+3价离子掺杂钨酸铅晶体发光性能和微观缺陷的研究

通过透射光谱、x射线激发发射光谱（XSL）的测试，研究了Bridgman法生长的几种不同+3价离子掺杂钨酸铅晶体的发光性能，并利用正电子湮没寿命谱（PAT）和x光电子能谱（XPS）的实验手段，对不同钨酸铅晶体的微观缺陷进行研究.实验表明，不同的+3价离子掺杂，对钨酸铅晶体发光性能的改善不同，并使得晶体中正电子俘获中心和低价氧的浓度发生不同变化.其中掺镧晶体的正电子俘获中心和低价氧浓度均上升，而掺钇和掺铋晶体的正电子俘获中心和低价氧浓度均下降，掺锑晶体则出现了正电子俘获中心浓度上升、低价氧浓度下降的情况.提 关键词： 钨酸铅晶体 +3价离子掺杂 正电子湮没寿命谱 x光电子能谱

The scintillation characteristics and point defects of PbWO4 crystal by doping with trivalent ions

The influence of doping with different trivalent ions (La³⁺，Y³⁺，Bi³⁺，Sb³⁺)on the properties of lead tungstate crystals (PWO) has been investigated. Transmission, emission, positron annihilation lifetime and x-ray photoelectron spectra of different trivalent ions doped and undoped PWO are reported. The scintillation characteristics of the La-doped、Y-doped、Bi-doped、Sb-doped PWO crystals are discussed by comparing with the result of undoped PWO crystal. All the trivalent ions but Bi³⁺ doping gave a significant improvement in luminescence property of PWO obviously. The defects in PWO crystals caused by trivalent-ion dopants have been studied by means of positron annihilation lifetime and x-ray photoelectron spectra. The results can be stated as follows: La dopant can increase the concentrations of both lead vacancy (V_Pb) and the low-valent oxygen; Y and Bi dopant can decrease the concentrations of both V_Pb and low-valent oxygen; and Sb dopant can increase the concentration of V_Pb but decrease the concentration of low-valent oxygen. We consider that the La ions will replace the lattice Pb²⁺, the Y and Bi ions will occupy the lead vacancy; and the Sb ions have two valence states (+3 and +5), which will replace the lattice Pb²⁺ and W⁶⁺ ions, respectively.