单体光交联制备液晶垂直取向膜

提出光敏单体紫外光聚合制备液晶垂直取向膜的方法，并在实验中证实了方法的可行性.实验中采用六氟双酚A双肉桂酸酯单体，在紫外光作用下单体发生光交联反应，形成的聚合膜能够诱导液晶分子垂直排列.制备过程简单，不需要高温热处理过程.从紫外吸收光谱和红外吸收光谱分析发现，单体具有较好的光敏性和聚合度.取向膜经过120℃高温处理仍然具有良好的取向性质. 关键词： 光敏单体 光交联 液晶 垂直取向膜 六氟双酚A双肉桂酸酯     

Y型Langmuir-Blodgett膜中分子聚集行为的偶极作用模型

利用经典静电场理论，描述了Y型Langmuir-Blodgett (LB) 膜中棒状分子聚集行为的偶极作用模型，给出了Y型LB膜结构与光谱性质的关系.讨论了Y型膜中分子间距、层间距、分子取向、膜层数等结构参数对分子聚集行为的影响，并在此基础上比较了Y型膜和Z型膜分子聚集行为的异同.理论结果与实验规律符合较好.     

硫醇自组装分子膜末端基团对其电荷输运特性的影响

在金(111)表面组装了具有不同末端基团的硫醇单层分子膜，并利用导电原子力显微镜研究了分子膜的电输运性质，发现不同末端基团的分子自组装膜的导电能力有明显差别.结合X射线光电子能谱，研究了末端基团中碳原子的结合能与相应硫醇分子电导的关系.结果表明不同末端基团分子膜导电能力的差别可归结为末端基团碳原子电子结合能的差异.结合能越高，末端基团电子的局域化程度越强，导致电子有效注入分子主链的势垒越高，从而减弱了分子膜对电子的输运能力.此外，实验还发现不同末端基团的硫醇单层分子膜有不同的表面电势，导致分子膜电流电压特性曲线的零点产生偏离. 关键词： 分子自组装膜 输运特性 末端基团 导电原子力显微镜     

Langmuir-Blodgett 膜中分子聚集行为的偶极作用模型

基于经典静电场理论，描述了Langmuir-Blodgett (LB)膜中棒状分子聚集行为的偶极作用模型，给出了LB膜结构与光谱性质的关系. 讨论了X型或Z型膜中分子间距、层间距、分子取向、膜层数等结构参数对分子聚集行为的影响. 理论结果与实验值符合较好. 关键词： Langmuir-Blodgett膜 聚集体 偶极相互作用 半花菁     

Cu(100)表面CO分子单层膜的原子结构

利用第一性原理研究了覆盖度分别为1.00, 0.50和0.25 ML时CO分子单层膜在Cu(100)表面的吸附系统. 计算表明CO分子对不稳定. 获得了CO分子单层膜在虚拟Cu(100)表面的原子结构, 以及CO分子单层膜在Cu(100)表面吸附系统的原子结构. 当CO分子单层膜在Cu(100)表面的三个吸附位吸附, 覆盖度为1.00 ML时, 顶位和桥位都稳定, 而空心位不稳定; 覆盖度为0.50和0.25 ML时, 三个吸附位都稳定.比较吸附前后CO分子单层膜的原子结构, 可知CO分子和Cu(100)表面的相互作用强于CO分子单层膜之间的相互作用. 关键词： CO分子单层膜 自组装 CASTEP Cu(100)     

固-液界面可聚合脂多层膜的Ｘ射线散射研究

报道在北京同步辐射装置上有关固-液界面的研究结果,在漫散射站成功实现了固-液界面的X射线散射测量.将二乙炔酸的异丙醇溶液滴在硅基底表面,溶剂挥发后形成晶态二乙炔酸多层膜.X射线在位观测实验表明,和水长时间接触后,水分子渗透到多层膜亲水界面,样品呈液晶态.在大尺度上分子膜的热起伏符合液晶的线性弹性理论模型,但小尺度上分子的位移主要由缺陷引起.光照聚全后分子膜的弯曲模量变大,缺陷引发的分子位移范围也增大.     

