高压合成的硼酸锶掺Eu2+离子发光特性的研究

 本文首次采用高压方法合成了Sr₃B₂O₆:Eu²⁺、Sr₂B₂O₅:Eu²⁺、SrB₄O₇:Eu²⁺一系列硼酸盐，研究了它们和SrB₂O₄:Eu²⁺的常压与高压合成产物的发光光谱、强度及效率的变化，以及发光与其结构的关系。由于硼酸盐在高压处理后，结构发生变化，因而光谱及发光强度均有所改变。尤其对SrB₂O₄:Eu²⁺，在适当的合成压力条件及一定的激光条件下，其量子发光效率比常压提高80倍以上。     

高温高压合成的SrSiO3:Eu3+Bi3+的结构及其对发光特性的影响

 本文首次报道在3.15 GPa、1 200 ℃高温高压条件下合成出了SrSiO₃:Eu³⁺Bi³⁺发光材料，并与常压合成产物相比较，研究了高温高压合成产物的结构以及合成压力、温度对发光特性的影响。结果表明，高压合成产物SrSiO₃:Eu³⁺Bi³⁺的结构为膺正交（单斜）结构，而常压合成的为六角结构，高压使发光强度下降，量子发光效率下降了88%，谱线红移达756 cm^-1，半值宽度也显著增加，发光性能的改变是由于压致结构的变化引起的。     

Eu3+离子掺杂钛酸盐纳米管的直接水热合成与发光性能

 采用纳米管制备和离子掺杂同步进行的直接水热合成方法，合成了纯钛酸盐纳米管（TNT）和Eu³⁺离子掺杂的纳米管（TNT-Eu）；并利用X射线衍射（XRD）、透射电子显微镜（TEM）、光致发光谱仪研究了纳米管的形貌特征、物相组成、热稳定性和发光性能。结果显示：这种方法简便易行、稳定性好、产率高。钛酸盐纳米管物相可近似表示为(H,Na)₂Ti₃O₇或(H,Na)₂(Ti,Eu)₃O₇。高温处理对钛酸盐纳米管的结构产生很大的影响，450 ℃下纳米管的层状结构被破坏，晶体结构转化为锐钛矿型的TiO₂。TNT-Eu样品的发光性能较强，出现的393.5 nm、593 nm、614 nm的谱带归属于⁵D₀-⁷F₁和⁵D₀-⁷F₂电子的跃迁。     

掺铒碲钨酸盐玻璃光谱性质的研究

合成了不同浓度Er³⁺掺杂的TeO₂-WO₃-Li₂O体系玻璃（TW glasses）,详细研究了掺杂浓度对这种碲钨酸盐玻璃光学特性的影响。计算了Judd Ofelt(J-O)强度参数,研究了掺杂浓度对15 μm发射带宽的影响,及不同掺杂浓度下Er³⁺的⁴I_11/2-⁴I_13/2和⁴I_13/2-⁴I_15/2无辐射跃迁过程。实验得到了在TW 玻璃中Er³⁺的⁴I_13/2-⁴I_15/2跃迁的浓度猝灭速率约为跃迁的浓度猝灭速率约为0.8×10^-18cm³·s^-1,这对寻求Er³⁺在碲钨酸盐玻璃中的合理掺杂浓度有一定的参考意义,这对寻求Er³⁺在碲钨酸盐玻璃中的合理掺杂浓度有一定的参考意义。实验发现Er³⁺的⁴I_11/2-⁴I_13/2无辐射弛豫速率在这种玻璃体系中约是不含WO₃的碲酸盐玻璃中的2倍,说明含WO₃的掺铒碲钨酸盐玻璃更有利于在980 nm激光泵浦下实现15 μm光放大。     

LaOBr:Tb3+，Dy3+的发光特性及高压研究

 采用高温常压方法合成了稀土发光材料LaOBr:Tb³⁺，Dy³⁺，采用高温高压方法对材料进行了处理，研究了高温高压处理前后样品发光特性的变化，并进行了发光衰减测量。结果表明，Dy³⁺的掺杂可以将Tb³⁺的⁵D₃能级的激发能有效地驰豫到⁵D₄能级，从而使⁵D₄~⁷F_J（J＝0, 1,…,6）的发射，尤其是⁵D₄~⁷F₅的发射明显增强，使得样品的发光亮度大大提高。Dy³⁺，Tb³⁺间存在交叉驰豫共振能量传递。高压处理过程引入的杂质、材料氧化及压致晶场变化都对材料的发光特性产生影响。     

