Strain rate and cold rolling dependence of tensile strength and ductility in high nitrogen nickel-free austenitic stainless steel

The tensile strength and ductility of a high nitrogen nickel-free austenitic stainless steel with solution and cold rolling treatment were investigated by performing tensile tests at different strain rates and at room temperature. The tensile tests demonstrated that this steel exhibits a significant strain rate and cold rolling dependence of the tensile strength and ductility.With the increase of the strain rate from 10~(-4)s~(-1)to 1 s~(-1), the yield strength and ultimate tensile strength increase and the uniform elongation and total elongation decrease. The analysis of the double logarithmic stress–strain curves showed that this steel exhibits a two-stage strain hardening behavior, which can be well examined and analyzed by using the Ludwigson equation. The strain hardening exponents at low and high strain regions(n_2and n_1) and the transition strain(εL) decrease with increasing strain rate and the increase of cold rolling RA. Based on the analysis results of the stress–strain curves, the transmission electron microscopy characterization of the microstructure and the scanning electron microscopy observation of the deformation surfaces, the significant strain rate and cold rolling dependence of the strength and ductility of this steel were discussed and connected with the variation in the work hardening and dislocation activity with strain rate and cold rolling.     

Stability,electronic structures,and mechanical properties of Fe–Mn–Al system from first-principles calculations

The stability, electronic structures, and mechanical properties of the Fe–Mn–Al system were determined by firstprinciples calculations. The formation enthalpy and cohesive energy of these Fe–Mn–Al alloys are negative and show that the alloys are thermodynamically stable. Fe_3Al, with the lowest formation enthalpy, is the most stable compound in the Fe–Mn–Al system. The partial density of states, total density of states, and electron density distribution maps of the Fe–Mn–Al alloys were analyzed. The bonding characteristics of these Fe–Mn–Al alloys are mainly combinations of covalent bonding and metallic bonds. The stress-strain method and Voigt–Reuss–Hill approximation were used to calculate the elastic constants and moduli, respectively. Fe_(2.5)Mn_(0.5)Al has the highest bulk modulus, 234.5 GPa. Fe_(1.5)Mn_(1.5)Al has the highest shear modulus and Young's modulus, with values of 98.8 GPa and 259.2 GPa, respectively. These Fe–Mn–Al alloys display disparate anisotropies due to the calculated different shape of the three-dimensional curved surface of the Young's modulus and anisotropic index. Moreover, the anisotropic sound velocities and Debye temperatures of these Fe–Mn–Al alloys were explored.     

Regulating element distribution to improve magnetic properties of sintered Nd–Fe–B/Tb–Fe–B composite magnets

Nd content was varied in Nd_(13.2-x)Fe_(80.8+x)B_6(x = 0, 0.5, 1, and 1.5) to optimize the magnetic properties of sintered Nd–Fe–B/Tb–Fe–B composite magnets, which were prepared by mixing 9 g of Nd–Fe–B with 1 g of Tb_(17)Fe_(75)B_8 powder.In conventional magnets, by reducing Nd content, the coercivity of 10.4 kOe in Nd_(13.2)Fe_(80.8)B_6 decreases to 7.2 kOe in Nd_(12.2)Fe_(81.8)B_6; meanwhile, in Nd–Fe–B/Tb–Fe–B magnets the coercivity does not decrease when reducing Nd content.In the intergranular phase, the Tb content increases owing to the reducing Nd content of the Nd–Fe–B alloy in the sintered composite magnets.Therefore, the excess Tb in Tb_(17)Fe_(75)B_8 enters the intergranular phase, and more Tb atoms can substitute for Nd at the grain boundary of the Nd–Fe–B phase, leading to a more significant increase in coercivity.The remanence increases with reducing Nd content, and the energy product of 39.1 MGOe with a high coercivity of 21.0 kOe is obtained in Nd_(12.2)Fe_(81.8)B_6/Tb_(17)Fe_(75)B_8 magnets.These investigations show that magnetic properties can be further improved by regulating the element distribution in sintered composite magnets.     