Rh(111)表面NO分子对多层膜的原子结构

利用第一性原理研究了NO分子对[(NO)_2]分子链、分子单层膜,Rh(111)表面上的(NO)_2分子单层膜和多层膜的原子结构.(NO)_2分子单体在虚拟Rh(111)表面自组装成两个稳定的分子链,(NO)_2分子平行有序排列,氧原子和氮原子都呈现(100)和(111)结构.在虚拟Rh(111)-(1×3~(1/2))上,1.00 ML(molecular layer)覆盖度时,(NO)_2分子自组装成两个稳定的分子单层膜(M1和M2),分子膜M1中N-N键与衬底的夹角为70°-90°;分子膜M2中N-N键平行衬底.在M2/Rh(111)中,(NO)_2分子可吸附于顶位、fcc空心位和hcp空心位,通过电荷转移可解释两个空心位的稳定性强于顶位.Rh(111)表面(NO)_2分子多层膜系统中,(NO)_2分子垂直吸附于两个空心位,第一层是分子膜M2,N-N键平行于衬底,第二层及以上都是分子膜M1,N-N键与衬底夹角为70°-90°,分子膜真空层为0.31 nm±0.02 nm.     

氰基团修饰的苯腙类有机分子掺杂极化聚合膜光学非线性的研究

采用实时测量光学二次谐波产生（ＳＨＧ）和吸收光谱的方法对苯腙类有机分子ＮＤＡ及一种新合成的经氰基团修饰的有机分子ＣＮＤＡ掺杂ＰＭＭＡ极化聚合膜的非线性光学性质进行了研究。实验中发现两种掺杂极化聚合膜的最佳电晕极化温度均低于它们的玻转温度,ＣＮＤＡ／ＰＭ－ＭＡ极化掺杂聚合膜的χ（２）较ＮＤＡ／ＰＭＭＡ极化聚合膜的大。结合极化前和极化后吸收峰强度的变化,得到ＣＮＤＡ分子的非线性极化率β约为１４６×１０－３０ｅｓｕ。在撤离极化场后,ＣＮＤＡ／ＰＭＭＡ的二次谐波强度的弛豫也比ＮＤＡ／ＰＭＭＡ的慢     

有机分子多层LB膜中聚集体理论和实验研究H

文中采用经典偶极相互作用模型讨论了多层Z型LB膜中分子聚集体的类型 ,给出了分子偶极相互作用能的表达式;并对理论结果与紫外可见吸收光谱的实验值进行了比较,理论结果和实验值符合较好.     

卵黄鞘磷脂与DOPC相互作用的单层膜

通过分析单层膜在固定表面压力下的过量分子面积和固定分子面积时的过量表面压力研究了卵黄鞘磷脂和1,2-二油酸基磷脂酰胆碱在单层膜中的混合性行为,通过分析过量吉布斯能量、过量亥姆霍兹能量和弹性系数评估了混合脂单层膜稳定性和压缩性. 热力学分析表明,相对于两组分理想混合时过量分子面积和过量表面压力呈现出正偏差,表明分子间的相互作用力为排斥力. 能量极值点出现在卵黄鞘磷脂含量为0.6处,表明该比例下单层膜结构状态不稳定. 排斥力诱导了单层膜中产生相分离.     

Structural characterization of Ga-doped Mg0.1Zn0.9O layers grown on ZnO/α-Al2O3 templates by P-MBE

In this study, structural properties of epitaxial Ga-doped Mg_0.1Zn_0.9O layers grown on ZnO/α-Al₂O₃ templates by plasma-assisted molecular beam epitaxy have been investigated by high-resolution transmission electron microscopy (HRTEM), and high resolution X-ray diffraction (HRXRD). From analysis of the diffraction pattern, the monocrystallinity of the Mg_0.1Zn_0.9O layer with hexagonal structure is confirmed. The orientation relationship between Mg_0.1Zn_0.9O and the template is determined as (0 0 0 1)_Mg0.1Zn0.9O(0 0 0 1)_ZnO(0 0 0 1)_Al2O3 and [ [ ]_ZnO[ . The density of dislocations near the top surface layers measured by plan-view TEM is about 3.610¹⁰ cm⁻², one order of magnitude higher than the value obtained for ZnO layers on α-Al₂O₃ with a MgO buffer. Cross-sectional observation revealed that the majority of threading dislocations are in the [0 0 0 1] line direction, i.e. they lie along the surface normal and consist of edge, screw, and mixed dislocations. Cross- sectional TEM and X-ray rocking curve experiments reveal that most of dislocations are edge dislocations. The interface of Mg_0.1Zn_0.9O and ZnO layers and the effect of excess Ga-doping in these layers have been also studied.     

