共查询到17条相似文献,搜索用时 125 毫秒
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结合利用雪崩光电二极管(APD)进行红外单光子探测电路模型的工作原理和特点以及传输线瞬态电脉冲产生的过程,提出了将传输线瞬态过程脉冲发生电路模型用于APD雪崩抑制的一种新方法,该方法可以实现利用APD门模工作方式进行红外单光子探测的过程.主要从理论上计算了红外单光子信号入射APD时,传输线脉冲发生电路模型中负载电阻输出电脉冲的特点,讨论了传输线终端不同边界条件对输出电脉冲的影响,通过理论计算确定了这种利用APD进行红外单光子探测新模型的电路结构与参数,证明了该电路模型用于红外单光子探测APD门模工作方式的
关键词:
红外单光子探测技术
雪崩光电二极管(APD)
抑制电路
传输线瞬态过程 相似文献
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研究采用由过度层间隔吸收区与倍增区的InGaAs/InP雪崩光电二极管(SAGM APD)在红外通信波段实现单光子探测的方法,包括管型的选择、特性分析、工作参数以及根据实验结果提出的对这类APD设计制作的改进建议.特别研究目前市售的APD器件用作单光子探测时的实用技术. 相似文献
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基于砷化镓/磷化铟雪崩光电二极管(InGaAs/InP APD)的半导体单光子探测器因工作在通信波段,且具有体积小、成本低、操作方便等优势,在实用化量子通信技术中发挥了重要作用.为尽可能避免暗计数和后脉冲对单光子探测的影响,InGaAs/InP单光子探测器广泛采用门控技术来快速触发和淬灭雪崩效应,有效门宽通常在纳秒量级.本文研究揭示了门控下单光子探测器可测量的最大符合时间宽度受限于门控脉冲的宽度,理论分析与实验结果良好拟合.该研究表明,门控下InGaAs/InP单光子探测器用于双光子符合测量具有显著的时域滤波特性,限制了其在基于双光子时间关联测量的量子信息技术中的应用. 相似文献
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Detection efficiency characteristics of free-running In Ga As/In P single photon detector using passive quenching active reset IC 下载免费PDF全文
In Ga As/In P avalanche photodiodes(APD) are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector's afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector's performance is consistent with gated operation. 相似文献
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Internal cancellation of spikes using two avalanche photodiodes in series for single photon detection 下载免费PDF全文
<正>We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength.In this method,the raw single photon avalanche signals are not attenuated,thus a high signal-to-noise ratio can be obtained compared with the existing results.The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10~(-4) at 213 K. 相似文献
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A rigorous theoretical model for In 0.53 Ga 0.47 As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition.In the model,low field impact ionizations in charge and absorption layers are allowed,while avalanche breakdown can occur only in the multiplication layer.The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition.When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value,generation-recombination in the absorption layer is the dominative mechanism;otherwise band-to-band tunneling in the multiplication layer dominates the dark counts.The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency.However,when the multiplication layer width exceeds 1 μm,the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes. 相似文献
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John M. Hayes Farzan Gity Brian Corbett Alan P. Morrison 《Optical and Quantum Electronics》2012,44(3-5):119-124
The influence of interface donor and acceptor traps on the behavior of Ge/Si separate absorption, charge and multiplication Geiger mode avalanche photodiodes under passive quenching is modeled. The effects of different trap types on the quenching behavior are investigated in this paper for the first time. Our results show that trap type and trap density significantly influence the APD quenching time and ability to quench for a particular quenching resistor. 相似文献