Determination of acoustic impedances of multi matching layers for narrowband ultrasonic airborne transducers at frequencies <2.5 MHz - Application of a genetic algorithm

The effective ultrasonic energy radiation into the air of piezoelectric transducers requires using multilayer matching systems with accurately selected acoustic impedances and the thickness of particular layers. One major problem of ultrasonic transducers, radiating acoustic energy into air, is to find the proper acoustic impedances of one or more matching layers. This work aims at developing an original solution to the acoustic impedance mismatch between transducer and air. If the acoustic impedance defences between transducer and air be more, then finding best matching layer(s) is harder. Therefore we consider PZT (lead zirconate titanate piezo electric) transducer and air that has huge acoustic impedance deference. The vibration source energy (PZT), which is used to generate the incident wave, consumes a part of the mechanical energy and converts it to an electrical one in theoretical calculation. After calculating matching layers, we consider the energy source as layer to design a transducer. However, this part of the mechanical energy will be neglected during the mathematical work. This approximation is correct only if the transducer is open-circuit. Since the possibilities of choosing material with required acoustic impedance are limited (the counted values cannot always be realized and applied in practice) it is necessary to correct the differences between theoretical values and the possibilities of practical application of given acoustic impedances. Such a correction can be done by manipulating other parameters of matching layers (e.g. by changing their thickness). The efficiency of the energy transmission from the piezoceramic transducer through different layers with different thickness and different attenuation enabling a compensation of non-ideal real values by changing their thickness was computer analyzed (base on genetic algorithm). Firstly, three theoretical solutions were investigated. Namely, Chebyshev, Desilets and Souquet theories. However, the obtained acoustic impedances do not necessarily correspond to a nowadays available material. Consequently, the values of the acoustic impedances are switched to the nearest values in a large material database. The switched values of the acoustic impedances do not generally give efficient transmission coefficients. Therefore, we proposed, in a second step, the use of a genetic algorithm (GA) to select the best acoustic impedances for matching layers from the material database for a narrow band ultrasonic transducer that work at frequency below the 2.5 MHz by considering attenuation. However this bank is rich, the results get better. So the accuracy of the propose method increase by using a lot of materials with exact data for acoustic impedance and their attenuation, especially in high frequency. This yields highly more efficient transmission coefficient. In fact by using increasing number of layer we can increase our chance to find the best sets of materials with valuable both in acoustic impedance and low attenuation. Precisely, the transmission coefficient is almost equal to unity for the all studied cases. Finally the effect of thickness on transmission coefficient is investigated for different layers. The results showed that the transmission coefficient for air media is a function of thickness and sensitive to it even for small variation in thickness. In fact, the sensitivity increases when the differences of acoustic impedances to be high (difference between PZT and air).     

Vibration amplitude and induced temperature limitation of high power air-borne ultrasonic transducers

The acoustic impedances of matching layers, their internal loss and vibration amplitude are the most important and influential parameters in the performance of high power airborne ultrasonic transducers. In this paper, the optimum acoustic impedances of the transducer matching layers were determined by using a genetic algorithm, the powerful tool for optimizating domain. The analytical results showed that the vibration amplitude increases significantly for low acoustic impedance matching layers. This enhancement is maximum and approximately 200 times higher for the last matching layer where it has the same interface with the air than the vibration amplitude of the source, lead zirconate titanate-pizo electric while transferring the 1 kW is desirable. This large amplitude increases both mechanical failure and temperature of the matching layers due to the internal loss of the matching layers. It has analytically shown that the temperature in last matching layer with having the maximum vibration amplitude is high enough to melt or burn the matching layers. To verify suggested approach, the effect of the amplitude of vibration on the induced temperature has been investigated experimentally. The experimental results displayed good agreement with the theoretical predictions.     

