The effects of substrate temperature on ZnO-based resistive random access memory devices

Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering.The ZnO thin films are grown at room temperature and 400 C substrate temperature,respectively.By comparing the data,we find that the latter device displayed better stability in the repetitive switching cycle test,and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased.After 104-s storage time measurement,this device exhibits a good retention property.Moreover,the operation voltages are very low:-0.3 V/-0.7 V(OFF state) and 0.3 V(ON state).A high-voltage forming process in the initial state is not required,and a multistep reset process is demonstrated.     

分子束外延生长的ZnO压电薄膜及其声表面波器件特性

用RF-MBE在蓝宝石(0001)衬底上引入MgO和低温ZnO双缓冲层生长了ZnO薄膜,并制备了声表面波器件。在ZnO薄膜中,仅观测到(0002)面的XRD,且衍射峰增强,半高宽减小,表明ZnO薄膜c轴取向性更好,晶体结构更优。室温下自由激子吸收峰更尖锐和吸收边更陡峭以及仅观测到自由激子发光,且发光线宽变窄、发光强度变大,表明ZnO薄膜缺陷密度减小,薄膜质量提高。测得该ZnO压电薄膜的电阻率高达4×10⁷ Ω·cm,其声表面波的速度高达5 010 m/s。     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.     

Evolution of the structural and optical properties of silver oxide films with different stoichiometries deposited by direct-current magnetron reactive sputtering

Nitrogen doping of silver oxide(AgxO) film is necessary for its application in transparent conductive film and diodes because intrinsic AgxO film is a p-type semiconductor with poor conductivity.In this work,a series of AgxO films is deposited on glass substrates by direct-current magnetron reactive sputtering at different flow ratios(FRs) of nitrogen to O2.Evolutions of the structure,the reflectivity,and the transmissivity of the film are studied by X-ray diffractometry and sphectrophotometry,respectively.The specular transmissivity and the specular reflectivity of the film decreasing with FR increasing can be attributed to the evolution of the phase structure of the film.The nitrogen does not play the role of an acceptor dopant in the film deposition.     

《消声器声学理论与设计》EI北大核心CSCD

噪声是一种环境污染,与水、气、渣污染一样,是威胁人类健康之四大污染之一。就噪声污染的治理：噪声控制的目的而言,旨在还我们以宁静,保护我们的健康。为此我们付出巨大的努力,并取得极大进展和成绩。各种噪声控制理论和技术——吸声、消声、隔声、隔振、阻尼、个人防护等,得到快速的发展。     

依来络兰黑R褪色光度法测定痕量铜

在氨水介质中,微量铜可催化亚硝酸钠氧化依来络兰黑R褪色,由此建立了一种高灵敏度光度法测定微量铜的方法。间接摩尔吸光系数ε530＝2．5×106L·mol-1·cm-1,线性范围为0～8μg／25ml,线性回归方程△A＝0．0123C+0．0076,r＝0．9994,方法用于环境废水中微量铜的测定,选择性好,灵敏度高,结果满意。     

Preparation of broadband antireflective coating by sol-gel method

A sol-gel method for the preparation of silica coating that varied in refractive index is developed. Silicon dioxide sol is obtained by hydrolysis and co-condensation reactions occurred in acid-catalyzed system. Surface morphology, refractive index, and transmission spectrum of the samples are studied. The results of transmission spectra of single-sided coatings show that the average transmittance of the samples increases about 4% compared with the uncoated one in the spectra range from 400 to 1 200 nm in the case of vertical incidence. For the double-sided coating the maximum transmittance is 99% at the wavelength of 840 nm.     

MBE生长ZnO薄膜的结构和光学特性的研究

用等离子体源辅助分子束外延(P-MBE)方法在蓝宝石(0001)面上生长出了高质量的ZnO薄膜,并对其结构和发光特性进行了研究。在XRD中只观察到ZnO薄膜的(0002)衍射峰,其半高宽(FWHM)值为0.18°;而在共振Raman散射光谱中观测到1LO(579 cm-1 )和2LO(1 152 cm-1 )两个峰位,这些结果表明ZnO薄膜具有单一c轴取向和高质量的纤维锌矿晶体结构。在吸收光谱中观测到自由激子吸收和激子-LO声子吸收峰,这表明在ZnO薄膜中激子稳定的存在于室温,并且两峰之间能量间隔为71.2 meV,与文献上报道的ZnO纵向光学声子能量(71 meV)相符。室温下在光致发光光谱(PL)中仅观测到位于376 nm处的自由激子发光峰,而没有观测到与缺陷相关的深能级发射峰,表明ZnO薄膜具有较高的质量和低的缺陷密度。     

低温热处理对α-Fe/Sm2Fe17Cx纳米复合永磁合金结构和磁性能的影响

采用X射线衍射分析、振动样品磁强计和差热分析研究了低温退火处理对Sm5Fe80Cu1Si5B3C2．5Zr3．5非晶合金晶化后纳米复合永磁体的组织结构、磁性能及晶化动力学的影响。结果表明,经400℃低温热处理后纳米复合合金中α-Fe相和Sm2（Fe,Si）17Cx相的组织结构均产生了明显改变,晶粒尺寸分别从原始态（未经处理）的50．6nm（α—Fe相）和20．6nm（Sm2（Fe,si）17Cx相）改变为36．5和24．4nm;体积分数分别从71．1％（α-Fe相）和28．9％（Sm2（Fe,si）17Cx相）改变为76．7％和23．3％;同时磁耦合性能明显增强。晶化动力学分析发现,低温热处理增大了非晶合金的短程有序范围,改变了原始态非晶合金中α—Fe相和Sm2（Fe,Si）17Cx相的晶化行为,这是优化α—Fe／Sm2（Fe,Si）17Cx复合纳米晶结构和提高磁耦合性能的根本原因。     

248 nm高反膜抗激光损伤性能

用电子束蒸发法在熔融石英基底上沉积了适用于248nm的HfO2/SiO2高反膜,为提高其抗激光损伤能力,设计并制备了两种保护层,一种是在常规高反膜系的基础上镀制二分之一波长厚度的SiO2保护层,另一种是用Al2O3/MgF2做保护层。测试了3种高反膜样品的激光损伤情况,通过损伤形貌的变化分析了两种保护层使抗激光损伤能力提高的原因以及存在的问题。