Structural characterization of ultrathin Cr and Sc films for soft X-ray mirrors

The structure of multilayers of ultrathin scandium (Sc) and chromium (Cr) films has been characterized by means of transmission electron microscopy (TEM). Face centered cubic Sc was found both in magnetron sputtered thin Sc layers on Si(0 0 1) and in Cr/Sc multilayers for soft X-ray mirrors. The single Sc and Cr layers are polycrystalline with randomly oriented grains, while Sc and Cr within the Cr/Sc multilayer show a strong [0 0 1] texture in the deposition direction. From high-resolution images the orientation-relationship at the Cr/Sc interfaces could be deduced as: Sc_[110]//Cr_[100] and Sc_[010]//Cr_[110], which was confirmed by image simulations.     

MO／PVA薄膜材料在Ar^＋激光488.0nm线预辐照下的红光多重全息存贮

报道了甲基橙偶氮染料掺杂的聚乙烯醇薄膜材料在Ａｒ＾＋激光４８８．０ｎｍ线辐照下，用正交线偏振的６３２．８ｎｍ光作为写入光，通过旋转样品，在同一光斑内形成多个取向不同的相位光栅，实现了多重全息存贮的实验结果。在三重图象的存贮中，通过控制每次的写入时间、得到了三个均匀明亮的衍射图像，其平均衍射效率为０．１％。     

Migration-enhanced epitaxy (MEE) growth of five-layer asymmetric coupled quantum well (FACQW) and its cross-sectional STM observation

The five-layer asymmetric coupled quantum well (FACQW) is a new potential-tailored quantum well that is promising for ultra-fast and ultra-low-voltage optical modulators and switches. FACQW samples were grown by the migration-enhanced epitaxy (MEE) and the conventional molecular beam epitaxy methods with steep and flat heterointerfaces in the monolayer accuracy. They were characterized with the cross-sectional scanning tunneling microscopy (STM). In the cross-sectional STM image, double-stripe structures with different contrast were observed. The stripe area corresponds to the FACQW (about 10 nm wide), sandwiched with the AlGaAs barrier layers (15 nm wide). A dark line observed at the middle of the FACQW stripe area corresponds to the 3-monolayer-thick AlAs layer. The cross-sectional STM images of the high-quality heterointerface FACQW structures were successfully observed for the samples grown by the MEE method. More detailed studies of this kind of cross-sectional STM observations will be very effective to obtain the optimized growth conditions for fine and complicated ultra-thin structures.     

Atomic layer epitaxy of AlP and (AlP)n(GaP)n superlattice using ethyldimethylamine alane as a new aluminum source

Atomic layer epitaxy (ALE) of AlP was realized using ethyldimethylamine alane (EDMAAl) as a new Al source. Self-limiting growth of AlP took place at one and two monolayers per ALE cycle. Secondary ion mass spectroscopy revealed that the amounts of incorporated impurities (carbon, hydrogen and oxygen) in ALE-grown AlP layers was greatly suppressed by using the new Al source, to nearly the same levels as in high-quality MOVPE-grown layers. We also achieved the successful ALE growth of (AlP)_n(GaP)_n short-period superlattices (SLs), taking advantage of the overlapping temperature windows of ALE-GaP and ALE-AlP. X-ray diffraction measurements showed reasonably good interface abruptness of SLs as low as 3. The PL emission peak from SLs involving Al-containing layers was observed in ALE growth for the first time.     

