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High-temperature oxidation resistant (Cr, Al)N films synthesized using pulsed bias arc ion plating |
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| Authors: | Min Zhang Guoqiang Lin Chuang Dong |
| Institution: | a School of Chemical Engineering and Materials, Dalian Polytechnic University, Dalian 116034, China b State Key Lab of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116085, China c Nissin Advanced Coatings (Dalian) Technology Co. Ltd., Dalian 116085, China d School of Materials Science and Engineering, Pusan National University, Busan 609-735, South Korea |
| Abstract: | (Cr, Al)N films were deposited by pulsed bias arc ion plating on HSS and 316L stainless steel substrates. With pulsed substrate bias ranging from −100 V to −500 V, the effect of pulsed bias on film composition, phase structure, deposition rate and mechanical properties was investigated by EDX, XRD, SEM, nanoindentation and scratch measurements. The high-temperature (up to 900 °C) oxidation resistance of the films was also evaluated. The results show that Al contents and deposition rates decrease with increasing pulsed bias and the ratio of (Cr + Al)/N is almost constant at 0.95. The as-deposited (Cr, Al)N films crystallize in the pseudo-binary (Cr, Al)N and Al phases. The film hardness increases with increasing bias and reaches the maximum 21.5 GPa at −500 V. The films deposited at −500 V exhibit a high adhesion force, about 70 N, and more interestingly good oxidation resistance when annealed in air at 900 °C for 10 h. |
| Keywords: | Arc ion plating Pulsed bias (Cr Al)N films High-temperature oxidation resistance |
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