| VUV/UV/X-Ray Excited Luminescent Properties of Eu^3＋ and Pr^3＋ Doped BiSbO4 |
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| 引用本文： | 李会亮,;王小军,;袁军林,;赵景泰,;杨昕昕,;张志军,;陈吴鸿,;张国斌,;施朝淑.VUV/UV/X-Ray Excited Luminescent Properties of Eu^3＋ and Pr^3＋ Doped BiSbO4[J].中国物理快报,2008,25(10):3790-3793. |
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| 作者姓名： | 李会亮 ;王小军 ;袁军林 ;赵景泰 ;杨昕昕 ;张志军 ;陈吴鸿 ;张国斌 ;施朝淑 |
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| 作者单位： | [1]State Key Laboratory of High Performance Ceramics and Superfine Microstruc~ure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050; [2]Graduate School of Chinese Academy of Sciences, Belling 100049; [3]National Synchrotron Radiation Laboratory, University of Science and Technology of China, Heifei 230026 |
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| 基金项目： | Supported by the National Basic Research Programme of China under Grant No 2007CB936704, the Major Basic Research Programme of Shanghai under Grant No 07DJ14001, and the Partner Group Project between CAS and MPG. |
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| 摘 要： | Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3＋ and Pr^3＋ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3＋ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3＋ ions occupied Bi^3＋ sites, and there could be an energy transfer from Bi^3＋ ions to RE^3＋ ions.
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| 关 键 词： | 半导体 锑酸铋 铕 镨 掺杂 光致发光特性 |
| 收稿时间： | 2008-3-27 |
VUV/UV/X-Ray Excited Luminescent Properties of Eu3+ nd Pr3+ Doped BiSbO4 |
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| LI Hui-Liang,WANG Xiao-Jun,YUAN Jun-Lin,ZHAO Jing-Tai,YANG Xin-Xin,ZHANG Zhi-Jun,CHEN Hao-Hong,ZHANG Guo-Bin,SHI Chao-Shu.VUV/UV/X-Ray Excited Luminescent Properties of Eu3+ nd Pr3+ Doped BiSbO4[J].Chinese Physics Letters,2008,25(10):3790-3793. |
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| Authors: | LI Hui-Liang WANG Xiao-Jun YUAN Jun-Lin ZHAO Jing-Tai YANG Xin-Xin ZHANG Zhi-Jun CHEN Hao-Hong ZHANG Guo-Bin SHI Chao-Shu |
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| Institution: | State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050Graduate School of Chinese Academy of Sciences, Beijing 100049National Synchrotron Radiation Laboratory, University of Science and Technology of China, Heifei 230026 |
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| Abstract: | Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu3+ and Pr3+ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu3+ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu3+ ions occupied Bi3+ sites, and there could be an energy transfer from Bi3+ ions to RE3+ ions. |
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| Keywords: | 78 55 -m 75 50 Pp 78 55 Hx |
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