HfO2顶层多层介质膜脉宽压缩光栅的离子束刻蚀

多层介质膜光栅是高功率激光系统的关键光学元件. 为了满足国内强激光系统的迫切需求,首先利用考夫曼型离子束刻蚀机开展了HfO₂顶层多层介质膜脉宽压缩光栅的离子束刻蚀实验研究. 采用纯Ar及Ar和CHF₃混合气体作为工作气体进行离子束刻蚀实验,获得了优化的离子源工作参数. 结果表明,与纯Ar离子束刻蚀相比,Ar和CHF₃混合气体离子束刻蚀时的HfO₂/光刻胶的选择比大. HfO₂的离子束刻蚀过程中再沉积效应明显,导致刻蚀光栅占宽比变大. 根据刻蚀速率分布制作的掩模遮挡板可以提高刻蚀速率均匀性,及时清洗离子源和更换灯丝,可保证刻蚀工艺的重复性. 利用上述技术已成功研制出多块最大尺寸为80 mm×150 mm、线密度1480线/mm、平均衍射效率大于95%的HfO₂顶层多层介质膜脉宽压缩光栅. 实验结果与理论设计一致,为大口径多层介质膜脉宽压缩光栅的离子束刻蚀提供了有益参考. 关键词： 光栅 多层介质膜 离子束刻蚀     

离子源工艺参数对BCB胶刻蚀速率和表面粗糙度的影响

为了研究离子束刻蚀抛光过程中离子源工艺参数对刻蚀速率及表面粗糙度的影响,采用微波离子源为刻蚀离子源,以BCB胶为主要研究对象,研究了离子束能量、离子束电流、氩气流量、氧气流量对BCB胶刻蚀速率及表面粗糙度的影响,获得了离子源工艺参数与刻蚀速率及表面粗糙度演变的关系。研究结果表明,离子束能量在从400 eV增大到800 eV的过程中,刻蚀速率不断增大,从3.2 nm/min增大到16.6 nm/min;离子束流密度在从15 mA增大到35 mA的过程中,刻蚀速率不断增大,从1.1 nm/min增大到2.2 nm/min;工作气体中氧气流量从2 mL/min增大到10 mL/min的过程中,刻蚀速率会整体增大,在8 mL/min处略有下降。表面粗糙度变化不大,可以控制在1.8 nm以下。     

多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限

 在千焦拍瓦高功率放大系统设计中,激光脉冲的时空和光谱整形技术一直受到人们的广泛关注。利用反应离子束刻蚀等微纳超精细加工而成的多层电介质结构反射镜可在高功率条件下实现啁啾脉冲的光谱整形。在光谱整形介质结构反射镜的设计与制造中,需要根据要求的反射率来合理提出反应离子束刻蚀误差容限指标。推导出反应离子束刻蚀误差容限的解析表达式。针对神光Ⅱ千焦拍瓦高功率放大系统设计中提出的多层介质光谱调制反射镜,分析了调制结构反射镜各层加工的容许误差,确定了反应离子束刻蚀误差容限指标。研究表明：刻蚀高折射率介质的加工误差容限为35 nm;刻蚀低折射率介质的加工误差容限为62 nm。此外,还从使用需要和加工难易的角度,对刻蚀方案进行了讨论。就加工难易程度而言,优选反应离子束刻蚀方案,且采用刻蚀并残留低折射率介质的方案更容易实现。     

高温超导滤波器两种刻蚀方法的研究

在高温超导滤波器的制备过程中,针对所使用的高温超导薄膜的特点,采用了两种刻蚀方法——湿化学刻蚀法和离子束刻蚀法,设计对比了两种刻蚀的制作流程及其优缺点,并用两种方法分别制备了高温超导滤波器,对微波特性做了对比分析。得出离子束刻蚀对超导薄膜的性能影响要小一些,用此方法制备的高温超导滤波器具有更好的微波特性。     

离子束刻蚀技术研究

本文介绍了离子束刻蚀技术的原理,讨论了刻蚀速率与离子束流密度、离子能量和离子束入射角度的关系。实验结果与理论分析有较好的一致性。     

XUV成像系统中像传递函数研究用的Si刻蚀膜

 研制具有网格或条状图形的Si刻蚀膜靶，用于XUV系统中像传递函数的研究。在自截止腐蚀工艺制备Si平面薄膜的基础上，结合离子束刻蚀工艺，获得刻蚀深度为1.0 μm左右，网格尺寸为25 μm×25 μm，或条状线宽为5 μm的Si刻蚀膜；测量了Si刻蚀膜的形貌和刻蚀深度；研究了离子束刻蚀参数对图形形貌的影响。并介绍采用两种靶型获得的像传递函数信息。     

微透镜制作中光刻胶与衬底匹配行为的研究

利用光刻/离子束刻蚀制作大面阵硅微透镜阵列,采用SEM和表面探针测试等手段分析所制样品的形貌特点,定性讨论制备工艺的不同对所制器件的影响.所用工艺为大面阵微尖阵列和微合阵列的离子束刻蚀制作奠定了基础.     

