Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
Abstract:
We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength. In this method, the raw single photon avalanche signals are not attenuated, thus a high signal-to-noise ratio can be obtained compared with the existing results. The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10-4 at 213 K.