掺镧PbWO4闪烁晶体的缺陷研究

利用正电子湮没寿命谱(PAT)和X射线电子能谱(XPS)研究了掺镧所引起的PbWO₄ 晶体缺陷的变化.结果表明：掺镧后,PbWO₄晶体中的正电子捕获中心铅空位(V< sub>Pb)浓度增加,并进一步诱导低价氧浓度的增加.讨论了掺La的作用机制,认为掺 La将抑制晶体中的氧空位,增加铅空位浓度. 关键词： 掺镧钨酸铅晶体 正电子湮没寿命谱 X射线电子能谱 缺陷     

+3价离子掺杂钨酸铅晶体发光性能和微观缺陷的研究

通过透射光谱、x射线激发发射光谱（XSL）的测试，研究了Bridgman法生长的几种不同+3价离子掺杂钨酸铅晶体的发光性能，并利用正电子湮没寿命谱（PAT）和x光电子能谱（XPS）的实验手段，对不同钨酸铅晶体的微观缺陷进行研究.实验表明，不同的+3价离子掺杂，对钨酸铅晶体发光性能的改善不同，并使得晶体中正电子俘获中心和低价氧的浓度发生不同变化.其中掺镧晶体的正电子俘获中心和低价氧浓度均上升，而掺钇和掺铋晶体的正电子俘获中心和低价氧浓度均下降，掺锑晶体则出现了正电子俘获中心浓度上升、低价氧浓度下降的情况.提 关键词： 钨酸铅晶体 +3价离子掺杂 正电子湮没寿命谱 x光电子能谱     

Photoluminescence in GdVO4:Bi3+, Eu3+ red phosphor

The doubly doped (Bi³⁺ and Eu³⁺) GdVO₄ powder is synthesized by hydrolyzed colloid reaction (HCR) technique and formation of material is confirmed by XRD measurement. Surface morphology has been studied by SEM measurement and the result shows uniform surface morphology. The average particle size observed by SEM is about 1 7m. The Fritsch particle sizer is used to study the particle size distribution. It distributes from O.15 to 3.57 7m. The small particle size (less than 5 7m) and the narrow particle size distribution, are the necessary requirements of good phosphor material. Photoluminescence result shows a narrow emission line of Eu³⁺ ion (4 nm FWHM) at 618 nm. The Eu³⁺ emission intensity is enhanced by a factor of five with the addition of small amount of Bi³⁺. The emission bands of VO₄^3- and Bi³⁺ partially overlap with the excitation band of Eu³⁺. The process of energy transfer from Bi³⁺ to Eu³⁺ is discussed here. The energy transfer probability is strongly dependent upon the Bi³⁺ and Eu³⁺ concentrations, with a maximum for 0.2 mol % of Bi³⁺ and 3 mol % of Eu³⁺. It drastically decreases for higher concentrations. For photoluminescent applications, the quantum efficiency (QE) of a phosphor material is an important parameter. The QE of GdVO₄:Bi,Eu(0.2,3) is 76%. The GdVO₄:Bi,Eu(0.2,3) material is proposed as an efficient photoluminescent phosphor.     

VUV/UV/X-Ray Excited Luminescent Properties of Eu^3＋ and Pr^3＋ Doped BiSbO4

Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3＋ and Pr^3＋ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3＋ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3＋ ions occupied Bi^3＋ sites, and there could be an energy transfer from Bi^3＋ ions to RE^3＋ ions.     

First Study of Weak (EC+β+) Decay Branch for the Neutron-Deficient Isotoep 209Fr

²⁰⁹Fr has been produced by irradiation of ¹⁹⁷Au with ¹⁶O from SFC accelarator uia the fusion-evaporation 4n channel.The(EC+β⁺)decay of ²⁰⁹Fr has been studied by a He-jet tape transport system.The decay scheme is proposed for the first time based on γ-t,X-γ-t,γ-γ-t coincidece and γ-γ delay coincidence measurements,which takes account of 20 observed γ ray.Five members of low-lying states in ²⁰⁹Rn can be explained by the multi-plet [(²¹⁰Rn2⁺)(νf_5/2)^－1].The branching ratio for(EC+β⁺) decay of ²⁰⁹Fr has been estimated experimentaly to be(3.0±1.5)%.     

Concentration and Temperature Dependences of YBO3：Bi^3＋ Luminescence under Vacuum Ultraviolet Excitation

Bi^3＋ doped YB03 phosphors are prepared by solid state reaction and their luminescent properties are investi- gated by using synchrotron radiation instrument, Concentration and temperature dependences of YBO3：Bi3＋ luminescence under VUV/UV excitation is observed, The emission and excitation spectra are assigned, and the mechanism for these phenomena is explored, which result from the energy transfer between Bi^3＋ ions occupying different sites in YB03 crystal lattice.     

