APD探测器模块性能及噪声检测

为了实现可见光通信系统的探测器模块微小型化,设计并制作了一款50 cm3的温控APD探测器模块,并对模块的稳定性、温控效果和噪声特性进行了检测。结果表明,APD探测器模块的光电流测量平均相对偏差为0.795%;APD探测器的雪崩增益和响应度随着温度的降低而提高;APD探测器电阻的变化影响负载电阻分压,使得过剩噪声因子的测量值远大于真实值,且会随着入射光功率的增大而增大。可以得出结论:提高反向偏置电压与降低温控温度相配合,更有利于弱光信号检测;检测电路中的负载电阻影响APD探测器噪声特性。     

基于非线性相关源雪崩管模型的恒虚警激光测距电路仿真试验研究

依据雪崩光电二极管（APD）产品数据手册中雪崩增益、噪声（温度）与偏压的相关关系通过曲线拟合建立了APD输入、输出和偏压控制的函数模型，并基于非线性相关源控件构建了APD的电路仿真模型。设计了具有恒虚警APD偏压自动控制以及防近程散射时间增益控制的测距电路，引入自动增益控制信号，完成了恒虚警激光测距电路的全闭环动态仿真试验研究。仿真结果表明，恒虚警测距电路可根据虚警率设计值自动捕捉APD最佳雪崩增益工作偏压，虚警率每百毫秒60～70次时最小可探测光功率达到25 nW，与实际值接近，验证了恒虚警全闭环仿真模型的可行性。     

单光子探测器APD无源抑制特性研究

为了选择高性能单光子探测器件，采用无源抑制方法对工作在盖革模式下的雪崩光电二极管（APD: avalanche photodiode）特性进行了测量。利用APD两端的电压在雪崩后趋于稳定的特性，获得了一种确定暗击穿电压的方法。特性测量实验结果表明：降低温度能加宽APD的最佳工作区域范围，并提高最佳增益值，从而使APD具有更高的灵敏度。通过对EG&;G系列APD和外延APD暗电流和信噪比特性进行比较，发现外延 APD具有良好的噪声性能和信噪比性能，适用于单光子探测。     

基于1.5GHz多次谐波超短脉冲门控InGaAs/InP雪崩光电二极管的近红外单光子探测技术研究

提出了一种高速门控盖格模式的铟镓砷/铟磷雪崩光电二极管(InGaAs/InP APD)单光子探测技术。将1.5GHz多次谐波超短脉冲加载到InGaAs/InP APD上,盖革模式下的光生雪崩信号埋藏在短脉冲充放电形成的噪声中,采用700MHz低通滤波器实现了50.6dB的噪声抑制比,有效地提取出了雪崩信号。通过半导体制冷,使InGaAs/InP APD工作在-30℃,1.5GHz短脉冲驱动下的InGaAs/InP APD在1550nm的探测效率为35%,暗计数率为每门6.4×10-5,超过了单纯使用1.5GHz正弦门的探测性能,而且在15%的探测效率下,2.7ns后发生后脉冲的概率仅为每门6.0×10-5。     

基于雪崩光电二极管的弱光探测技术研究

通过采用无源抑制方法对雪崩光电二极管的弱光探测技术进行了研究,分析了工作在盖革模式下的InGaAs APD的特性。利用APD两端的偏置电压VB在其雪崩后趋于稳定的特性,确定了其雪崩暗击穿电压,并且在水冷温控系统中,测得了APD雪崩暗击穿电压与温度的关系。结果表明,APD的雪崩暗击穿电压随着温度的上升而增大,光子群(弱光)到达时,APD探测到的在某一幅值处的脉冲数明显增加,其脉冲幅度也将增大。     

通讯波段单光子探测器的研制

将InGaAs/InP雪崩光电二极管应用于盖革模式下,采用门脉冲模式淬灭雪崩,并使用魔T混合网络抑制尖峰噪声,实现了通信波段1550 nm的单光子探测.在APD工作温度为223 K时,测得暗计数率与探测效率的比值为0.035.     

基于APD线列的单光子探测计数研究

单光子探测系统可以对单个光子进行探测;探测系统含有探测部分、淬灭电路部分和计数部分;探测部分主要由工作在盖革模式下的雪崩光电二极管组成;在盖革模式下的雪崩光电二极管发生雪崩后不能自然停止,淬灭部分主要为了主动抑制雪崩电流,快速降低雪崩电压,以达到提高探测效率,降低错误计数的目的;APD线列产生多个光子脉冲信号,计数部分的主要功能是对多路光子脉冲信号进行计数、显示并且可以控制每路APD的比较电压,保证每路APD淬灭电路的正常工作。     