Sol-gel法制备Er3+-Yb3+共掺杂Al2O3粉末光致发光特性

采用异丙醇铝[Al(OC₃H₇)₃]为前驱体,溶胶-凝胶(Sol-gel)法制备Er³⁺-Yb³⁺共掺杂Al₂O₃粉末.实验结果表明:900 ℃烧结的粉末为固溶Er³⁺、Yb³⁺的γ-(Al,Er,Yb)₂O₃相和少量θ-(Al,Er,Yb)₂O₃相的混合物.Er³⁺-Yb³⁺共掺杂Al₂O₃粉末具有中心波长为1.533 μm的光致发光(PL)特性.1 mol % Er³⁺和1 mol% Yb³⁺共掺杂的Al₂O₃粉末的PL强度较1 mol % Er³⁺掺杂提高2倍,半峰宽从53 nm增加到63 nm.随泵浦功率的提高,PL强度呈线性增加后渐呈饱和趋势.     

金属性氧化物LaCuO3的高氧压合成及Cu3+态的XPS研究

 本文在成功地用超高氧压（~6.5 GPa）及高温（~980 ℃）合成和结构测定的基础上，首次对金属性化合物中LaCuO₃中的Cu³⁺离子给予标定，并研究了它与绝缘体中Cu³⁺的区别。本论文中合成的LaCuO₃为金属性化合物，电导率测量表明在大于13 K无超导电性迹象。XPS测量给出了LaCuO₃中Cu2p_3/2内层电子结合能相对于La₂CuO₄或CuO中的Cu²⁺向高结合能方向移动了约2.6 eV，这一量值远大于NaCuO₂（绝缘体）中的Cu2p_3/2相对于CuO中的Cu²⁺移动的值，约为1.3 eV。Auger谱测量表明，LaCuO₃的修正了的Auger参数与CuO的基本相同，但L₃VV的Auger电子动能相对CuO移动了2.8 eV。这些位移说明在金属性化合物LaCuO₃中，Cu³⁺处在八面体位置上，它与近邻的Cu³⁺连成单个Cu—O—Cu桥，因此可作为对比p型高T_c含铜氧化物的XPS谱的标准。     

高温高压下SrB4O7：Eu2+玻璃的晶化

 利用X射线衍射和Eu²⁺发射光谱方法研究了非晶玻璃SrB₄O₇在高温高压下的晶化。结果表明：在5.0 GPa压力下，200 ℃仍为玻璃态，只有几个强度极低的小峰，表明有晶化的迹象；600 ℃时已基本晶化，但为SrB₄O₇正交相与SrB₄O₇高压立方相二相共存；当温度提高到1 000 ℃时，晶化成了近单相的与常压SrB₄O₇粉末晶体相同的正交结构。伴随晶化度的加强，Eu²⁺发射强度增强，与Ｘ射线衍射结果相一致。     

B离子对SiO2基质凝胶中Eu3+特征光谱的加强作用

使用正硅酸乙酯、硼酸和硝酸铝为前驱体，硝酸铕为掺杂剂，以溶胶-凝胶法制备了Eu单掺和Eu、B共掺的SiO2干凝胶，并成功地在钠钙玻璃上制备了光洁度很好的掺杂SiO₂多层薄膜.利用荧光光谱、红外光谱（IR）、X射线衍射（XRD）等技术研究了B离子、退火温度对样品发光性能的影响.荧光光谱显示发光体能产生很强的红色发光，经500℃以上退火处理，产生6条谱带，分别归属于Eu³⁺的⁵D₀→⁷F_J（J=0, 1, 2, 3, 4）的电子跃迁, ⁵D₀→⁷F₁的跃迁分裂为两个峰.实验结果表明，B离子的加入，由于在材料中形成了Si-O-B键，使Eu³⁺的配位环境的对称性降低，加强了Eu³⁺的红光发射.退火处理改变了材料的网络结构，降低了水和羟基的含量有助于提高发光强度，但退火温度太高（850℃），发生了荧光猝灭效应，源于稀土离子发生位置迁移形成的团簇.XRD测试结果显示材料是非晶态的.     

