ECR-CVD法制备的a-C:F:H薄膜在N2气氛中的热退火研究

改变CHF3CH4源气体流量比,使用微波电子回旋共振化学气相沉积方法(ECRCVD)制备了具有不同C—F键结构的aC:F:H薄膜,着重研究了退火对其结构的影响.结果显示薄膜的厚度及其光学带隙E04随退火温度的上升均呈现了不同程度的下降.借助于红外吸收光谱和所提出的热解模型解释了产生这种关系的结构上的根源. 关键词： 电子回旋共振化学气相沉积 红外吸收光谱 热退火 光学带隙     

采用热丝辅助的新型微波电子回旋共振法制备高质量的氢化非晶硅薄膜

采用热丝辅助的新型微波电子回旋共振法制备了高质量的氢化非晶硅薄膜。在制备过程中，热丝对改进薄膜微结构，提高稳定性及光电特性方面起到了重要的作用。实验结果表明：在薄膜的微结构中，硅氢二键含量显著减少并出现了少量微晶相，其有利于改善薄膜的稳定性；在薄膜的光电特性方面，薄膜的沉积速率及光敏性分别达到了2.0nm/s和4.71*105以上。     

HW-MWECR-CVD法制备氢化微晶硅薄膜及其微结构研究

用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明，当反应气体中SiH₄浓度在3.6%—50%之间大范围变化时，μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明，在SiH₄浓度较大时制备的薄膜，其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH₄气体高度分解，等离子体高度电离. 关键词： 微波电子回旋共振化学气相沉积 氢化微晶硅薄膜 拉曼散射 X射线衍射     

稳定、优质nc-Si/a-Si:H薄膜的研制和特性分析

利用等离子体增强化学气相沉积技术研制出了优质稳定的氢化非晶-纳米晶两相结构硅薄膜.薄膜的光电导率相对于器件质量的非晶硅有两个数量级的提高；光敏性也较好，光、暗电导比可以达到１０⁴，此外薄膜的光电导谱具有更宽的长波光谱响应.更为重要 的是薄膜的光致退化效应远小于典型的非晶硅薄膜，在光强为５０ｍW／ｃｍ²的卤钨灯光 照２４h后，光电导的衰退小于１０％.这种薄膜优良的光电性能源于薄膜中的非晶母体的存在使其在 光学跃迁中的动量选择定则发生松弛，因而具有大的光学吸收系数和 关键词： 非晶硅 微结构 光致变化     

真空退火对氟化非晶碳薄膜结构的影响

在苯(C6H6)和四氟化碳(CF4)混合气体中,用微波电子回旋共振等离子体化学气相沉积技术(ECRCVD)在不同功率下制备了氟化非晶碳膜(aC:F),为了检测膜的热稳定性对其进行了真空退火处理,测量了退火前后膜厚的变化率,并用傅里叶变换红外吸收光谱(FTIR)研究了其结构的变化.结果表明,膜厚变化率与沉积功率有关;400℃退火后低功率下沉积的膜的结构变化显著,高功率下沉积的膜则呈现了较好的热稳定性. 关键词： ECR-CVD aC:F薄膜 真空退火     

用SiCl4/H2气源沉积多晶硅薄膜光照稳定性的研究

对以SiH₄/H₂及SiCl₄/H₂为源气体、采用 等离子体增强化学气相沉积技术制备的非晶硅薄膜和多晶硅薄膜进行了光照稳定性的研究.实验表明，制备的多晶硅薄膜并没有出现 非晶硅中的光致衰减现象，其光电导、暗电导在光照过程中没有下降反而有所上升且电导率 变化快慢受氢稀释度的制约.多晶硅薄膜的光照稳定性可能来源于高的晶化度及Cl元素的存在. 关键词： 多晶硅薄膜 稳恒光电导效应 晶界 光致衰退效应     

不同退火温度下晶化硅薄膜的电学输运性质

采用等离子体化学气相沉积技术制备氢化非晶硅薄膜,经过不同温度下的热退火处理,使薄膜由非晶结构向晶化结构转变,得到含有纳米晶粒的晶化硅薄膜.在晶化过程中,采用Raman技术对样品的结构进行表征.通过变温电导率的测试,对薄膜的电学输运性质进行了分析.研究结果表明：退火温度为700 ℃时,样品中开始有纳米晶形成,随着退火温度的增加,样品的晶化比增大,在1000 ℃时,薄膜的晶化比达到90%以上.在700 ℃退火时,薄膜中晶化成分较低,载流子的传输特性主要受到与硅悬挂键有关的缺陷态影响,表现为带尾定域态的跳跃电导 关键词： 氢化非晶硅 退火 纳米硅 电输运     

