Magnetic Tunnel Junctions with MgO／Al-O Composite Barriers

Magnetic tunnel junctions (MTJs) with structures of Ta(5 nm)/Cu(30nm)/Ta(5 nm)/Ni79Fe21 (5 nm)/Ir22Mn78 (12 nm)/Co62Fe20B18 (4 nm)/MgO(d)/Al(0.8 nm)-oxide/Co62Fe20B18 (6 nm)/Cu(30 nm)/Ta(5 nm) on a thermally oxidized Si wafer substrate were fabricated by magnetron sputtering and photolithographic patterning method. The tunnel magnetoresistance (TMR) and the bias dependence of TMR at room temperature for the MTJs with different thickness d of MgO are investigated. TMR values of over 50% as high as those of the MTJs with pure Al-O barrier and the TMR-voltage curve asymmetries, which vary with the increase of d, are observed in the MTJs with hybrid barriers after annealing at 265℃ for an hour. The dependences of TMR, resistance and coercivity of the MTJs with composite barriers on temperature are also investigated.     

Influence of temperature on thermal relaxation of exchange bias field in CoFe/Cu/CoFe/IrMn spin valve

A multilayered spin valve film with a structure of Ta(5 nm)/Co_(75)Fe_(25)(5 nm)/Cu(2.5 nm)/Co_(75)Fe_(25)(5 nm)/Ir_(20)Mn_(80)(12 nm)/Ta(8 nm) is prepared by the high-vacuum direct current(DC) magnetron sputtering. The effect of temperature on the spin valve structure and the magnetic properties are studied by x-ray diffraction(XRD), atomic force microscopy(AFM), and vibrating sample magnetometry. The effect of temperature on the exchange bias field thermomagnetic properties of multilayered spin valve is studied by the residence time of samples in a reverse saturation field. The results show that as the temperature increases, the Ir Mn(111) texture weakens, surface/interface roughness increases, and the exchange bias field decreases. Below 200℃, the exchange bias field decreases with the residence time increasing, and at the beginning of the negative saturation field, the exchange bias field Hex decreases first quickly and then slowly gradually. When the temperature is greater than 200℃, the exchange bias field is unchanged with the residence time increasing.     

Dependence of Growing High-Quality Gem Diamonds on Growth Rates by Temperature Gradient Method

Using the temperature gradient method under high pressure and high temperature, we investigate the dependence of growing high-quality gem diamond crystals on the growth rates. It is found that the lower the growth rate of gem diamond crystals, the larger the temperature range of growing high-quality gem diamond crystals, and the easier the control of temperature. In particular, when growing gem diamonds under a very-low growth rate, the temperature range of growing high-quality gem diamonds can extend from a low-temperature pure {100} growth region to {100} {111} growth regions, and finally to a high-temperature only-{111}-growth region. When growing gem diamonds under a high growth rate, some metal inclusions in the growing diamonds always exist near the seeds, no matter whether the growth temperature is high or low. This result is not in agreement with the result of Sumitomo Electric Corporation in Japan.     

Sm3（F3,Co,Mn）29 compounds：promising materials for permanent magnets

The outstanding hard-magnetic properties are reported of Sm_3Fe_{28.1-x}Co_xMo_{0.9} compounds with x=12, 14, 16. In this alloy system, only a small amount of Mo is needed to stabilize the 3:29 structure so that the magnetic properties are not seriously affected by the presence of this nonmagnetic element. Substitution of Co for Fe leads to a significant increase of the magnetic anisotropy, and for x≥14 the easy magnetization direction changes from easy plane to the easy axis. In this alloy system, the compound Sm_3Fe_{12.1}Co_{16}Mo_{0.9} is a very promising candidate for permanent magnet applications. Its room temperature saturation magnetization (μ_0M_s=1.5 T) and anisotropy field (B_{an}=6.5 T) are comparable to the values for Nd_2Fe_{14}B (μ_0M_s=1.6 T and B_{an}=7 T). However, the Curie temperature of Sm_3Fe_{12.1}Co_{16}Mo_{0.9} is 1020 K, which is appreciably higher than that for Nd_2Fe_{14}B (T_C=588 K).     