Co2+:ZnAl2O4晶体电子光谱及其2E态双重谱线结构的Jahn-Teller效应研究

在中间场耦合图象中,利用Racak不可约张量算符法和Wigner－Eckart定理,建立了3d⁷(C_3v)电子组态的完全能量矩阵;利用该矩阵研究了Co²⁺:ZnAl₂O₄晶体的电子光谱,理论与观测十分吻合．首次定量地解释了2E态的双重谱线结构,并从理论上预言了⁴A₂基态2.93cm^-1的零场分裂(ZFS)．研究结果定量地表明,Jahn－Teller效应所致Co²⁺:ZnAl₂O₄晶体Co²⁺中心局域结构的畸变假设是合理的．     

硅酸锶掺Eu^3^＋的高压合成及发光特性

首次采用高压高温方法合成了Sr_2SiO_4:Eu~(3+)Bi~(3+)和SrSiO_3:Eu~(3+)Bi~(3+)发光材料,研究了合成压力、合成温度对发光特性的影响。与常压合成产物相比较,发光谱线发生了红移;谱线半宽度显著增大;发光强度和量子发光效率下降。X射线衍射分析得出,SrSiO_3:Eu~(3+)Bi~(3+)发生了结构相变,Sr_2SiO_4:Eu~(3+)Bi~(3+)结构未变但晶格参数发生了变化,且主衍射峰强度发生了反转。分析表明,发光特性的变化是压致晶场、库仑及自旋～轨道相互作用的变化引起的。     

Upconversion properties of Er^3＋/Yb^3＋ co-doped TeO2-Nb2O5-Li2O glasses

The Er^3＋/Yb^3＋ co-doped TeO2-Nb2O5-Li2O glass is prepared by conventional melting method, and its upconversion spectra are measured. The intense green upconversion luminescence upon excitation with a 976 nm laser diode is observed with the naked eyes. The dependence of luminescence intensity on the ratio of Yb^3＋/Er^3＋ is discussed in detail, and the relationship between the ratio of green luminescence intensity to red luminescence intensity and the ratio of Yb^3＋/Er^3＋ is also studied, The luminescence intensity increases with the ratio of Yb^3＋/Er^3＋ increasing. The ratio of Yb^3＋/Er^3＋ plays a more important role than the concentration of Er^3＋ in determining the upconversion luminescence intensity. The ratio of green luminescence intensity to red luminescence intensity reaches a maximum when ratio of Yb^3＋/Er^3＋ is 3. Thus the glass could be one of the potential candidates for LD pumping solid-state lasers.     

Upconverted VUV luminescence of Nd and Er doped into LiYF4 crystals under XeF-laser excitation

The upconverted VUV (185 nm) and UV (230 and 260 nm) luminescence due to 5d-4f radiative transitions in Nd³⁺ ions doped into a LiYF₄ crystal has been obtained under excitation by 351/353 nm radiation from a XeF excimer laser. The maximum upconversion efficiency, defined as the ratio of intensity for 5d-4f luminescence to overall intensity for 5d-4f and 4f-4f luminescence from the ⁴D_3/2 Nd³⁺ level, has been estimated to be about 70% under optimal focusing conditions for XeF laser radiation. A redistribution of intensity between three main components of 5d-4f Nd³⁺ luminescence is observed under changing the excitation power density, which favors the most long-wavelength band (260 nm) at higher excitation density level. The effect is interpreted as being due to excited state absorption of radiation emitted. The upconverted VUV and UV luminescence from the high-lying ²F(2)_7/2 4f level of Er³⁺ doped into a LiYF₄ crystal has also been obtained under XeF-laser excitation the most intense line being at 280 nm from the spin-allowed transition to the ²H(2)_11/2 4f level of Er³⁺, but the efficiency of upconversion for Er³⁺ emission is low, less than 5%.     