Effect of Sn and Al additions on the microstructure and mechanical properties of amorphous Ti–Cu–Zr–Ni alloys

Amorphous Ti–Cu–Zr–Ni alloys with minor addition of Sn and Al were prepared by melt spinning technique.The effects of Sn and Al additions on the microstructures and mechanical properties of glassy ribbons were investigated.The amorphous state of ribbons was confirmed by x-ray diffraction and transmission electron microscopy,where those ribbons with Sn addition exhibited a fully amorphous state.The characteristic temperature indicates that Ti_(45)Cu_(35)Zr_(10)Ni_5Sn_5 alloy has a stronger glass-forming ability,as proven by differential scanning calorimetry.Ti_(45)Cu_(35)Zr_(10)Ni_5Al_5 alloy showed a better hardness of 9.23 GPa and elastic modulus of 127.15 GPa and good wear resistance.Ti_(45)Cu_(35)Zr_(10)Ni_5Sn_5 alloy displayed a pop-in event related to discrete plasticity according to nanoindentation.When the temperature is below 560 K,Ti_(45)Cu_(35)Zr_(10)Ni_5Sn_5 alloy mainly exhibits elasticity.When the temperature rises between 717 K and 743 K,it shows a significant increase in elasticity but decrease in viscoelasticity after the ribbon experiences the main relaxation at 717 K.When the temperature is above 743 K,the ribbon shows viscoplasticity.     

Vortex domain structures and dc currentdependence of magneto-resistances in magnetic tunnel junctions

Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni_{79}Fe_{21} (25nm)/Ir_{22}Mn_{78} (12nm)/Co_{75}Fe_{25} (4nm)/Al(0.8nm) oxide/Co_{75}Fe_{25} (4nm)/Ni_{79}Fe_{21} (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.     

Magnetic and mechanical properties of Ni–Mn–Ga/Fe–Ga ferromagnetic shape memory composite

A ferromagnetic shape memory composite of Ni–Mn–Ga and Fe–Ga was fabricated by using spark plasma sintering method. The magnetic and mechanical properties of the composite were investigated. Compared to the Ni–Mn–Ga alloy,the threshold field for magnetic-field-induced strain in the composite is clearly reduced owing to the assistance of internal stress generated from Fe–Ga. Meanwhile, the ductility has been significantly improved in the composite. A fracture strain of 26% and a compressive strength of 1600 MPa were achieved.     

Thermal stability and high-temperature shape memory characteristics of Ti–20Zr–10Ta alloy

The microstructure, martensite transformation behavior, thermal stability and shape memory behavior of Ti–20Zr– 10Ta high temperature shape memory alloy were investigated. The Ti–20Zr–10Ta alloy exhibited a reversible transformation with the high martensite transformation temperature of 500oC and good thermal stability. The alloy displayed the elongation of 15% and a maximum recovery stain of 5.5% with 8% pre-strain.     

Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE

AlN films grown on sputter-deposited and annealed AlN buffer layer by high temperature hydride vapor phase epitaxy(HVPE)have been fabricated and structurally characterized.The crystalline quality and surface morphology of as-grown AlN films with various V/III ratios were studied and compared.The XRD results showed that the crystalline quality of the AlN film could be optimized when the growth V/III ratio was 150.At the same time,the full width at half-maximum(FWHM)values of(0002)-and(10ˉ12)-plane were 64 arcsec and 648 arcsec,respectively.As revealed by AFM,the AlN films grown with higher V/III ratios of 150 and 300 exhibited apparent hillock-like surface structure due to the low density of screw threading dislocation(TD).The defects microstructure and strain field around the HVPE-AlN/sputtered-AlN/sapphire interfaces have been investigated by transmission electron microscopy(TEM)technique combined with geometric phase analysis(GPA).It was found that the screw TDs within AlN films intend to turn into loops or half-loops after originating from the AlN/sapphire interface,while the edge ones would bend first and then reacted with others within a region of 400 nm above the interface.Consequently,part of the edge TDs propagated to the surface vertically.The GPA analysis indicated that the voids extending from sapphire to HVPE-AlN layer were beneficial to relax the interfacial strain of the best quality AlN film grown with a V/III ratio of 150.     

Transition of photoconductive and photovoltaic operation modes in amorphous Ga_2O_3-based solar-blind detectors tuned by oxygen vacancies

We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga_2O_3 interface is realized by tuning the conductivity of amorphous Ga_2O_3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga_2O_3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity(PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA,a high detectivity of 9.82×10~(12) cm·Hz~(1/2)·W~(-1), a fast response time of 243.9 μs, and a high ultraviolet C(UVC)-toultraviolet A(UVA) rejection ratio of 103. The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.     

