通讯波段单光子探测器的研制

将InGaAs/InP雪崩光电二极管应用于盖革模式下,采用门脉冲模式淬灭雪崩,并使用魔T混合网络抑制尖峰噪声,实现了通信波段1550 nm的单光子探测.在APD工作温度为223 K时,测得暗计数率与探测效率的比值为0.035.     

用于红外单光子探测的雪崩光电二极管传输线抑制电路模型的理论分析

结合利用雪崩光电二极管(APD)进行红外单光子探测电路模型的工作原理和特点以及传输线瞬态电脉冲产生的过程,提出了将传输线瞬态过程脉冲发生电路模型用于APD雪崩抑制的一种新方法,该方法可以实现利用APD门模工作方式进行红外单光子探测的过程.主要从理论上计算了红外单光子信号入射APD时,传输线脉冲发生电路模型中负载电阻输出电脉冲的特点,讨论了传输线终端不同边界条件对输出电脉冲的影响,通过理论计算确定了这种利用APD进行红外单光子探测新模型的电路结构与参数,证明了该电路模型用于红外单光子探测APD门模工作方式的 关键词： 红外单光子探测技术 雪崩光电二极管(APD) 抑制电路 传输线瞬态过程     

The analysis of the integral gated mode single photon detector

This paper critically analyses and simulates the circuit configuration of the integral gated mode single photon detector which is proposed for eliminating the transient spikes problem of conventional gated mode single photon detector. The relationship between the values of the circuit elements and the effect of transient spikes cancellation has been obtained. With particular emphasis, the bias voltage of the avalanche photodiode and the output signal voltage of the integrator have been calculated. The obtained analysis results indicate that the output signal voltage of the integrator only relates to the total quantity of electricity of the avalanche charges by choosing the correct values of the circuit elements and integral time interval. These results can be used to optimize the performance of single photon detectors and provide guides for the design of single photon detectors.     

单光子探测技术

近年来,以量子密钥分配为代表的各种量子信息技术应用获得了飞速发展,这些应用对单光子探测器的性能提出了非常苛刻的要求,以光电倍增管和雪崩光电二极管为代表的传统单光子探测器件已经无法满足需求。在此背景下,出现了以超导单光子探测器为代表的新型低温单光子探测器件,其性能比现有商用单光子探测器有了本质性的提升。本文综述了迄今为止各种类型的单光子探测器,并指出各自在量子信息技术应用中的优势和不足之处以及发展方向。     

Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes

A rigorous theoretical model for In 0.53 Ga 0.47 As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition.In the model,low field impact ionizations in charge and absorption layers are allowed,while avalanche breakdown can occur only in the multiplication layer.The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition.When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value,generation-recombination in the absorption layer is the dominative mechanism;otherwise band-to-band tunneling in the multiplication layer dominates the dark counts.The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency.However,when the multiplication layer width exceeds 1 μm,the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.     

Detection efficiency characteristics of free-running In Ga As/In P single photon detector using passive quenching active reset IC

In Ga As/In P avalanche photodiodes(APD) are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector's afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector's performance is consistent with gated operation.     

硅雪崩光电二极管单光子探测器

将硅雪崩光电二极管应用于盖革模式下,制作出高量子效率、低噪音、短死时间的单光子探测器.设计并制作了雪崩抑制电路,获得探测器特性参量为无源抑制方式下死时间1μs,有源抑制下60～80ns,输出脉冲宽度15～20ns.并详细检测了探测器直到液氮温度下的特性.观察到一些新现象.     