氢化非晶硅叠层薄膜对单晶硅表面钝化研究

采用等离子体增强化学气相沉积法生长的单层本征氢化非晶硅薄膜对单晶硅片进行钝化,结果表明增加氢稀释比有利于减少薄膜中的缺陷,增强钝化效果,过量的氢稀释比会导致非晶硅在硅片表面的外延晶化生长,降低钝化效果。退火导致非晶硅晶化程度增加,降低了钝化效果,同时退火提升了薄膜的质量,改变了H键合方式,增强了钝化效果。因此,单层氢化非晶硅只有在合适的氢稀释比和退火温度才可以获得最佳钝化效果。为了提高非晶硅薄膜对硅片的钝化效果,采用具有高低氢稀释比的叠层本征非晶硅薄膜对硅片进行钝化。因此将高氢稀释比沉积的非晶硅薄膜叠层生长于低氢稀释比的薄膜之上,避免非晶硅在硅片表面的外延生长。在退火过程中,高氢稀释比薄膜中的氢扩散到低氢稀释比薄膜中,有效地钝化了非晶硅中和单晶硅表面的悬挂键,改善了非晶硅/硅片的界面质量,叠层钝化后硅片的少子寿命为7.36 ms,隐含开路电压为732 mV。     

源气体对沉积的a-C∶F∶H薄膜结构的影响

采用微波电子回旋共振等离子体化学气相沉积(MWPECRCVD)方法,使用不同的源气体(CHF3CH4,CHF3C2H2,CHF3C6H6)体系制备了aC∶F∶H薄膜.由于CH4,C2H2,C6H6气体在等离子体中的分解反应不同导致了薄膜的沉积速率和结构上的差异.红外吸收谱的结果表明,用C6H6CHF3作为源气体沉积的薄膜中几乎不含H,而用C2H2CHF3所沉积的薄膜中的含氟量最高,其相应的CF振动峰位向高频方向偏移.薄膜的真空退火结果表明,aC∶F∶H薄膜的热稳定性除了取决于薄膜的CC键浓度外,还与CC键 关键词： 氟化非晶碳膜 电子回旋共振化学气相沉积 红外吸收光谱     

微波电子回旋共振—化学气相沉只SiNx薄膜的光学性能研究

研究了微波电子回旋共振－化学气相沉积ＳｉＮｘ薄膜的光学性能，这种ＳｉＮｘ薄膜具有透光谱宽，透光率高的特点，总结了透光谱，折射率，光隙能随微波功率，基片温度的变化关系。     

Observational constraints on the accelerating universe in the framework of a 5D bounce cosmological model

In the framework of a five-dimensional (5D) bounce cosmological model, a useful function f(z) is obtained by giving a concrete expression of deceleration parameter q(z)=q₁+{q₂}/{1+ln (1+ z)}. Then using the obtained Hubble parameter H(z) according to the function f(z), we constrain the accelerating universe from recent cosmic observations: the 192 ESSENCE SNe Ia and the 9 observational H(z) data. The best fitting values of transition redshift z_T and current deceleration parameter q₀ are given as z_T= 0.65_-0.12^0.25 and q₀ = - 0.76_-0.15^+0.15 (1σ). Furthermore, in the 5D bounce model it can be seen that the evolution of equation of state (EOS) for dark energy w_de can cross over -1 at about z=0.23 and the current value w_0de= - 1.15<- 1. On the other hand, by giving a concrete expression of model-independent EOS of dark energy w_de, in the 5D bounce model we obtain the best fitting values z_T= 0.66_0.08^+0.11 and q₀ = - 0.69_0.10^+0.10 (1σ) from the recently observed data: the 192 ESSENCE SNe Ia, the observational H(z) data, the 3-year Wilkinson Microwave Anisotropy Probe (WMAP), the Sloan Digital Sky Survey (SDSS) baryon acoustic peak and the x-ray gas mass fraction in clusters.     

High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated, and irradiated with 1~MeV electrons up to a dose of 3.43× 10¹⁴~e/cm^-2. After radiation, the forward currents of the SBDs at 2~V decreased by about 50%, and the reverse currents at -200~V increased by less than 30%. Schottky barrier height (φ _B ) of the Ni/4H-SiC SBD increased from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased from 1.25~eV to 1.19~eV under -30~V irradiation bias. The degradation of φ _B could be explained by the variation of interface states of Schottky contacts. The on-state resistance (R_s) and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance (\rho_c) of the Ni/SiC Ohmic contact increased from 5.11× 10⁵~Ωega.cm² to 2.97× 10^-4~Ωega.cm².     

