Ge2Sb2Te5的化学机械抛光研究进展

相变存储器由于具有非易失性、高速度、低功耗等优点被认为最有可能成为下一代存储器的主流产品,Ge2Sb2Te5(GST)作为一种传统相变材料已经被广泛应用在相变存储器中,而GST的化学机械抛光作为相变存储器生产的关键工艺目前已被采用.本工作综述了有关GST的化学机械抛光技术研究进展,讨论了GST化学机械抛光过程的影响因素,如下压力、转速、抛光垫、磨料、氧化剂、表面活性剂等,并对目前GST的化学机械抛光机理进行了归纳,进一步展望了GST的化学机械抛光技术的发展前景.     

Luminescence Spectra of YGG：RE^3＋, Bi^3＋ （RE = Eu and Tb） and Energy Transfer from Bi^3＋ to RE^3＋

We investigate the luminescence properties of Bi^3＋ and RE^3＋ （RE = Tb or Eu） in a Y3Ga5O12 （YGG） host system. The additional doping of Bi^3＋ can enhance the luminescence of Th^3＋ or Eu^3＋ in this host. Energy transfer from Bi^3＋ to Tb^3＋ and Eu^3＋ is observed and the mechanism of energy transfer is investigated. Mechanism of energy transfer can be explained as electric multipole interaction since the Bi^3＋ emission band and Tb^3＋ or Eu^3＋ excitation band overlaps and the Bi^3＋ emission intensity decreases while the intensity of Tb^3＋ or Eu^3＋ increases with the increase of Tb^3＋ or Eu^3＋ concentration. Therefore, Bi^3＋ ion is a kind of efficient sensitizer to the Tb^3＋ and Eu^3＋ activators in the Y3Ga5O12 host.