盖革模式下反偏压对雪崩光电二极管贯穿特性的影响

利用无源抑制技术,研究了盖革模式下雪崩光电二极管（APD）的电流一电压特性。发现光电流和暗电流的一个显著区别是暗电流不反映贯穿特性,这是光生栽流子和热载流子有不同统计分布的实验证据,也说明在盖革模式下,暗计数增加比光子探测效率增加更快的原因是由于载流子收集效率不同引起的。根据其贯穿特性适当选择盖革模式下APD的反偏压可提高单光子探测器的信噪比。     

同轴电缆反射方案单光子探测器的特性研究

分析了用于消除门控单光子探测器电尖峰噪声的同轴电缆反射方案的特性.重点分析了该方案中,雪崩光电二极管的偏置电压和输出信号的变化特性.根据理论分析的结果,给出了不同的单光子信号与两个门控脉冲的时序关系的确定依据,以及该方案对电尖峰噪声的消除效果,同时给出了探测系统的最小探测周期.并对理论分析的结果进行了实验验证,实验中测得尖峰噪声的抑制比为25.1dB,实验结果与理论分析相符.这些分析结果将有助于红外单光子探测器的设计和性能的优化.     

Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes(APDs). In this work, avalanche characteristics and single photon counting performance of 4 H-Si C n-i-p and p-i-n APDs are compared. By studying the evolution of breakdown voltage as a function of incident light wavelength, it is confirmed that at the deep ultraviolet(UV) wavelength region the avalanche events in 4 H-Si C n-i-p APDs are mainly induced by hole-initiated ionization,while electron-initiated ionization is the main cause of avalanche breakdown in 4 H-Si C p-i-n APDs. Meanwhile, at the same dark count rate, the single photon counting efficiency of n-i-p APDs is considerably higher than that of p-i-n APDs. The higher performance of n-i-p APDs can be explained by the larger impact ionization coefficient of holes in 4 H-Si C. In addition, this is the first time, to the best of our knowledge, to report single photon detection performance of vertical 4 H-Si C n-i-p-n APDs.     

Photon counts modulation in optical time domain reflectometry

The quantum fluctuation of photon counting limits the field application of optical time domain reflection. A method of photon counts modulation optics time domain reflection with single photon detection at 1.55 μm is presented. The influence of quantum fluctuation can be effectively controlled by demodulation technology since quantum fluctuation shows a uniform distribution in the frequency domain. Combined with the changing of the integration time of the lock-in amplifier, the signal to noise ratio is significantly enhanced. Accordingly the signal to noise improvement ratio reaches 31.7 dB compared with the direct photon counting measurement.     

Impact of picosecond laser pulse waveform on detection efficiency of gated-mode avalanche photodiodes for quantum key distribution

Detection efficiency is one of the key parameters that affect the performance of gated-mode avalanche photodiodes in quantum key distribution. In this paper, the impact of the waveform of faint picosecond laser pulses on detection efficiency is investigated both experimentally and analytically. Two kinds of laser pulses are attenuated to the single photon level to measure and plot single photon detection efficiency versus synchronous delay between the detector and the laser source. The results show that the narrower laser pulse with single peak can be detected with about 9% higher detection efficiency and lead to a lower QBER than the pulse with subpeak and a broadened pedestal.     

基于标记配对相干态光源的诱骗态量子密钥分配性能分析

从有效性、稳定性和可行性三个方面, 对基于标记配对相干态光源的诱骗态量子密钥分配的性能进行了全面分析. 采用四组实验数据对基于标记配对相干态光源的三强度诱骗态方案的密钥生成效率、量子比特误码率和最优信号态强度与安全传输距离之间的关系进行了仿真和分析; 考虑到光源涨落, 对方案的稳定性进行了讨论和仿真; 并对基于标记配对相干态光源设计简单易实现方案的可行性进行了分析. 结论表明: 基于标记配对相干态光源的诱骗态方案性能在安全传输距离和密钥生成效率两方面都优于现有基于弱相干态光源和预报单光子源的诱骗态方案; 在光源强度涨落相同条件下, 标记配对相干态光源的稳定性逊于预报单光子源, 而优于相干态光源. 但是标记配对相干态光源在有效性上的优势可弥补其在稳定性上的不足; 且标记配对相干态光源的双模特性为设计简单易实现的被动诱骗态方案提供了条件. 关键词： 量子光学 量子密钥分配 标记配对相干态光源 性能     

Active demultiplexing of single photons from a solid‐state source

A scheme for active temporal‐to‐spatial demultiplexing of single photons generated by a solid‐state source is introduced. The scheme scales quasi‐polynomially with photon number, providing a viable technological path for routing n photons in the one temporal stream from a single emitter to n different spatial modes. Active demultiplexing is demonstrated using a state‐of‐the‐art photon source—a quantum‐dot deterministically coupled to a micropillar cavity—and a custom‐built demultiplexer—a network of electro‐optically reconfigurable waveguides monolithically integrated in a lithium niobate chip. The measured demultiplexer performance can enable a six‐photon rate three orders of magnitude higher than the equivalent heralded SPDC source, providing a platform for intermediate quantum computation protocols.

