Laser-induced damage and periodic stripe structures of a CaF2 single crystal by an ArF excimer laser

The laser-induced damage threshold of a calcium fluoride(CaF2)single crystal was obtained by a 193 nm ArF excimer laser.The damage morphology of the crystal was analyzed.The results showed that the surface of CaF2 single crystal broke along the natural cleavage plane under ArF excimer laser irradiation,some fragments fell off,and Newton’s rings were observed on the curved fragments.Laser-induced periodic stripe structures(LIPSS)appeared on the surface layer beneath the fragments that peeled off.The spacing of LIPSS was measured,and the formation mechanism of LIPSS was analyzed based on the interference model.     

单晶二氧化钛纳米棒阵列的修饰及其在量子点敏化太阳电池中的应用(英文)

使用TiCl4溶液对单晶TiO2纳米棒阵列(TNRs)进行修饰,通过在TiO2纳米棒表面合成TiO2纳米颗粒来提高TNRs的表面积,提高TNRs对量子点的吸附能力,并在此基础上研究了TiCl4修饰时间对基于单晶TNRs的CdS/CdSe量子点敏化太阳电池光伏性能的影响,同时结合强度调制光电流谱(IMPS)研究了TiO2纳米棒阵列的电子传输性能.结果表明:TiCl4修饰可以大幅提高基于单晶TNRs的CdS/CdSe量子点敏化太阳电池的光伏性能,在TiCl4修饰时间为60 h时,其短路电流密度和光电转换效率分别由修饰前的(2.93±0.07)mA·cm-2和0.36%±0.02%提高至(8.19±0.12)mA·cm-2和1.17%±0.07%.同时,IMPS测试表明电子在单晶TiO2纳米棒阵列中的传输速率高于在TiO2纳米颗粒薄膜中的传输速率,证明了单晶TiO2纳米棒阵列在电子传输方面的优越性.     

248 nm高反膜抗激光损伤性能

用电子束蒸发法在熔融石英基底上沉积了适用于248nm的HfO2/SiO2高反膜,为提高其抗激光损伤能力,设计并制备了两种保护层,一种是在常规高反膜系的基础上镀制二分之一波长厚度的SiO2保护层,另一种是用Al2O3/MgF2做保护层。测试了3种高反膜样品的激光损伤情况,通过损伤形貌的变化分析了两种保护层使抗激光损伤能力提高的原因以及存在的问题。