共查询到17条相似文献,搜索用时 937 毫秒
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研究采用由过度层间隔吸收区与倍增区的InGaAs/InP雪崩光电二极管(SAGM APD)在红外通信波段实现单光子探测的方法,包括管型的选择、特性分析、工作参数以及根据实验结果提出的对这类APD设计制作的改进建议.特别研究目前市售的APD器件用作单光子探测时的实用技术. 相似文献
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基于1.5GHz多次谐波超短脉冲门控InGaAs/InP雪崩光电二极管的近红外单光子探测技术研究 总被引:1,自引:0,他引:1
提出了一种高速门控盖格模式的铟镓砷/铟磷雪崩光电二极管(InGaAs/InP APD)单光子探测技术。将1.5GHz多次谐波超短脉冲加载到InGaAs/InP APD上,盖革模式下的光生雪崩信号埋藏在短脉冲充放电形成的噪声中,采用700MHz低通滤波器实现了50.6dB的噪声抑制比,有效地提取出了雪崩信号。通过半导体制冷,使InGaAs/InP APD工作在-30℃,1.5GHz短脉冲驱动下的InGaAs/InP APD在1550nm的探测效率为35%,暗计数率为每门6.4×10-5,超过了单纯使用1.5GHz正弦门的探测性能,而且在15%的探测效率下,2.7ns后发生后脉冲的概率仅为每门6.0×10-5。 相似文献
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雪崩光电二极管单光子探测器是一种具有超高灵敏度的光电探测器件,在远距离激光测距、激光成像和量子通信等领域有非常重要的应用.然而,由于雪崩光电二极管单光子探测器的雪崩点对工作温度高度敏感,因此在外场环境下工作时容易出现增益波动,继而导致单光子探测器输出信号的延时发生漂移,严重降低了探测器的时间稳定性.本文发展了一种稳定输出延时的方法,采用嵌入式系统控制雪崩光电二极管,使其处于恒定温度,并实时补偿由环境温度引起的延时漂移,实现了雪崩光电二极管单光子探测器的高时间稳定性探测.实验中,环境温度从16 ℃变化到36 ℃,雪崩光电二极管的工作温度稳定在15 ℃,经过延时补偿,雪崩光电二极管单光子探测器输出延时漂移小于±1 ps,时间稳定度达到0.15 ps@100 s.这项工作有望为全天候野外条件和空间极端条件下的高精度单光子探测应用提供有效的解决方法. 相似文献
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为了选择高性能单光子探测器件,采用无源抑制方法对工作在盖革模式下的雪崩光电二极管(APD: avalanche photodiode)特性进行了测量。利用APD两端的电压在雪崩后趋于稳定的特性,获得了一种确定暗击穿电压的方法。特性测量实验结果表明:降低温度能加宽APD的最佳工作区域范围,并提高最佳增益值,从而使APD具有更高的灵敏度。通过对EG&;G系列APD和外延APD暗电流和信噪比特性进行比较,发现外延 APD具有良好的噪声性能和信噪比性能,适用于单光子探测。 相似文献
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Internal cancellation of spikes using two avalanche photodiodes in series for single photon detection 下载免费PDF全文
<正>We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength.In this method,the raw single photon avalanche signals are not attenuated,thus a high signal-to-noise ratio can be obtained compared with the existing results.The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10~(-4) at 213 K. 相似文献
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Detection efficiency characteristics of free-running In Ga As/In P single photon detector using passive quenching active reset IC 下载免费PDF全文
In Ga As/In P avalanche photodiodes(APD) are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector's afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector's performance is consistent with gated operation. 相似文献
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《中国光学快报(英文版)》2021,(9)
Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes(APDs). In this work, avalanche characteristics and single photon counting performance of 4 H-Si C n-i-p and p-i-n APDs are compared. By studying the evolution of breakdown voltage as a function of incident light wavelength, it is confirmed that at the deep ultraviolet(UV) wavelength region the avalanche events in 4 H-Si C n-i-p APDs are mainly induced by hole-initiated ionization,while electron-initiated ionization is the main cause of avalanche breakdown in 4 H-Si C p-i-n APDs. Meanwhile, at the same dark count rate, the single photon counting efficiency of n-i-p APDs is considerably higher than that of p-i-n APDs. The higher performance of n-i-p APDs can be explained by the larger impact ionization coefficient of holes in 4 H-Si C. In addition, this is the first time, to the best of our knowledge, to report single photon detection performance of vertical 4 H-Si C n-i-p-n APDs. 相似文献
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Sheng Zhang Jian Wang Chao-jing Tang 《International Journal of Theoretical Physics》2012,51(9):2719-2726
It has been showed that most commercial quantum cryptosystems are vulnerable to the fake-state attacks, which employ the loophole that the avalanche photodiodes as single photon detectors still produce detection events in the linear mode. However, previous fake-state attacks may be easily prevented by either installing a watch dog or reconfiguring the dead-time assigning component. In this paper, we present a new technique to counteract the after-pulse effect ever enhanced by the fake-state attacks, in order to lower the quantum bit error rate. Obviously, it is more difficult to detect the presented attack scheme. Indeed, it contributes to promoting of implementing a secure quantum cryptosystem in real life. 相似文献
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光电探测器是一类用于接收光波并转变为电信号的专门器件,文章描述了PIN光电二极`管雪崩光电二极管、MSM(金属-半导体-金属)光电二极管的器件结构和工作原理,并对它们的响应度、噪声、带宽等特性进行了讨论,这类器件已在光通信、光信息处理等许多系统中得到广泛的应用。 相似文献