Effect of chemical ordering annealing on superelasticity of Ni–Mn–Ga–Fe ferromagnetic shape memory alloy microwires

Ni_(50)Mn_(25)Ga_(20)Fe_5 ferromagnetic shape memory alloy microwires with diameters of ～ 30–50 μm and grain sizes of ～ 2–5 μm were prepared by melt-extraction technique. A step-wise chemical ordering annealing was carried out to improve the superelasticity strain and recovery ratio which were hampered by the internal stress, compositional inhomogeneity,and high-density defects in the as-extracted Ni_(50)Mn_(25)Ga_(20)Fe_5 microwires. The annealed microwires exhibited enhanced atomic ordering degree, narrow thermal hysteresis, and high saturation magnetization under a low magnetic field. As a result, the annealed microwire showed decreased superelastic critical stress, improved reversibility, and a high superelastic strain(1.9%) with a large recovery ratio(96%). This kind of filamentous material with superior superelastic effects may be promising materials for minor-devices.     

Effects of underlayer materials and substrate temperatures on the structural and magnetic properties of Nd2Fe14B films

Thin films of Nd_2Fe_{14}B were fabricated on heated glass substrates by dc magnetron sputtering. Different material underlayers (Ta, Mo, or W) were used to examine the underlayer influence on the structural and magnetic properties of the NdFeB films. Deposited on a Ta buffer layer at 420℃, the 300 nm thick NdFeB films were shown to be isotropic. But when the substrate temperature T_s was elevated to 520℃, the Nd_2Fe_{14}B crystallites of (00l) plane were epitaxially grown on Ta (110) underlayer. In contrast, Mo (110) buffer layer could not induce any preferential orientation in NdFeB film irrespective of the substrate temperature or film thickness. The W buffer layer was found to be most effective for the nucleation of Nd_2Fe_{14}B crystallites with c-axis alignment perpendicular to the film plane when T_s<490℃. But at T_s=490℃ the magnetic layer became isotropic. The maximum coercivity obtained was about 995 kA/m for the 100nm film deposited on W underlayer at 490℃. These variations were tentatively explained in terms of the lattice misfit between the underlayer and the magnetic layer, combined with the considerations of underlayer morphologies.     

New aspects of HCI test for ultra-short channel n-MOSFET devices

Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices (75--90\,nm), which does not fit formal degradation power law well, will bring severe error in lifetime prediction. This phenomenon usually happens under high drain voltage ($V_{\rm d}$) stress condition. A new model was presented to fit the degradation curve better. It was observed that the peak of the substrate current under low drain voltage stress cannot be found in ultra-short channel device. Devices with different channel lengths were studied under different $V_{\rm d}$ stresses in order to understand the relations between peak of substrate current ($I_{\rm sub}$) and channel length/stress voltage.     

Different effect of NiMnCo or FeNiCo on the growth of type-Ⅱa large diamonds with Ti/Cu as nitrogen getter

In order to synthesize high-quality type-Ⅱa large diamond, the selection of catalyst is very important, in addition to the nitrogen getter. In this paper, type-IIa large diamonds are grown under high pressure and high temperature(HPHT) by using the temperature gradient method(TGM), with adopting Ti/Cu as the nitrogen getter in Ni_(70)Mn_(25)Co_5(abbreviated as NiMnCo) or Fe_(55)Ni_(29)Co_(16)(abbreviated FeNiCo) catalyst. The values of nitrogen concentration(N_c) in both synthesized high-quality diamonds are less than 1 ppm, when Ti/Cu(1.6 wt%) is added in the FeNiCo or Ti/Cu(1.8 wt%) is added in the NiMnCo. The difference in solubility of nitrogen between both catalysts at HPHT is the basic reason for the different effect of Ti/Cu on eliminating nitrogen. The nitrogen-removal efficiency of Ti/Cu in the NiMnCo catalyst is less than in the FeNiCo catalyst. Additionally, a high-quality type-Ⅱa large diamond size of 5.0 mm is obtained by reducing the growth rate and keeping the nitrogen concentration of the diamond to be less than 1 ppm, when Ti/Cu(1.6 wt%) is added in the FeNiCo catalyst.     