超声相控阵在多层媒质中的声场模式优化

针对超声在多层媒质中的传播特性,引入相位补偿因子并结合遗传算法, 提出了一种可对多层媒质进行声聚焦控制的方法.利用该方法对16×16二维超声相控阵在多层生物媒质中的多焦点声场模式进行了仿真,计算了生物媒质不同厚度层和不同吸收系数时的声场. 结果表明:该方法能优化多焦点声场模式,抑制旁瓣,提高声场增益,将声强最大限度地聚焦在目标区域内; 改变生物组织不同层的厚度和不同层的吸收系数,焦点位置不发生变化,但焦域内的声强会有所变化.     

Influence of the thickness of multilayer matching systems on the transfer function of ultrasonic airborne transducer

The effective ultrasonic energy radiation into the air of piezoelectric transducers requires using multilayer matching systems with accurately selected acoustic impedances and the thickness of particular layers. This problem is of particular importance in the case of ultrasonic transducers working at a frequency above 1 MHz. Because the possibilities of choosing material with required acoustic impedance are limited (the counted values cannot always be realised and applied in practice) it is necessary to correct the differences between theoretical values and the possibilities of practical application of given acoustic impedances. Such a correction can be done by manipulating other parameters of matching layers (e.g. by changing their thickness). The efficiency of the energy transmission from the piezoceramic transducer through different layers with different thickness enabling a compensation of non-ideal real values by changing their thickness was computer analysed. The result of this analysis is the conclusion that from the technological point of view a layer with defined thickness is easier and faster to produce than elaboration of a new material with required acoustic parameter.     

厚度模压电超声换能器无源声学材料研究进展*

厚度模压电超声换能器作为超声波发射、接收以及电信号间转换的载体,是超声成像与检测系统的核心器件,一般由压电层、匹配层和背衬层3部分组成。超声换能器的性能一定程度上决定着整体超声设备的性能,影响了其在工业、医学、军事等领域的应用。该换能器的关键性能指标(带宽、灵敏度)除了受到压电层的影响,还与匹配层、背衬层等无源声学材料的设计密切相关。该文综述了近年来厚度模压电超声换能器无源声学材料(匹配层、背衬层和声透镜)的研究进展,提出了当前该类材料面临的难题和解决途径,并对其未来发展方向进行了展望。     

Influence of acoustic impedance of multilayer acoustic systems on the transfer function of ultrasonic airborne transducers

In different solutions of ultrasonic transducers radiating acoustic energy into the air there occurs the problem of the proper selection of the acoustic impedance of one or more matching layers. The goal of this work was a computer analysis of the influence of acoustic impedance on the transfer function of piezoceramic transducers equipped with matching layers. Cases of resonance and non-resonance matching impedance in relation to the transfer function and the energy transmission coefficient for solid state-air systems were analysed. With stable thickness of matching layers the required shape of the transfer function can be obtained through proper choice of acoustic impedance were built (e.g. maximal flat function). The proper choice of acoustic impedance requires an elaboration of precise methods of synthesis of matching systems. Using the known matching criteria (Chebyshev's, DeSilets', Souquet's), the transfer function characteristics of transducers equipped with one, two, and three matching layers as well as the optimisation methods of the energy transmission coefficient were presented. The influence of the backside load of the transducer on the shape of transfer function was also analysed. The calculation results of this function for different loads of the transducer backside without and with the different matching layers were presented. The proper load selection allows us to obtain the desired shape of the transfer function, which determines the pulse shape generated by the transducer.     

Absorption properties of carbonyl-iron/carbon black double-layer microwave absorbers

Double-layer materials were devised in order to improve the absorbing properties of electromagnetic wave absorbing plates. The double-layer wave absorbing materials are composed of a matching layer and an absorption layer. The matching layer is the surface layer through which most of the incident waves can enter, and the absorption layer beneath it plays an important role in incident wave attenuation. The total thickness of the double layer is the sum of the thicknesses of these two layers. Carbonyl iron (CI) and carbon black (CB) were used as absorbents in the matching and absorption layers, respectively. The structures of the CI and CB particles were analyzed using scanning electron microscopy and transmission electron microscopy; the dielectric properties and absorption mechanisms were also studied. In the testing frequency range 2-18 GHz, the results show that the double-layer absorbers have two absorption peaks, and the positions and values of these peaks change with the content level of the absorbents. When the mass fraction of CI in the matching layer is 50% and the total thickness of the absorber is 4 mm, the effective absorption band (below −8 dB) reaches 5.5, 5.8, and 6.5 GHz. Where the mass fraction of CB is 50% or 60% and the mass fraction of CI is 70%, the bandwidth with reflection loss below −4 dB is larger than 10 GHz.     