温度对p-InN薄膜光电导灵敏度的影响

研究了p型InN的光电导效应。利用分子束外延技术(MBE)法生长出高质量的InN薄膜,在此基础上利用Mg掺杂获得了p-InN。原位反射高能电子衍射(RHEED)表明样品在生长过程中保持二维生长模式,原子力显微镜(AFM)测试结果显示台阶流的生长模式。实验发现,p型InN的光电导灵敏度随温度的升高而降低。其主要原因是当温度升高时,光生载流子浓度降低和样品背景浓度升高共同造成的。     

Structure and Stability of PEG‐ and Mixed PEG‐Layer‐Coated Nanoparticles at High Particle Concentrations Studied In Situ by Small‐Angle X‐Ray Scattering

Ligand‐layer structure and stability of gold nanoparticles (AuNP) coated with α‐methoxypoly(ethylene glycol)‐ω‐(11‐mercaptoundecanoate) (PEGMUA) layers and mixed layers of PEGMUA and 11‐mercaptoundecanoic acid (MUA) at high AuNP concentrations are studied in situ by small‐angle X‐ray scattering (SAXS). The thickness of the ligand layer is modified by the molecular weight of the PEG‐ligands (2 and 5 kDa), and the PEG‐grafting density is decreased by coadsorption of MUA. The response of the conjugates to a pressure of up to 4 kbar is probed. The results indicate strongly hydrated PEG layers at high grafting densities. The stability of the mixed ligand‐layer conjugates is lower. This is most probably due to enhanced interparticle PEG–PEG interactions at lower grafting densities. The presented study demonstrates that a detailed structural characterization of polymer ligand layers in situ and in response to external stimuli is possible with SAXS.     

双层堆垛长波长InAs/GaAs量子点发光性质研究

研究了双层堆垛InAs/GaAs/InAs自组织量子点的生长和光致发光(PL)的物理性质。通过优化InAs淀积量、中间GaAs层厚度以及InAs量子点生长温度等生长条件,获得了室温光致发光1391～1438nm的高质量InAs量子点。研究发现对量子点GaAs间隔层实施原位退火、采用Sb辅助生长InGaAs盖层等方法可以增强高密度(2×1010 cm-2)InAs量子点的发光强度,减小光谱线宽,改善均匀性和红移发光波长。     

Influence of the thickness of matching layers on narrow band transmitter ultrasonic airborne transducers with frequencies <100 kHz: Application of a genetic algorithm

The acoustic impedances of matching layers and their thicknesses are the most important and influential parameters in the performance of airborne ultrasonic transducers. In this paper, the optimum thicknesses of the matching layers of the narrow band transmitter ultrasonic transducer regarding transmission coefficient were determined by individual calculations using a genetic algorithm. The genetic algorithm was chosen because it is a powerful tool in the optimization domain. The results show that the permitted thickness variation is 0.0005% for one matching layer, and this value can be increased to 0.0031%, which corresponds to the permitted thickness variation for five matching layers. Approximately 55% enhancement in the transmission coefficient is theoretically possible, and 42% enhancement was observed experimentally when the genetic algorithm was applied to calculate the matching layer thicknesses in place of the quarter wavelength equation that is conventionally used for the determination of layer thickness. To verify our approach, the effect of the thickness variation on the transmission coefficient has been investigated experimentally for three, four and five matching layers. The experimental results displayed good agreement with the theoretical predictions.     

Bi4-xLax Ti3O12-SrBi4-y Lay Ti4O15共生结构铁电材料拉曼光谱研究

在常温下 ,对La掺杂共生结构铁电陶瓷Bi4 -xLaxTi3O1 2 _SrBi4 -yLayTi4 O1 5[BLT_SBLT(x y) ,x y =0 0 0 ,0 2 5 ,0 5 0 ,0 75 ,1 0 0 ,1 2 5 ,1 5 0 ]进行了拉曼光谱研究 .结果表明 ,在掺杂量低于 0 5 0时 ,La只取代类钙钛矿层中的Bi,当掺杂量高于 0 5 0后 ,部分La开始进入 (Bi2 O2 ) 2 层 .La取代 (Bi2 O2 ) 2 层中的部分Bi以后 ,(Bi2 O2 ) 2 层结构发生变化 ,原有的绝缘层和空间电荷库的作用减弱 ,导致材料剩余极化下降 .La掺杂量增至 1 5 0时 ,样品出现弛豫铁电性 ,这与 30cm- 1 以下模的软化相对应 ,说明La掺杂可引起材料的结构相变