Two-electron and one-photon transitions in highly charged nickel-like ions

This paper calculates the transition wavelengths and probabilities of the two-electron and one-photon (TEOP) transition from the $(3{\rm s}^{-1}_{1/2}4{\rm d}_{j})_{J=1,2}$ to $(3{\rm p}^{-1}_{3/2}4{\rm s}_{1/2})_{J=1}$ and the $(3{\rm p}^{-1}_{1/2}4{\rm s}_{1/2})_{J=1}$ to $(3{\rm d}^{-1}_{j}4{\rm d}_{j'})_{J=1,2}$ for highly charged Ni-like ions with atomic number $Z$ in the range $47\leq Z\leq92$. In the calculations, the multi-configuration Dirac--Fock method and corresponding program packages GRASP92 and REOS99 were used, and the relativistic effects, correlation effects and relaxation effects were considered systematically. It is found that the TEOP transitions are very sensitive to the correlation of electrons, and the probabilities will be enhanced sharply in some special $Z$ regions along the isoelectronic sequence. The present TEOP transition wavelengths are compared with the available data from some previous publications, good agreement is obtained.     

Constraints on $H_0$ from WMAP and BAO Measurements *

We report the constraints of $H_0$ obtained from Wilkinson Microwave Anisotropy Probe (WMAP) 9-year data combined with the latest baryonic acoustic oscillations (BAO) measurements. We use the BAO measurements from 6dF Galaxy Survey (6dFGS), the SDSS DR7 main galaxies sample (MGS), the BOSS DR12 galaxies, and the eBOSS DR14 quasars. Adding the recent BAO measurements to the cosmic microwave background (CMB) data from WMAP, we constrain cosmological parameters $\Omega_m=0.298\pm0.005$, $H_0=68.36^{+0.53}_{-0.52} {\rm km}\cdot {\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.8170^{+0.0159}_{-0.0175}$ in a spatially flat $\Lambda$ cold dark matter ($\Lambda$CDM) model, and $\Omega_m=0.302\pm0.008$, $H_0=67.63\pm1.30 {\rm km}\cdot{\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.7988^{+0.0345}_{-0.0338}$ in a spatially flat $w$CDM model, respectively. Our measured $H_0$ results prefer a value lower than 70 ${\rm km}\cdot {\rm s}^{-1}\cdot{\rm Mpc}^{-1}$, consistent with the recent data on CMB constraints from Planck (2018), but in $3.1$ and $3.5\sigma$ tension with local measurements of SH0ES (2018) in $\Lambda$CDM and $w$CDM framework, respectively. Our results indicate that there is a systematic tension on the Hubble constant between SH0ES and the combination of CMB and BAO datasets.     

Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron (1.5~MeV) at 360~K. Two groups of samples with low [O_i]=6.9× 10¹⁷~cm^-3 and high [ O_i]=1.06× 10¹⁸~cm^-3 were used. We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen, it is hardly changed in the higher concentration of oxygen specimen. It was also found that the concentration of VO₂ in lower concentration of oxygen specimen gets to maximum at 450~℃ and then dissapears at 500~℃, accompanied with the appearing of VO₃. For both kinds of specimens, the concentration of VO₃ reachs to maximum at 550~℃ and does not disappear completely at 600~℃.     

Kiselev黑洞的热力学性质和物质吸积特性

本文考虑带有黑洞视界和宇宙视界的Kiselev时空.研究以黑洞视界和宇宙视界为边界的系统的热力学性质.统一地给出了两个系统的热力学第一定律;在黑洞视界半径远小于宇宙视界半径的情况下,近似地计算了通过宇宙视界和黑洞视界的热能.然后,探讨Kiselev时空的物质吸积特性.在吸积能量密度正比于背景能量密度的条件下给出黑洞的吸积率,讨论了黑洞吸积率与暗能量态方程参数的关系.     

Electron tunnelling phase time and dwell time through an associated delta potential barrier

The electron tunnelling phase time τP and dwell time τD through an associated delta potential barrier U(x) = ξδ(x) are calculated and both are in the order of 10^-17～10^-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h^2/meξ and the characteristic energy Ec=meξ^2/h^2 of the delta barrier, where me is the electron mass, lc and Ec are assumed to be the effective width and height of the delta barrier with lcEc=ξ, respectively. It is found that TD reaches its maximum and τD = τp as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc =λDB, λDB is de Broglie wave length of the electron.     