硅酸锶掺Er3+的高压合成及发光特性

 首次采用高压高温方法合成了Sr₂SiO₄:Er³⁺Bi³⁺和SrSiO₃:Er³⁺Bi³⁺发光材料，研究了合成压力、合成温度对发光特性的影响。与常压合成产物相比较，发光谱发生了红移；谱线半宽度显著增大；发光强度和量子发光效率下降。X射线衍射分析得出，SrSiO₃:Er³⁺Bi³⁺发生了结构相变，Sr₂SiO₄:Er³⁺Bi³⁺结构未变但晶格参数发生了变化，且主衍射峰强度发生了反转。分析表明，发光特性的变化是压致晶场、库仑及自旋-轨道相互作用的变化引起的。     

Quantum cutting downconversion by cooperative energy transfer from Bi3+ to Yb3+ in Y2O3 phosphor

Bi~(3+) and Yb~(3+) codoped cubic Y2O3 phosphors are prepared by pechini sol-gel method.Strong near-infrared (NIR) emission around 980 nm from Yb~(3+)(2F5/2 → 2F7/2) is observed under ultraviolet light excitation.A broad excitation band ranging from 320 to 360 nm,owing to the 6s 2 →6s6p transition of Bi~(3+) ions,is recorded when the Yb~(3+) emission is monitored,which suggests a very efficient energy transfer from Bi~(3+) ions to Yb~(3+) ions.The Yb~(3+) concentration dependences of both the Bi~(3+) and the Yb~(3+) emissions are investigated.The decay curve of Bi ~(3+) emission under the excitation of 355 nm pulse laser is used to explore the Bi~(3+) →Yb~(3+) energy transfer process.Cooperative energy transfer (CET) is discussed as a possible mechanism for the near-infrared emission.     

Influence of Gamma-Ray Irradiation on Absorption and Fluorescent Spectra of Nd：YAG and Yb：YAG Laser Crystals

We investigate the influence of gamma-ray irradiation on the absorption and fluorescent spectra of Nd^3＋：Y3A15 O12 （Nd： YAG） and Yb^3＋ ： Y3A15 O12 （Yb： YAG） crystals grown by the Czochralski method. Two additional absorption （AA） bands induced by gamma-ray irradiation appear at 255nm and 340nm. The former is contributed due to Fe^3＋ impurity, the latter is due to Fe^2＋ ions and F-type colour centres. The intensity of the excitation and emission spectra as well as the fluorescent lifetime of Nd：YAG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, the same dose irradiation does not impair the fluorescent properties of Yb：YAG crystal. These results indicate that Yb： YA G crystal possesses the advantage over Nd： YA G crystal that has better reliability for applications in harsh radiant environment.     

Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.     

Systematic Analysis of E(5) Critical-Point Nuclei in A～130 Region with Relativistic Mean Field Theory

The shape phase transition between spherical U(5) and γ-unstable O(6) nuclei is investigated systemically for the nuclei in the A～130 region by the constrained relativistic mean field theory. By examining potential energy surfaces and neutron Fermi energies, we suggest that ¹³⁶Ba and ^132,134Xe are possible nuclei with E(5) symmetry, which is favored by the observed ratio R_4/2=(E+41－E+01)/(E+21－E+01). While the RMF predicted E(5) symmetry or ^128,130,132Te cannot be supported by the observed ratio R_4/2. Whether these nuclei are critical-point nuclei should further be examined in experiments.     

Synthesis of C26 Crystallite Polyethylene by C2+ Ion Bombardment

A new form solid Carbon has been synthesized consisting of a hexagonal close packing of a26 molecules under energetic C₂₆ ion 2.4 MeV bombardment of ultra high molecular weight polyethylene. The beam current was about 150 mA and the total dose was 1×10¹⁶ ions cm^－2. The residual gas pressure in the irradiation chamber was 1.3×10^－4Pa during bombardment High-resolu-tion transmission electron microscopy, electron diffraction, and time-of-flight mass spectroscopy studies of the molecular packing confirm that the C₂₆ molecules have the Caged fullerene structure.     