Comparison of blue–green response between transmission-mode GaAsP-and GaAs-based photocathodes grown by molecular beam epitaxy

In order to develop the photodetector for effective blue–green response, the 18-mm-diameter vacuum image tube combined with the transmission-mode Al_(0.7)Ga_(0.3)As_(0.9)P_(0.1)/GaAs_(0.9)P_(0.1) photocathode grown by molecular beam epitaxy is tentatively fabricated. A comparison of photoelectric property, spectral characteristic and performance parameter between the transmission-mode GaAsP-based and blue-extended GaAs-based photocathodes shows that the GaAsP-based photocathode possesses better absorption and higher quantum efficiency in the blue–green waveband, combined with a larger surface electron escape probability. Especially, the quantum efficiency at 532 nm for the GaAsP-based photocathode achieves as high as 59%, nearly twice that for the blue-extended GaAs-based one, which would be more conducive to the underwater range-gated imaging based on laser illumination. Moreover, the simulation results show that the favorable blue–green response can be achieved by optimizing the emission-layer thickness in a range of 0.4 μm–0.6 μm.     

Effect of Au/Ni/4H–SiC Schottky junction thermal stability on performance of alpha particle detection

Au/Ni/n-type 4H–SiC Schottky alpha particle detectors are fabricated and annealed at temperatures between 400℃ and 700℃ to investigate the effects of thermal stability of the Schottky contact on the structural and electrical properties of the detectors. At the annealing temperature of 500?C, the two nickel silicides(i.e., Ni_(31)Si_(12) and Ni_2Si) are formed at the interface and result in the formation of an inhomogeneous Schottky barrier. By increasing the annealing temperature,the Ni_(31)Si_(12) transforms into the more stable Ni_2Si. The structural evolution of the Schottky contact directly affects the electrical properties and alpha particle energy resolutions of the detectors. A better energy resolution of 2.60% is obtained for 5.48-MeV alpha particles with the detector after being annealed at 600℃. As a result, the Au/Ni/n-type 4 H–SiC Schottky detector shows a good performance after thermal treatment at temperatures up to 700℃.     

The interface density dependence of the electrical properties of 0.9Pb(Sc_(0.5)Ta_(0.5))O_3–0.1PbTiO_3/0.55Pb(Sc_(0.5)Ta_(0.5))O_3–0.45PbTiO_3 multilayer thin films

The 0.9Pb(Sc0.5Ta0.5)O3–0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3–0.45 PbTiO3 multilayer thin films((PSTT10/45)n, n = 1–6, 10) are deposited on SiO2/Si(100) substrates by radio frequency magnetron sputtering technique with La Ni O3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 μm-1, the film shows an optimized dielectric property(high dielectric constant, εr = 765, lowest dielectric loss, tan δ = 0.041, at 1 k Hz) and ferroelectric property(highest remnant polarization,2Pr = 36.9 μC/cm2, low coercive field, 2Ec = 71.9 k V/cm). The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.     

Control of symmetric properties of metamorphic In_(0.27)Ga_(0.73)As layers by substrate misorientation

Asymmetry in dislocation density and strain relaxation has a significant impact on device performance since it leads to anisotropic electron transport in metamorphic materials. So it is preferred to obtain metamorphic materials with symmetric properties. In this paper, we grew metamorphic In_(0.27)Ga_(0.73) As epilayers with symmetric low threading dislocation density and symmetric strain relaxation in two (110) directions using In Al Ga As buffer layers on 7°misoriented Ga As(001)substrates. To understand the control mechanism of symmetric properties of In_(0.27)Ga_(0.73) As layers by the substrate miscut angles, In_(0.27)Ga_(0.73) As grown on 2°and 15°misoriented substrates were also characterized as reference by atomic force microscopy, transmission electron microscopy, and high resolution triple axis x-ray diffraction. The phase separation and interaction of 60°misfit dislocations were found to be the reasons for asymmetry properties of In_(0.27)Ga_90.73 As grown on 2and 15°substrates, respectively. Photoluminescence results proved that the In_(0.27)Ga_(0.73) As with symmetric properties has better optical properties than the In_(0.27)Ga_(0.73) As with asymmetric properties at room temperature. These results imply that high quality metamorphic In_(0.27)Ga_(0.73) As can be achieved with controllable isotropic electron transport property.     