共沉淀法制备Y2SiO5∶Er3+ ,Yb3+ ,Tm3+及其上转换发光性能研究

采用化学共沉淀法制备了系列Y_1.98-2xYb_2x Er_0.02SiO₅(0.00≤x≤0.15)以及Y_1.736Yb_0.24Er_0.02Tm_0.004SiO₅上转换发光材料,比较了室温下Y_1.98-2xYb_2x Er_0.02 SiO₅ (x=0.00,0.08)样品在400—1600 nm范围内的吸收光谱,测量了所有样品在976 nm OPO激光器激发下的上转换发射光谱,以及Er³⁺离子⁴S_3/2(⁴F_9/2)→⁴I_15/2,Tm³⁺离子¹G₄→³H₆荧光衰减曲线和不同激发功率下的上转换蓝光发射强度,从而分析讨论了Er³⁺,Tm³⁺在Y₂SiO₅中的上转换发光机理.研究结果表明:在1250 ℃相对较低的温度下合成了X2型单斜晶系Y₂SiO₅ ∶Ln³⁺(Ln³⁺=Er³⁺,Yb³⁺,Tm³⁺),Yb³⁺的敏化显著增强了样品在976 nm附近的吸收能力,并大幅度加宽了该处的吸收带.分析上转换发射光谱发现:上转换绿光和红光强度都随着Yb³⁺浓度的增加先增强后减弱,但红光的猝灭浓度较高,归因于Er³⁺→Yb³⁺反向能量传递ETU4和Yb³⁺→Er³⁺正向能量传递ETU3过程的发生;上转换蓝光发射是三光子吸收过程,是通过Yb³⁺,Tm³⁺之间三次声子辅助的能量转移方式实现的. 关键词： 上转换 共沉淀 2SiO₅∶Er³⁺')" href="#">Y₂SiO₅∶Er³⁺ 3+')" href="#">Yb³⁺ 3+')" href="#">Tm³⁺     

高温高压合成CeTbO3+δ的XPS研究

 经过高温高压合成的CeTbO_3+δ进行了XPS研究，发现在1.0 GPa下，Tb⁴⁺在~600 ℃开始转变成Tb³⁺，而Ce⁴⁺在~800 ℃开始向Ce³⁺转变。在1 000~1 200 ℃形成单相萤石结构化合物CeTbO_3+δ的Ce是以Ce³⁺、Ce⁴⁺混合价形式存在，Tb全部变成Tb³⁺。实验表明，用Ce_3d谱上~888 eV峰的峰位及其与882 eV峰的相对强度变化可以定性判断化合物中是否含有Ce³⁺。研究了高温高压合成的CeTbO_3+δ的稳定性随时间的变化问题。     

Luminescence Spectra of YGG：RE^3＋, Bi^3＋ （RE = Eu and Tb） and Energy Transfer from Bi^3＋ to RE^3＋

We investigate the luminescence properties of Bi^3＋ and RE^3＋ （RE = Tb or Eu） in a Y3Ga5O12 （YGG） host system. The additional doping of Bi^3＋ can enhance the luminescence of Th^3＋ or Eu^3＋ in this host. Energy transfer from Bi^3＋ to Tb^3＋ and Eu^3＋ is observed and the mechanism of energy transfer is investigated. Mechanism of energy transfer can be explained as electric multipole interaction since the Bi^3＋ emission band and Tb^3＋ or Eu^3＋ excitation band overlaps and the Bi^3＋ emission intensity decreases while the intensity of Tb^3＋ or Eu^3＋ increases with the increase of Tb^3＋ or Eu^3＋ concentration. Therefore, Bi^3＋ ion is a kind of efficient sensitizer to the Tb^3＋ and Eu^3＋ activators in the Y3Ga5O12 host.     

Synthesis and characterization of core-shell structured SiO2@YVO4:Yb,Er microspheres

In this paper, the core-shell structured SiO₂@YVO₄:Yb³⁺,Er³⁺ microspheres have been successfully prepared via a facile sol-gel process followed by a heat treatment. X-ray diffraction, field emission scanning electron microscopy, energy disperse X-ray spectroscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence spectra were used to characterize the samples. The results reveal that the SiO₂ spheres have been successfully coated by YVO₄:Yb³⁺,Er³⁺ phosphors to form core-shell structures and the size of obtained microspheres has a uniform distribution. Additionally, the samples exhibit bright green luminescence under the excitation of a 980 nm laser diode. The photoluminescence intensity increases with the number of coatings. These core-shell structured SiO₂@YVO₄:Yb³⁺,Er³⁺ microspheres may have great potential in the fields of infrared detection and display devices.     

Luminescent properties of Eu-activated Sr3B2SiO8: A red-emitting phosphor for white light-emitting diodes

Single-phased Sr₃B₂SiO₈:Eu³⁺ phosphor was prepared by a solid-state method at 1020 °C. The luminescence spectra showed that Sr₃B₂SiO₈:Eu³⁺ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr₃B₂SiO₈:Eu³⁺ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive ⁵D₀→⁷F₂ transition of Eu³⁺. The luminescence intensity of Sr₃B₂SiO₈:Eu³⁺ at 611 and 620 nm reached the maximum when the doping content of Eu³⁺ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr₃B₂SiO₈:Eu³⁺ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes.