YBCO-SrTiO_3-YBCO多层薄膜超导线圈

采用射频磁控溅射在(100)SrTiO_3衬底上生长了 YBCO-SrTiO_3-YBCO 多层薄膜,并结合氩离子束刻蚀技术加工了线条宽10μm 共9匝的多层结构超导线圈,研究了总长约9.4mm宽10μm YBCO 线条的超导连通及超导连接和超导线条绝缘跨接的情况.线圈超导连通 T_c为82K,在77K 的 J_c 为5.4×10~4Acm~(-2),SrTiO_3绝缘层在77K 的电阻率为3.9×10~3Ωcm,基本可以满足薄膜磁通变换器中多匝输入线圈的工艺要求.     

氩离子束刻蚀YBCO薄膜

研究了氩离子束对 YBCO 薄膜和光刻胶掩膜的刻蚀速率,刻蚀了多种精细的图形,刻蚀后薄膜的 T_c 没有下降.通过测量 Ag 膜与 YBCO 膜的接触电阻,研究了离子束轰击后YBCO 膜表面的状况.     

氩离子束减薄TlBaCaCuO多晶膜微桥

使用化学湿法刻蚀和氩离子束减薄技术制作了 TlBaCaCuO 薄膜的厚差桥,研究了桥区膜厚和临界电流的变化,发现离子束减薄对薄膜的 J_c 没有明显影响.使用这种技术调整 DCSQUID 的临界电流,在77K 观察到了量子干涉现象.     

交流偏置的高T_cdcSQUID的1／f噪声

我们把交流偏置反转技术应用于ｄｃＳＱＵＩＤｓ，观察了各级波形，测出了在交流偏置和直流偏置两种情况下ＹＢＣＯ双品结ｄｃＳＱＵＩＤｓ磁通噪声功率谱密度曲线．交流偏置使１／ｆ噪声显著降低，在ＳＨｚ下的磁通噪声功率谱密度由１×１０－６Φ２０／Ｈｚ降到了３×１０－８Φ２０／Ｈｚ．     

YBaCuO BICRYSTAL JUNCTIONS AND DC SUPERCONDUCTING QUANTUM INTERFERENCE DEVICES

We have prepared yttria-stabilized-zirconia bicrystal substrates using a simple hot-pressing method. The grain-boundary junctions have been fabricated with YBa₂Cu₃O₇ thin films grown epitaxially on the bicrystals. The patterns are defined by conventional photolithography, The dc and microwave characteristics of the junctiorts and the dc superconducting quantum interference devices (SQUIDs) have been intensively studied. The current-voltage curves are bridge-typed with noise rounding near the critical current. Resistive tail has been observed in the resistance versus temperature curves. The results are compared with the theoretical prediction for classical Josephson junctions. It is found that the behavior of bicrystal junctions can be described in the frame of classical theory. The deviations are attributed to the nonuniformity of the junctions. The small loop dc SQUIDs demonstrate diffraction and interference effects with regard to the applied magnetic field. A large square-washer with a new configuration has been designed to enhance the effective area of dc SQUID as a magnetometer. It has achieved a magnetic field resolution down to 1 pT/(Hz)^1/2(at 10Hz) at 77K.