Nb2O5掺杂对提高钨酸铅晶体发光性能的微观研究

通过透射谱、X射线激发发射谱(XSL)的测试，研究了布里奇曼(Bridgman)法生长的掺铌钨酸铅晶体的发光性能，并利用正电子湮没寿命谱(PAT)和X射线光电子能谱(XPS)的实验手段，对其微观缺陷进行了深入研究。结果表明，铌掺杂能够有效地改善钨酸铅晶体的350nm吸收带，提高钨酸铅晶体的发光快成分比例，并使得晶体中的正电子捕获中心浓度上升，低价氧浓度上升。提出掺铌钨酸铅晶体中Nb^5 将占据W^6 格位并使得晶体内部分(WO4)^2-根团成为(NbO3 Vo)^-，由此可改善钨酸铅的发光性能。     

Level Scheme of High-Spin States in 145Tb

High-spin states of ¹⁴³Tb have been studied via the ¹¹⁸Sn(³²S,1p4n)¹⁴⁵Tb reaction by means of in-beam γ-ray spectroscopy. Measurements of γ-ray excitation functions and γ-γ-t coincidences were performed with 12 BGO(AC)HPGe detectors. A level scheme for ¹⁴⁵Tb including 41 γ-rays which come from the deexcitations of the 24 levels, has been established for the first time based on an analysis of the γ-ray excitation functions, γ-γ coincidence relationships, intensity balances and cross-over transitions. The spins for most of the levels in the scheme are assigned according to the results of the measured γ-ray anisotropies. Considering the structure similarity between ¹⁴³Eu and ¹⁴⁵Tb, the low-lying levels in 145Tb are interpreted by coupling a h_9/2 proton to the excited states in ¹⁴⁴Gd core.     

HELICITY FORMALISM OF THE ANGULAR DISTRIBUTION FOR THE J/ψ HADRONIC DECAY PROCESS

In this paper we give the helicity formalism of the angular distribution for processes e⁺e^－→J/ψ→V+X,V→P₁P₂ and e⁺e^－→J/ψ→V+X,X→P₄P₅.It provides the theoretical formula for e⁺e^－ experimental data analysis.     

PRODUCTION OF A 3－+ GLUEBALL IN J/ψ RADIATIVE DECAY

The multiple angular-correlation function for the sequential decays J/ψ→γ+G(3^－+), G(3^－+)→M₁M₂, where G is a J^pc=3^－+ state and M₁ and M₂ are spinless mesons, is deduced. A 3^－+ glueball state is discussed and the ratios of the helicity amplitudes of J/ψ→γ+G(3^－+) are calculated. One ratio is independent of the glueball's mass and very small.     

Luminescence Spectra of YGG：RE^3＋, Bi^3＋ （RE = Eu and Tb） and Energy Transfer from Bi^3＋ to RE^3＋

We investigate the luminescence properties of Bi^3＋ and RE^3＋ （RE = Tb or Eu） in a Y3Ga5O12 （YGG） host system. The additional doping of Bi^3＋ can enhance the luminescence of Th^3＋ or Eu^3＋ in this host. Energy transfer from Bi^3＋ to Tb^3＋ and Eu^3＋ is observed and the mechanism of energy transfer is investigated. Mechanism of energy transfer can be explained as electric multipole interaction since the Bi^3＋ emission band and Tb^3＋ or Eu^3＋ excitation band overlaps and the Bi^3＋ emission intensity decreases while the intensity of Tb^3＋ or Eu^3＋ increases with the increase of Tb^3＋ or Eu^3＋ concentration. Therefore, Bi^3＋ ion is a kind of efficient sensitizer to the Tb^3＋ and Eu^3＋ activators in the Y3Ga5O12 host.     

Temperature Dependence of the Fluorescence Emission Intensity of Eu/TiO2 Nanocrystals

The samples of europium ions doped titanium dioxide （Eu^3＋/TiO2） nanocrystals are synthesized by a modified sol-gel method with hydrothermal treatment. The x-ray diffraction and scanning electron microscopy are used to characterize the sample. The temperature-dependent fluorescence emission effect of Eu^3＋-doped samples is investigated. It is found that under the excitation of 514.5nm light, the emission intensity of Eu^3＋ reaches a maximum value at 450K among various Eu^3＋ dopant concentrations in Eu^3＋ /TiO2 nanocrystals. The variation of the emission intensity may be attributed to the photon-assist absorption and the temperature-quenching effect.     

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.     

掺Bi钨酸镉单晶体发光特性的研究

用坩埚下降法(Bridgman)生长出了Bi离子掺杂的CdWO₄单晶.测定了晶体不同部位的吸收光谱、发射光谱和X射线电子能谱(XPS).Bi离子的掺入引起CdWO₄晶体的吸收边从345 nm红移到399 nm.在311 nm, 373 nm,808 nm和980 nm光的激发下,分别观测到中心波长为470 nm,528 nm,1078 nm和较弱的1504 nm四个不同发射带.Bi:CdWO₄单晶的XPS谱分别与Bi₂ 关键词： Bi离子 荧光光谱 X射线电子能谱 4单晶')" href="#">CdWO₄单晶