Effect of Co substitution on magnetic properties and magnetic entropy changes in LaFe11.83Si0.94Al0.23 compounds

Effect of Co substitution on magnetic properties and magnetic entropy changes in LaFe_{11.83}Si_{0.94}Al_{0.23} compounds has been investigated by means of magnetization measurements. X-ray diffraction shows the prepared compounds to be single phase with the cubic NaZn_{13}-type structure. Substitution of Co for Fe leads to an increase of Curie temperature of the material. The magnetic entropy changes in LaFe_{11.83}Si_{0.94}Al_{0.23} and LaFe_{11.03}Co_{0.80}Si_{0.94}Al_{0.23} compounds are 21.8J/(kg·K) to 16.9J/(kg·K) under a magnetic field change of 0－5T at Curie temperature, respectively. Giant magnetic entropy changes are attributed to the higher magnetization and the rapid change in magnetization at Curie temperature.     

Industrial diamonds grown in Ni70Mn25Co5--graphite--sulfur system under HPHT

This paper reports that diamond single crystals were synthesized from sulfur-added Ni70Mn25Co5+C system under high pressure and high temperature(HPHT).It was found that additive sulfur had inhibited the nucleation and growth of diamond to some extent.X-ray diffraction of the collected sample indicated that under the synthesis conditions,a new compound MnS had been formed through the reaction of additive sulfur with manganese in the catalyst.The MnS has a fcc structure,and its average crystal size was about 30 nm.By scanning electron microscope,the {111} surface of diamond was found to be flat,while there was usually a large depression on the central region of {100}.Further observation showed that there were many small upside-down pyramidal pits in the expression.The results of x-ray photoelectron spectroscopy shows that MnS can only be detected in the depression in the range of detection precision.It was inferred that MnS had been dissolved in the melted alloy during the growth experiment,and precipitated in the sequent quenching process.     

成分调制的La1－xSrxMnO3复合隧道结

利用磁控溅射和Sr成分的调制以及原位热处理方法，在10mm×10mm大小的(001) 取向SrTiO_３单晶衬底上制备出三明治结构为La_0.7Sr_0.3MnO３(100nm)/La_0.96Sr_0.04MnO_３ (5nm)/ La0.7Sr_0.3MnO_３ (100nm) 的隧道结外延薄膜，然后再次 利用磁控溅射方法，在三层单晶膜上方继续沉积Ir_２２Mn_７８(15n m)/Ni_７９Fe_２１(5nm)/Pt(20nm)等金属三层膜.最后利用深紫外曝 光和Ar离子束刻蚀等微加工技术，制备出长短轴分别为12和6μm或者8和4μm大小的椭圆形L a_１-xSr_xMnO_３成分调制的复合磁性隧道结.在4.2K和 外加磁场8 T的测试下，La_１-xSr_xMnO_３成分调制的复 合磁性隧道结其隧穿磁电阻(TMR)比值达到3270%, 直接从实验上证实了铁磁性La_{0.7Sr0.3MnO３金属氧化物的自旋极化率（97%）可接近100％，具 有很好的半金属性质. 关键词： １-x}Sr_xMnO_３')" href="#">La_１-xSr_xMnO_３ 半金属 成分调制 复合磁性隧道 结 隧穿磁电阻     