     

单光子探测器APD无源抑制特性研究

为了选择高性能单光子探测器件，采用无源抑制方法对工作在盖革模式下的雪崩光电二极管（APD: avalanche photodiode）特性进行了测量。利用APD两端的电压在雪崩后趋于稳定的特性，获得了一种确定暗击穿电压的方法。特性测量实验结果表明：降低温度能加宽APD的最佳工作区域范围，并提高最佳增益值，从而使APD具有更高的灵敏度。通过对EG&;G系列APD和外延APD暗电流和信噪比特性进行比较，发现外延 APD具有良好的噪声性能和信噪比性能，适用于单光子探测。     

单光子探测器性能对量子密钥分发系统的影响

根据量子密钥分发协议的原理和单光子探测器的工作模式系统分析了单光子探测器性能对量子密钥分发系统影响的物理模型,给出了单光子探测器暗计数和量子效率对系统筛选码率和量子误码率等指标产生影响的计算公式,并通过对各类量子密钥分发系统的比较,推导出了适用于一般量子密钥分发系统的普适结果。结果表明,在同等条件下采用较少的探测时间门可以提高量子密钥分发系统的性能。     

向长波方向发展的光子数分辨探测技术

研究了光子数分辨探测器技术发展的物理基础，技术现状和发展趋势．重点分析了目前能达到单光子分辨的发展中的三种探测技术：越界超导传感技术（superconducting transition-edge sensor），电荷积分单光子探测技术（charge integration photon detection）和雪崩光电二极管单光子分布探测技术（delayed single photon probability mapping based on avalanche photodiode），讨论了探测器的光子数分辨能力及其噪音来源．     

超导转变边沿单光子探测器原理与研究进展

量子信息技术近十多年来的快速发展对单光子探测器的性能提出了更高的要求,高性能单光子探测器也因此受到了更多的关注.与传统的单光子探测器相比,超导转变边沿(TES)单光子探测器在探测效率、能量分辨、光子数分辨和暗计数等方面具有突出优势.目前,超导TES单光子探测器已经被成功地应用在量子光学实验和量子密钥分配系统中,未来在量子信息技术等研究领域具有更广泛的应用.本文从超导TES单光子探测器的工作原理、制备流程、测试系统、主要性能指标以及研究现状和进展等方面对该探测器技术进行简要综述.     

TiO2∶Mo体系的光子雪崩上转换

在978nm激光二极管的激发下，Mo掺杂的TiO₂材料表现出很强的宽带上转换发光 ，该发光来源于［MoO₄］^2-基团的激发态³T₁, ³T₂能级到基态¹A₁能级的电子跃迁.通过研究发光强度与抽运功率的关系及上转换发光的上升时间曲线，发现TiO₂∶Mo体系的上转换发光中存在着雪崩机制，应用转 关键词： 上转换 光子雪崩 转移函数理论     

"量身定做"单光子波包:在量子网络中控制光子/自旋量子界面

文章简要地介绍了如何在量子网络中控制量子界面动力学以实现静态量子比特和动态量子比特的相互转换．具体言之，该界面由半导体量子点、固体光学微腔以及光学波导管构成，静态及动态比特分别为量子点中的电子自旋和波导管中的单光子波包所携带．界面动力学的控制则是基于对量子点、微腔和波导管耦合系统的量子电动力学的严格求解．据此可实现网络中两个远距离节点间的量子态传输、交换以及确定性的建立量子纠缠等量子操作．上述量子界面亦可用于任意指定波形的单光子源或者单光子探测装置。