氩离子束刻蚀YBCO薄膜

研究了氩离子束对 YBCO 薄膜和光刻胶掩膜的刻蚀速率,刻蚀了多种精细的图形,刻蚀后薄膜的 T_c 没有下降.通过测量 Ag 膜与 YBCO 膜的接触电阻,研究了离子束轰击后YBCO 膜表面的状况.     

矩底拱面状微透镜阵列的氩离子束刻蚀

在ＺｒＯ２、ＩｎＰ、Ｓｉ及ＳｉＯ２即融凝石英衬底上用氩离子束刻蚀制作面阵矩底拱面状微透镜阵列，给出了氩离子束在不同的入射角度下刻蚀器件的速率与离子束能量之间的关系。实验表明，用国产ＢＰ２１２紫外正型光刻胶制作的光致抗蚀剂掩膜图形在经过优化的工艺条件下可以通过氩离子束刻蚀将预定图形转移到衬底材料中。     

全息离子束刻蚀衍射光栅

全息离子束刻蚀衍射光栅集中了机械刻划光栅的高效率和全息光栅的无鬼线、低杂散光、高信噪比的优点．全息离子束刻蚀已作为常规工艺手段应用于真空紫外及软x射线衍射光栅的制作．文章对全息离子束刻蚀衍射光栅的制作方法、主要类型、研究现状和应用进行了综述．     

软X射线相位型聚焦波带片的研制

软X射线波带片是软X射线光学中聚焦、色散和成像的重要元件。以激光全息-离子束刻蚀技术制作金的振幅型软X射线聚焦波带片,以此为掩模,利用接触式同步辐射光刻和离子束刻蚀技术在聚酰亚胺衬底上,分别制作出了镍和锗的软X射线相位型聚焦波带片。     

Quantitative electron holography of biased semiconductor devices

Electron holography is used to measure electrostatic potential profiles across reverse-biased Si p-n junctions in situ in the transmission electron microscope. A novel sample geometry based on focused ion-beam milling is developed, and results are obtained for a range of sample thicknesses and bias voltages to allow the holographic contrast to be interpreted. The physical and electrical nature of the sample surface, which is affected by sample preparation and electron beam irradiation, is discussed.     

Ion etching of HgCdTe: Properties,patterns and use as a method for defect studies

Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes responsible for modification of these properties under the etching. Possibilities are discussed that ion etching opens for defect studies in HgCdTe, including detecting electrically neutral tellurium nanocomplexes, determining background donor concentration in the material of various origins, and understanding the mechanism of arsenic incorporation in molecular-beam epitaxy-grown films.     

The fabrication of aspherical microlenses using focused ion-beam techniques

Aspheric lenses are the most common method for correcting for spherical aberrations but, in microlens production, highly-controlled lens profiles are hard to achieve. We demonstrate a technique for creating bespoke, highly-accurate aspheric or spherical profile silicon microlens moulds, of almost any footprint, using focused ion-beam milling. Along with this, we present a method of removing induced ion-beam damage in silicon, via a hydrofluoric acid etch, helping to recover the surface's optical and chemical properties.In this paper, we demonstrate that our milled and etched moulds have a roughness of 4.0–4.1 nm, meaning they scatter less than 1% of light, down to wavelengths of 51 nm, showing that the moulds are suitable to make lenses that are able to handle light from UV up to infra-red.Using empirical experiments and computer simulations, we show that increasing the ion-dose when milling increases the amount of gallium a hydrofluoric acid etch can remove, by increasing the degree of amorphisation within the surface. For doses above 3000 μC/cm² this restores previous surface properties, reducing adhesion to the mould, allowing for a cleaner release and enabling higher quality lenses to be made.Our technique is used to make aspheric microlenses of down to 3 μm in size, but with a potential to make lenses smaller than 1 μm.     

On the reduction of nickel oxide

During the preparation of thin samples of nickel oxide by ion-beam milling, it has been found that preferential removal of oxygen can occur to such an extent that islands of nickel metal form on the surface. The nickel islands are found to be aligned topotacticly with the oxide and the results are compared with other studies of the early stages of the reduction of nickel oxide. The shape of the islands is explained in terms of misfit dislocations which can accommodate the strain; the growth of the islands occurs by generation and climb of the misfit dislocations.     