高磁电阻磁性隧道结的几种微制备方法研究

利用金属掩模法优化了制备磁性隧道结的实验和工艺条件，金属掩模的狭缝宽度为100 μm. 采用4 nm厚的Co₇₅Fe₂₅为铁磁电极和10或08 nm厚的铝氧化物 为势垒膜， 直接制备出了室温隧穿磁电阻（TMR）为30%—48％的磁性隧道结，其结构为Ta(5 nm)/Cu(25 nm)/Ni₇₉Fe₂₁(5 nm)/Ir₂₂Mn₇₈(10 nm)/ Co₇₅Fe₂₅ (4 nm)/Al(08 nm)-O/Co₇₅Fe₂₅(4 nm)/Ni₇₉Fe ₂₁(20 nm)/Ta(5 nm).同时，利用刻槽打孔法和去胶掀离法两种光刻技术并结合Ar离子束刻蚀及化学反应刻 蚀，制备出面积在4 μm×8 μm—20 μm×40 μm、具有室温高TMR和低电阻的高质量磁性 隧道结.300 ℃ 退火前后其室温TMR可分别达到22% 和50%.研究结果表明，采用光刻中的刻 槽打孔或去胶掀离工艺方法制备的小尺寸磁性隧道结，可用于研制磁动态随机存储器和磁读 出头及其他传感器件的磁敏单元. 关键词： 磁性隧道结 隧穿磁电阻 金属掩模法 光刻法     

Remanence Enhancement Effect in Ni_(0.7)Zn_(0.3)Fe_2O_4/Co_(0.8)Fe_(2.2)O_4 Ferrite Multilayer Film

Ni_(0.7)Zn_(0.3)Fe_2O_4/Co_(0.8)Fe_(2.2)O_4(NZFO/CFO) multilayer films are fabricated on Si(100) substrates by the chemical solution deposition method.The microstructure and magnetic properties are systematically investigated.The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 300 nm.The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films,which is in favor of the design and fabrication of modern electronic devices.     

Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method

The controlled fabrication method for nano-scale double barrier magnetic tunnel junctions (DBMTJs) with the layer structure of Ta(5)/Cu(10)/Ni₇₉Fe₂₁(5)/Ir₂₂Mn₇₈(12)/Co₆₀Fe₂₀B₂₀(4)/Al(1)–oxide/Co₆₀Fe₂₀B₂₀(6)/Al(1)–oxide/Co₆₀Fe₂₀B₂₀(4)/Ir₂₂Mn₇₈(12)/Ni₇₉Fe₂₁(5)/Ta(5) (thickness unit: nm) was used. This method involved depositing thin multi-layer stacks by sputtering system, and depositing a Pt nano-pillar using a focused ion beam which acted both as a top contact and as an etching mask. The advantages of this process over the traditional process using e-beam and optical lithography in that it involve only few processing steps, e.g. it does not involve any lift-off steps. In order to evaluate the nanofabrication techniques, the DBMTJs with the dimensions of 200 nm×400 nm, 200 nm×200 nm nano-scale were prepared and their R–H, I–V characteristics were measured.     

Laser glazing study of Co-based alloy and Ni-Nb-Cr alloy coating

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Composites of nanotubular polyaniline containing Fe3O4 nanoparticles

Results of charge-transport and magnetic measurements of nanotubular polyaniline (PANI) composites containing Fe_3O_4 nanoparticles (～10nm) synthesized by a "template-free" method are reported. The T^{-1/2} resistivity has been observed, and dc magnetic susceptibility data are fitted to an equation χ=χ^*_P+C/T. With increasing weight ratio of Fe_3O_4, the electrical conductivity and temperature- independent susceptibility χ^*_P increase, and the Curie-type susceptibility is suppressed at low temperatures. Further discussions have been given. The PANI-H_3PO_4/Fe_3O_4 composite containing 27wt% of Fe_3O_4 nanoparticles is superparamagnetic, exhibiting very little hysteresis even at 5K.     

Thermal Stability of CoFe/Cu/CoFe/IrMn Top Spin Valve

We present a study of thermal stability of the top spin valve with a structure of seed Ta （Snm）/Co75Fe25 （5 nm ） /Cu （2.5 nm） /Co75Fe25 （5 nm ） /Ir20Mn80（12 nm） /cap Ta （8 nm） deposited at room temperature by magnetron sputtering. A vibrating sample magnetometer fixed with a heater was used to record the magnetic hysteresis loops at variational temperatures and x-ray diffraction was performed to characterize the structure of the multilayer. The exchange field Hex and the coercivity of the pinned CoFe layer Hop decrease monotonically with increasing temperature. The coercivity of the free CoFe layer Hcf in the spin valve shows a maximum at 498K. The temperature dependences of Hex, Hop and Hcf have also been discussed.