达到μm量级。     

矩形波宽带通滤光膜研究

对矩形波宽带通滤光片进行了深入研究,提出了一种设计、制备矩形波宽带通滤光片的方法。使用该方法设计并制备了400 nm～1 100 nm波段,中心波长λ₀=515 nm,透射带λ=λ₀±25 nm,透射带平均透射率■≥92%,截止带λ=400 nm～475 nm、λ=555 nm～1 100 nm,截止带透射率小于0.1%的矩形波宽带通OD3-A滤光片。对样片光谱进行了测试,结果满足需求。该方法设计、制备矩形波宽带通滤光片克服了F-P型窄带滤光膜监控精度要求高、通带宽带窄、成本高以及传统长、短波截止膜组合方式膜层总厚度过大、通带透过率低、波形矩形度差的缺点。     

中波红外3 μm～5 μm宽带通滤光片的研制

 中波红外宽带通滤光膜通常膜系层数多,膜层总厚度非常大（厚度达到10 μm左右）,膜层的镀制工艺难度较大。通过分析红外带通滤光片几种设计方法的特点,并结合实际镀制工艺技术,采用了长波通与短波通及非规整薄膜设计技术相结合的方法,设计了以锗材料为基底的中波3 μm～５ μm宽带通滤光膜。该设计大幅度降低了膜层的总厚度（约为8.65 μm）,缩短了膜层的镀制周期,提高了膜层的牢固度;在膜层的镀制工艺过程中,通过改变薄膜材料的蒸发速率、修正蒸发硫化锌材料时电子枪的扫描方式、调整蒸发材料在坩埚中的装载方法,使膜层获得了优异的光谱性能,其通带平均透过率大于96%,截止区域的平均透过率小于1%。     

自支撑Zr膜制备及软X射线透过性能研究

软X射线波段滤光膜材料大都为自支撑金属薄膜,实验室环境下自支撑薄膜长期与空气接触表面易氧化,空气中的杂质原子进入自支撑薄膜内部,致使自支撑膜光学性能大幅下降.5 nm至20 nm软X射线波段Zr具有较低的质量吸收系数和较小的密度,在该波段Zr滤光膜透过率较高.采用脱模剂法制备自支撑Zr膜,在洁净的浮法玻璃上蒸镀一层NaCl做为脱膜剂,直流磁控溅射沉积Zr膜,脱膜后的到自支撑Zr膜.为防止薄膜表面氧化及空气中杂质原子进入薄膜内部,在Zr膜两面各直流磁控溅射沉积一层10 nm厚的C或Si膜作为保护膜,得到C/Zr/C、Si/Zr/Si复合膜,测试结果显示C或Si膜的引入对于自支撑Zr膜光学性能基本无影响.     

1555nm宽带通滤光膜的设计和优化

针对对空间通信的特殊需求,设计并制备了1 555 nm波段的高透过率、宽带通滤光膜,该滤光膜在高温高湿环境下能够稳定工作。根据薄膜设计理论,选取折射率差大的TiO2和SiO2作为镀膜材料,采用规整膜系进行膜系设计。借助Optilayer软件,采用针形优化和双面镀膜方法,得到优化的非规整膜系。采用直接与间接监控相结合的手段监控薄膜生长,并探讨了薄膜的生长条件。在电子束蒸发离子辅助沉积条件下,制备出中心波长处透过率达到97%,带宽为50 nm的滤光膜。在100℃高温和-30℃低温各保持3 h的条件下,波长漂移仅0.2 nm,具有高的稳定性和可靠性,满足空间通信的使用要求。     

红外线治疗仪中宽波段带通滤光片的研究

研究了一种用于红外线治疗仪的新型滤光片.该滤光片通过对红外线治疗仪光源所发出的光进行选择性滤波,能够降低部分波段光的承载能量,提高治疗仪的安全使用性能.针对红外线治疗仪对滤光片的使用要求,选择Ti3O5和SiO2作为高低折射率材料,采用电子束加热蒸发方式,配合离子辅助淀积技术,利用石英晶控控制法对膜层厚度进行监控,通过反复优化各项工艺参量,制备出在600~1 200nm波段平均透过率高于92%,300~550nm、1 270~2 000nm波段平均透过率低于2%的宽波段带通滤光片.研究中运用"拆分技术要求"的设计思想,对颜色片进行双面镀制,解决了单面膜层过厚难以制备的问题,降低了制备难度,易于批量生产.测试结果表明,该滤光片满足使用要求.     