TEM study of locally coated nanopore fabricated by ion-beam-induced deposition in a thin membrane

We studied the formation of locally coated sub-10-nm nanopores fabricated by ion-beam milling and ion-beam-induced deposition (IBID) in a thin silicon nitride membrane. Two typical precursor gases representing conductive ((CH₃)₃Pt(CpCH₃), CPC for short) and insulating (tetra ethyl oxysilane, TEOS for short) material deposition are used. Three-dimensional electron tomography, EDX and EELS analysis are used to measure the changes in chemical composition and shape of the pores after their formation and at various stages of pore shrinkage. The formation and shrinkage are shown to be due to a shifting competition between IBID and material sputtering during ion-beam exposure. The chemical distribution at the rim of the nanopore is dependent on the precursor gases used: CPC forms a thin carbon layer with small embedded Pt particles at the top and inner surfaces of the nanopore, whereas TEOS forms SiO_xC_y with Ga particles dispersed at the rim of the nanopore.     

Determination of the reduction depth of tungsten oxide thin films under the effect of proton irradiation

This work is devoted to experimental determination of the limiting reduction depth of tungsten oxide to metal by the measurement of volumetric variations in a thin film of WO₃ under the effect of proton irradiation with an energy of 1.5 keV. The method of radiation-induced reduction of tungsten from WO₃ can be used for preparation of conducting structures in a dielectric matrix and obtaining an inorganic mask for carrying out different ion-beam processes. It is shown experimentally that the effect of a proton beam with an energy of 1.5 keV provides complete reduction of a tungsten oxide layer up to 138 nm thick. The experimental ratio of the thickness of the reduced layer to the thickness of the starting oxide film was 0.31. It is shown that the limiting reduction depth of tungsten oxide is determined by the path of protons in tungsten.     

纳米金属掩膜和离子辐照技术制备高温超导约瑟夫森结

研究了一种利用纳米金属掩膜和离子辐照技术在高温超导YBCO薄膜上制备Josephson结的方法.首先用在YBCO薄膜甩上一层800nm左右的光刻胶(PMMA),继而在光刻胶上用直流磁控溅射的方法镀上一层大约300nm左右的Cr膜,利用紫外曝光和离子刻蚀的方法在YBCO薄膜上形成覆盖有Cr膜的微桥,然后,利用聚焦离子束系统(FIB)在微桥上刻出一个50nm左右的狭缝,最后利用120keV的H2 对狭缝内的材料进行辐照,从而使狭缝部分的材料超导电性减弱,形成类似SNS型的Josephson结.     

Deformation of micron-sized aluminium bi-crystal pillars

The deformation of micron-sized single-crystals is jumpy and stochastic, and this may pose potential formability and reliability problems if components for future micro-machines are to be made from small metal volumes. In this work, micron-sized bi-crystal pillars were fabricated by focussed ion-beam milling from grain-boundary regions in coarse-grained polycrystalline aluminium. Each bi-crystal pillar contained a grain boundary intersecting its top surface, and was subjected to compression using a flat-ended nanoindenter tip. Their deformation was found to have smaller strain bursts, fewer periods of strain hardening at elastic-like rates, as well as greater work-hardening rate and flow stress, than single-crystal pillars of similar sizes. Transmission electron microscopy revealed severe dislocation accumulation in the deformed bi-crystal pillars, whereas the residual dislocation density remained low in single-crystal micro-pillars of similar dimensions after deformation to comparable strains. The results suggest that a grain boundary inside a micro-specimen can trap dislocations inside the specimen, leading to a significant rise in the strain-hardening rate as well as to smoother deformation.     

Determination of electric-field, magnetic-field, and electric-current distributions of infrared optical antennas: a near-field optical vector network analyzer

In addition to the electric field E(r), the associated magnetic field H(r) and current density J(r) characterize any electromagnetic device, providing insight into antenna coupling and mutual impedance. We demonstrate the optical analogue of the radio frequency vector network analyzer implemented in interferometric homodyne scattering-type scanning near-field optical microscopy for obtaining E(r), H(r), and J(r). The approach is generally applicable and demonstrated for the case of a linear coupled-dipole antenna in the midinfrared spectral region. The determination of the underlying 3D vector electric near-field distribution E(r) with nanometer spatial resolution and full phase and amplitude information is enabled by the design of probe tips with selectivity with respect to E(∥) and E(⊥) fabricated by focused ion-beam milling and nano-chemical-vapor-deposition methods.