高耐压和低暗计数SiC紫外雪崩光电二极管

碳化硅（SiC）雪崩光电二极管（APD）是一种独具优势的微弱紫外光探测器,其过偏压承受能力是确保器件可靠工作的一个重要因素。本工作设计并制备了穿通型SiC吸收层-电荷控制层-雪崩倍增层分离（SACM）APD。基于这种结构,器件电场从雪崩倍增层向吸收层扩展,从而减小了雪崩倍增层内电场强度变化率,最终将器件过偏压承受能力提高到10 V;得益于吸收层的分压,雪崩倍增层的电场强度得到有效降低,载流子隧穿可能性减小,这能够有效降低器件暗计数,从而有利于提高器件探测灵敏度;此外,设计的SiC SACM APD倾斜台面仅刻蚀到雪崩倍增层上表面,这能够让器件填充因子提高至约60%,显著改善了深刻蚀导致的传统SACM结构有效光敏区域减小的问题。     

用于红外单光子探测的雪崩光电二极管传输线抑制电路模型的理论分析

结合利用雪崩光电二极管(APD)进行红外单光子探测电路模型的工作原理和特点以及传输线瞬态电脉冲产生的过程,提出了将传输线瞬态过程脉冲发生电路模型用于APD雪崩抑制的一种新方法,该方法可以实现利用APD门模工作方式进行红外单光子探测的过程.主要从理论上计算了红外单光子信号入射APD时,传输线脉冲发生电路模型中负载电阻输出电脉冲的特点,讨论了传输线终端不同边界条件对输出电脉冲的影响,通过理论计算确定了这种利用APD进行红外单光子探测新模型的电路结构与参数,证明了该电路模型用于红外单光子探测APD门模工作方式的 关键词： 红外单光子探测技术 雪崩光电二极管(APD) 抑制电路 传输线瞬态过程     

具有温度补偿的APD数控偏压电路

针对脉冲激光测距机工作环境温度变化和不同测距目标的需要,设计了一种具有温度补偿功能的雪崩光电二极管（APD）数控偏压电路,并对电路系统进行了理论分析和试验验证。结果表明,电路系统输出电压不仅可以有效地减少环境温度对APD增益的影响,而且能够根据上位机指令调节偏压大小,保证APD处于最佳工作状态,使测距机性能得到优化。     

Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge,Si and GaAs

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kanedaet al. Supported by National Science Council, the Republic of China     

Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge,Si and GaAs

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes. The temperature coefficient of avalanche breakdown voltage in a high field region is studied. Finally the response time of a PIN APD in these materials is discussed.This paper is supported by the National Science Council, the Republic of China.     

Breakdown-quenching characteristics and mechanisms for silicon photomultipliers

Some deviant breakdown-quenching characteristics of silicon photomultipliers are demonstrated and their physical mechanisms are explored. “Twice breakdown” phenomenon, “flat-topped” avalanche pulses and the determination method of the real breakdown voltage of the detector are analyzed. These characteristics are explained by the integration model in terms of avalanche threshold current based on the Haitz's equivalent circuit model. The reasoning results show that the maximum over-voltage for a normal operating silicon photomultiplier equals the product of the avalanche threshold current and the quenching resistor of the avalanche photo-diode (APD) pixel, approximately. Moreover, the model and results can be extended to other small avalanche junctions with quenching resistor.     

基于背向喇曼散射的分布式光纤温度传感器APD最佳雪崩增益的分析

本文分析了基于背向喇曼散射的分布式光纤温度传感器中光电接收用雪崩光电二极管雪崩增益对接收电路信噪比的影响,给出了使传感系统接收电路输出信号信噪比最大这一最佳意义下APD雪崩增益的表达式并进行了分析,实验结果和理论分析基本一致.     

An improved design for Al Ga N solar-blind avalanche photodiodes with enhanced avalanche ionization

To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode(APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al_(0.3)Ga_(0.7)N/Al_(0.45)Ga_(0.55)N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al_(0.3)Ga_(0.7)N which has about a six times higher hole ionization coefficient than the high-Al-content Al_(0.45)Ga_(0.55)N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.     

采集强干扰下微弱信号的APD电路系统研究

基于雪崩光电二极管反向偏压及其电容特性,利用时间同步原理,构建了一个用于回避强烈反射光信号,探测微弱回波信号的雪崩光电二极管探测系统.对雪崩光电二极管电容效应作出了分析,得出交流高压供电会使雪崩光电二极管产生干扰尖峰脉冲的结论.为了消除这个电容效应产生的尖峰干扰,提出了施加直流反向低压的方案,以达到减少雪崩光电二极管电容变化量的目的.通过实验数据验证了方法可行性.     

Temperature Effects of CsI(Tl) Crystal Detector with APD Readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/℃ in the region from －2℃ to 8℃, and by 0.33%/℃ in the region from 8℃ to 25℃, while the gain of the tested APD decreases by －3.68%/℃ (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV γ ray from ¹³⁷Cs radiation source.     

Performance comparisons between inverted and conventional avalanche photodiodes for larger capacity applications

Optical Review - In this paper, two types of avalanche photodiode (APD) are compared, namely, a P-down APD using an inverted structure and a P-up APD using a conventional structure. Comparison...