自支撑聚酰亚胺/锆膜的制备及性能改善

 采用直流磁控溅射法制备自支撑锆(Zr)膜,采用二步法制备聚酰亚胺(PI)膜,在Zr膜表面沉积PI膜得到自支撑PI/Zr复合膜。均苯四甲酸酐(PMDA)和二甲基二苯醚(ODA)在二甲基乙酰胺(DMAC)中反应得到聚酰胺酸(PAA),然后PAA高温亚胺化得到PI;PI成膜时采用提拉法成膜。经国家同步辐射实验室计量线站测定,实际测量结果与理论分析一致,PI膜的引入虽然会导致自支撑薄膜透过率有所下降,但在类镍-银软X射线13.9 nm波段PI(200 nm)/Zr(300 nm)和PI(200 nm)/Zr(400 nm)自支撑薄膜的透过率仍然分别达到14.9%和7.5%。     

Surface morphology and the phase formation at Cr/Si system

Metal silicide technology has been attracting attention worldwide and it constitutes an active, frontier area of research. Research in this area has not only stimulated the exploration of new phenomena, but is also leading to a technological revolution. Electron beam evaporation in ultra high vacuum (UHV) environment is one of the best techniques to grow thin metal film on Si substrate. Metal silicide contact is an interesting and important part of integrated circuit. Due to selective growth and high thermal stability metal silicides are used in very large scale integrated (VLSI) and ultra large scale integrated (ULSI) applications. In this paper our interest is to show GIXRD, XRR and SPM measurement on C (2 nm)/Cr (25 nm)/Si (1 0 0) system in which thin films were deposited using electron beam evaporation technique at 2 × 10⁻⁸ Torr vacuum. The capping layer of 2 nm carbon is deposited to stop contamination. The C (2 nm)/Cr (25 nm)/Si (1 0 0) system were annealed in 10⁻⁵ Torr vacuum at temperatures 300-600 °C to study the formation of chromium silicide. Structural properties at the interface has been studied by grazing incidence X-ray diffraction (GIXRD), which shows formation of Cr₃Si and CrSi₂ as a result of interface mixing due to annealing. The morphology of the system was investigated by AFM in tapping mode. It was found that nano-rod type structures were formed with annealing at 600 °C temperature.     

4.48 nm正入射软X射线激光用Cr/C多层膜高反射镜的研制

针对4.48nm类镍钽软X射线激光及其应用实验,设计制备了工作于这一波长的近正入射多层膜高反射镜。选择Cr/C为制备4.48nm高反射多层膜的材料对,通过优化设计,确定了多层膜的周期、周期数以及两种材料的厚度比。模拟了多层膜非理想界面对高反射多层膜性能的影响。采用直流磁控溅射方法在超光滑硅基片上实现了200周期Cr/C多层膜高反射镜的制备。利用X射线衍射仪测量了多层膜结构,在德国BessyⅡ同步辐射上测量了在工作波长处多层膜反射率,测量的峰值反射率达7.5%。对衍射仪测量的掠入射反射曲线和同步辐射测量的反射率曲线分别进行拟合,得到的粗糙度和厚度比的结果相近。测试结果表明,所制备的Cr/C多层膜样品结构良好,在指定工作波长处有较高的反射峰,达到了设计要求。     

30.4 nm波长SiC/Mg多层膜反射镜

波长30.4 nm的He-II谱线是极紫外天文观测中最重要的谱线之一,空间极紫外太阳观测光学系统需要采用多层膜作为反射元件。为此研究了SiC/Mg、B4C/Mg、C/Mg、C/Al、Mo/Si、B4C/Si、SiC/Si、C/Si、Sc/Si等材料组合的多层膜在该波长处的反射性能。基于反射率最大与多层膜带宽最小的设计优化原则,选取了SiC/Mg作为膜系材料。采用直流磁控溅射技术制备了SiC/Mg多层膜,用X射线衍射仪测量了多层膜的周期厚度,用国家同步辐射计量站的反射率计测量了多层膜的反射率,在入射角12°时,实测30.4 nm处的反射率为38.0%。     

High-temperature oxidation resistant (Cr, Al)N films synthesized using pulsed bias arc ion plating

(Cr, Al)N films were deposited by pulsed bias arc ion plating on HSS and 316L stainless steel substrates. With pulsed substrate bias ranging from −100 V to −500 V, the effect of pulsed bias on film composition, phase structure, deposition rate and mechanical properties was investigated by EDX, XRD, SEM, nanoindentation and scratch measurements. The high-temperature (up to 900 °C) oxidation resistance of the films was also evaluated. The results show that Al contents and deposition rates decrease with increasing pulsed bias and the ratio of (Cr + Al)/N is almost constant at 0.95. The as-deposited (Cr, Al)N films crystallize in the pseudo-binary (Cr, Al)N and Al phases. The film hardness increases with increasing bias and reaches the maximum 21.5 GPa at −500 V. The films deposited at −500 V exhibit a high adhesion force, about 70 N, and more interestingly good oxidation resistance when annealed in air at 900 °C for 10 h.     