Enhanced structural and magnetic properties of microwave sintered Li–Ni–Co ferrites prepared by sol–gel method

The properties of lithium ferrites are very sensitive to chemical composition, synthesis method, and sintering techniques. Li–Ni–Co ferrites with compositional formula Li_(0.45-0.5x)Ni_(0.1)Co_xFe_(2.45-0.5x)O_4, where 0.00 ≤ x ≤ 0.1 in steps of 0.02 were prepared by chemical sol–gel method and sintered by microwave sintering technique. The x-ray diffraction patterns confirmed the formation of single phase with spinel structure in all the samples. The structural parameter viz.lattice constant, crystallite size, and x-ray density for these samples were studied and compared with those measured from samples of similar composition prepared by the sol–gel method and sintered by conventional sintering technique. Enhancement in the magnetic properties like Curie temperature, hysteresis parameters was observed by employing sol–gel synthesis combined with microwave sintering. The results obtained and mechanisms involved are discussed in the paper.     

Mid-infrared luminescence of Dy~(3+)-doped Ga_2S_3–Sb_2S_3–CsI chalcohalide glasses

The mid-infrared(MIR) luminescent properties of Dy~(3+) ions in a new chalcohalide glass host, Ga_2S_3–Sb_2S_3–CsI,are investigated; and the suitability of the doped glass for MIR fiber lasers is evaluated. The Dy~(3+)-doped chalcohalide glasses exhibit good thermal stability and intense MIR emissions around 2.96 μm and 4.41 μm. These emissions show quantum efficiencies(η) as high as ~60%, and have relatively large stimulated emission cross sections(σem). The low phonon energy(~307 cm~(-1)) of the host glass accounts for the intense MIR emissions, as well as the high η. These favorable thermal and emission properties make the Dy~(3+)-doped Ga_2S_3–Sb_2S_3–CsI glasses promising materials for MIR fiber amplifiers or lasers.     

Effect of thermo-mechanical process on structure and high temperature shape memory properties of Ti–15Ta–15Zr alloy

The effect of thermo-mechanical treatment on microstructure evolution, martensite transformation, and shape memory behavior of Ti–15Ta–15Zr high temperature shape memory alloy were investigated. Different martensite morphologies were found with different annealing temperatures. The Ti–15Ta–15Zr alloy exhibits almost perfect shape memory recovery strain of 6% after annealing at 973 K for 0.5 h.     

Structural,magnetic, and dielectric properties of Ni–Zn ferrite and Bi_2O_3 nanocomposites prepared by the sol-gel method

Ni–Zn ferrite and Bi_2O_3 composites were developed by the sol-gel method. The structural, magnetic, and dielectric properties were studied for all the prepared samples. X-ray diffraction(XRD) was performed to study the crystal structure.The results of field emission scanning electron microscopy(FE-SEM) showed that the addition of Bi_2O_3 can increase the grain size of the Ni–Zn ferrite. Magnetic properties were analyzed by a hysteresis loop test and it was found that the saturation magnetization and coercivity decreased with the increase of Bi_2O_3 ratio. In addition, the dielectric properties of the Ni–Zn ferrite were also improved with the addition of Bi_2O_3.     

STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2 ψ METHOD

The boron nitride (BN) films containing cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) were prepared by radio frequency a ssisted thermal filament chemical vapor deposition. The stress and strain in BN films were investigated by X-ray diffraction analysis using the sin² ψ method. The results showed that both c-BN and h-BN in the same film have similar values of elastic strain, however, the compressive stress in c-BN is much greater than that in h-BN for the same film. Both stress and strain gradually decre ased with the increase of substrate temperature (T_s). The effective stress in the films calculated by the effective stress model increased with the increase of T_s. Furthermore, the dependence of effective stress in the films on T_s was also investigated.     

Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

The optical properties of hexagonal boron nitride (h-BN) thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy, UV--visible transmittance and reflection spectra. h-BN thin films with a wide optical band gap E_g (5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency (RF) bias magnetron sputtering and post-deposition annealing at 970~K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However, high temperature still has a significant effect on the optical absorption properties, refractive index n, and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of E_g probably result from stress relaxation in the film under high temperatures. In addition, it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.     

Effect of Anneal on the Release Behaviour of LY12-Al Alloy

The sound velocities along the release path of annealed LY12-Al are measured by using a velocity interferometer system for any reflector （VISAR） technique. The shear modulus and yield strength are then obtained. Comparison of the experimental results with those of unannealed LY12-Al shows that anneal has little influence on sound velocities and shear modulus though it weakens the yield strength considerably, and changes the dependence of yield strength upon shock stress. The ratio of shear modulus to yield strength of unannealed LY12-Al increases with shock stress monotonically while that of annealed LY12-Al exhibits much more complicated behaviour.