Searching for isotropic stochastic gravitational-wave background in the international pulsar timing array second data release

We search for isotropic stochastic gravitational-wave background (SGWB) in the International Pulsar Timing Array second data release. By modeling the SGWB as a power-law, we find very strong Bayesian evidence for a common-spectrum process, and further this process has scalar transverse (ST) correlations allowed in general metric theory of gravity as the Bayes factor in favor of the ST-correlated process versus the spatially uncorrelated common-spectrum process is 30 ± 2. The median and the 90% equal-tail amplitudes of ST mode are ${{ \mathcal A }}_{\mathrm{ST}}={1.29}_{-0.44}^{+0.51}\times {10}^{-15}$, or equivalently the energy density parameter per logarithm frequency is ${{\rm{\Omega }}}_{\mathrm{GW}}^{\mathrm{ST}}={2.31}_{-1.30}^{+2.19}\times {10}^{-9}$, at frequency of 1 year⁻¹. However, we do not find any statistically significant evidence for the tensor transverse (TT) mode and then place the 95% upper limits as ${{ \mathcal A }}_{\mathrm{TT}}\lt 3.95\times {10}^{-15}$, or equivalently ${{\rm{\Omega }}}_{\mathrm{GW}}^{\mathrm{TT}}\lt 2.16\times {10}^{-9}$, at frequency of 1 year⁻¹.     

Coherent interaction and action-counteraction theory in small polaron systems,and ground state properties

Based on the coherent interaction and action-counteraction principles, we investigate the ground state properties for small polaron systems, the coherent-squeezed fluctuation correction, and the anomalous lattice quantum fluctuation, with the new variational generator containing correlated squeezed-coherent coupling and quantum entanglement. Noting that $-2t $ is the T.B.A. energy, for the coherent interaction effect, we find the ground-state energy $E_0$ to be $-2.428t$, in which the coherent squeezed fluctuation correction $-A_0 t$ is $-0.463t $ (where $ t $ is the hopping integral, $\omega $ is the phonon frequency), with the electron-one-phonon coupling constant $g=$1 and the electron-two-phonon coupling constant $g_{1}=-0.1$. However, as a result of the action-counteraction effect, $\tilde{{E}}_{0} $ is $-2.788t$, but $-\tilde{{A}}_{0} t$ is $-0.735t$. As to the polaron binding energy $(E_{\rm P} )$, for the coherent interaction effect, $E_{\rm P} $ is $-1.38\omega $, but for the action-counteraction effect, $\tilde{{E}}_{\rm P}$ is $-1.88\omega $. In particular, the electron-two-phonon interaction noticeably enlarges the coherent interaction and the coherent squeezed quantum fluctuation correction. By intervening with the quantum entanglement, the evolutions of the squeezed coherent state and the lattice quantum fluctuation begin to take control. At that time, we encounter a new quantum phase coherence phenomenon — the collapse and revival of inversion repeatedly for the coherent state in the entangled evolution.     

Characteristics of temperature fluctuation in two-dimensional turbulent Rayleigh-Bénard convection

We study the characteristics of temperature fluctuation in two-dimensional turbulent Rayleigh–Benard convection in′a square cavity by direct numerical simulations.The Rayleigh number range is 1×10⁸≤Ra≤1×10¹³,and the Prandtl number is selected as Pr=0.7 and Pr=4.3.It is found that the temperature fluctuation profiles with respect to Ra exhibit two different distribution patterns.In the thermal boundary layer,the normalized fluctuationθrms/θrms,max is independent of Ra and a power law relation is identified,i.e.,θrms/θrms,max～(z/δ)0.99±0.01,where z/δis a dimensionless distance to the boundary(δis the thickness of thermal boundary layer).Out of the boundary layer,when Ra≤5×10⁹,the profiles ofθrms/θrms,max descend,then ascend,and finally drop dramatically as z/δincreases.While for Ra≥1×10¹⁰,the profiles continuously decrease and finally overlap with each other.The two different characteristics of temperature fluctuations are closely related to the formation of stable large-scale circulations and corner rolls.Besides,there is a critical value of Ra indicating the transition,beyond which the fluctuation hθrmsiV has a power law dependence on Ra,given by hθrmsiV～Ra?0.14±0.01.