4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备

在4H-SiC基底上设计并制备了Al2O3SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性.利用编程计算得到Al2O2和SiO2的最优物理膜厚分别为42.0 nm和96.1 nm以及参考波长λ=280 nm处最小反射率为0.09%.由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率.实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715.用电子束蒸发法在4H-SiC基底上淀积Al2O3SiO2双层膜,厚度分别为42 nm和96 nm.SEM截面图表明淀积的薄膜和基底间具有较强的附着力.实测反射率极小值为0.33%,对应λ=276 nm,与理论结果吻合较好.与传统SiO2单层膜相比,Al2O3SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景.     

Xenon-beam-induced atomic transport through Cr/Al and Cr2N/Al interfaces

Cr layers (60–75 nm) on Al substrates and Cr₂N layers (40–120 nm) on Al+3 wt.% Mg substrates were irradiated at 80 K and 300 K with 150–900 keV Xe-ions. The ion-beam-induced interface mixing was analyzed by means of Rutherford Backscattering Spectrometry (RBS). Both systems exhibit fairly small mixing rates, with those of Cr/Al being enhanced at 300 K target temperature, due to radiation-enhanced diffusion. The observed interface broadening is compared with predictions of ballistic and thermal spike mixing models. The low-temperature mixing rates in the system Cr/Al are underestimated by the ballistic model, but are rather well reproduced by local spike models. Mixing in the Cr₂N/Al system at both temperatures, on the other hand, seems to be rather well described by the ballistic model.     

Pole density distributions in Co/Cr bilayers and magnetic properties

With regard to sputtered Co (50 nm)/Cr (thickness: T_Cr = 0–600 nm) bilayers on glass substrates, the (110) pole density distributions (PDD) of the bcc Cr layer and the (00·2) PDD of the post-deposited hcp Co layer were quantitatively measured by X-ray diffraction. It was found that with increasing T_Cr, a transition of preferred orientation (PO) occured in the Cr layer, affecting the PO of the Co layer and its magnetic properties.     

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 × 10⁻⁴ Ωcm². Upon annealing at 250 °C for 1 min in N₂ ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 × 10⁻³ Ωcm². Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.     

A study of some optical properties of hafnium dioxide (HfO2) thin films and their applications

2 ), a series of films ranging in thickness from 50 to 10000 nm was prepared by using an electron beam gun inside an evacuated coating chamber of pressure 1×10^-5 mbar. The films were obtained on optical glass substrate by using oxygen with a backfill pressure of 2.4×10^-4 mbar during the deposition processes. The optical constants of the films were computed in the spectral wavelength region (350–2000 nm) from the transmission, reflection and thickness measurements. A computer program was created to determine two optical parameters n and k of the films, and this was achieved by entering the practical results into the computer program, which solved a series of equations for each wavelength. The effects created by changing various evaporation conditions (thickness, substrate temperature and evaporation rate) were studied in the spectral wavelength range, and the optimum values of the various conditions were obtained while achieving the best optical performance. According to the investigations of the HfO₂ material, two applications of the anti-reflection (AR) multi-layer coatings were achieved in two different spectral wavelength ranges. The first application was measured in the visible and near infra-red (VIS/NIR) range from 500 nm to 850 nm deposited on the glass substrate. The second application was measured in the infrared (IR) range from 7500 nm to 11500 nm deposited on germanium substrate. Computer modelling for designing the optical multi-layer system has been presented. The theoretical formulation and experimental results with the same specification were achieved. The correlation between the theoretical and the experimental results reveals a close agreement that offers a convenient method for predicting and controlling the multi-layer coating. By continuous measurement of the optical and mechanical (durability) performances of the coating process, high-quality films were produced in the manufacture of various optical devices. Received: 16 April 1997/Accepted: 5 August 1997     

248 nm高反膜抗激光损伤性能

用电子束蒸发法在熔融石英基底上沉积了适用于248nm的HfO2/SiO2高反膜,为提高其抗激光损伤能力,设计并制备了两种保护层,一种是在常规高反膜系的基础上镀制二分之一波长厚度的SiO2保护层,另一种是用Al2O3/MgF2做保护层。测试了3种高反膜样品的激光损伤情况,通过损伤形貌的变化分析了两种保护层使抗激光损伤能力提高的原因以及存在的问题。