Tunable Pair Transmission in One-Dimensional Photonic Crystals Consisting of Single-Negative Materials

We study the transmission of one-dimensional photonic crystals consisting of single-negative permittivity and single-negative permeability media by using transfer matrix method. A pair of transmission modes is found in the gap. The transmission modes are dependent only on the ratio of the thicknesses of the two alternating layers. The separation of a pair of transmission modes can be tuned by varying the thickness of the defect layer or the ratio of thicknesses of the two alternating layers.     

The oscillatory galvanomagnetic size-effect in multilayered structures

Within the framework of the modified semi-classical Fuchs-Sondheimer model, we investigated theoretically the electrical resistivity of multilayered structures (MLS) consisting of alternating metallic layers (of different purity and different thicknesses) in a transverse magnetic field as functions of the ratio of the adjacent layer thicknesses and the magnetic field value. We have derived both a general formula (valid at arbitrary values of layer thicknesses) and asymptotic expressions that are valid when metallic layers are thick or thin compared with the electron mean free path. We found a non-monotonic behavior in the resistivity vs. the value of an applied magnetic field. As we demonstrated, this behavior is sensitive to the characteristics of the electron scattering in the interlayer interfaces in low magnetic fields. Moreover, the MLS resistivity oscillates in high magnetic fields with the field value (or with the layer thicknesses). The oscillation includes the harmonics that correspond both to the each layer thicknesses and the total thickness. The intensity of the oscillation is determined by the diffusive electron scattering in the interfaces, and the oscillation amplitude is proportional to the coefficient of the electron transmission through the interlayer interfaces. We have calculated numerically the resistivity in a wide range of fields and layer thicknesses at various values of the parameters of the interface and bulk electron scattering.      

Frequency selective surface with a flat topped passband

Two frequency selective surface (FSS) configurations with flat topped passband are presented in this paper.One configuration is single layer FSS with λ/4 thickness dielectric loaded on both sides, and the other is double layers FSS. Based on the modal matching method, the frequency response properties including angle effect and polarization effect of both FSS configurations are analyzed, and the plots of the frequency versus transmission coefficient are obtained for different incident angles and polarizations. It is shown that the structure with the single layer FSS embedded centrally in the λ/2 thickness dielectric has a wider flat top bandwidth of 6.8 GHz than that of the double layers FSS of 3 GHz. In addition, the fabrication of single layer is relatively easier than the double layers FSS.     

Second harmonic generation in nanoscale films of transition metal chalcogenides: Taking into account multibeam interference

Second harmonic generation is studied in structures containing nanoscale layers of transition metal chalcogenides that are two-dimensional semiconductors and deposited on a SiO₂/Si substrate. The second harmonic generation intensity is calculated with allowance for multibeam interference in layers of dichalcogenide and silicon oxide. The coefficient of reflection from the SiO₂-layer-based Fabry–Perot cavity is subsequently calculated for pump wave fields initiating nonlinear polarization at every point of dichalcogenide, which is followed by integration of all second harmonic waves generated by this polarization. Calculated second harmonic intensities are presented as functions of dichalcogenide and silicon oxide layer thicknesses. The dependence of the second harmonic intensity on the MoS₂ layer thickness is studied experimentally in the layer of 2–140 nm. A good coincidence of the experimental data and numerical simulation results has been obtained.     

Evaluation of electrical and optical characteristics of ZnO/CdS/CIS thin film solar cell

In this study, device modeling and simulation are conducted to explain the effects of each layer thickness and temperature on the performance of ZnO/CdS/CIS thin film solar cells. Also, the thicknesses of the CIS and CdS absorber layers are considered in this work theoretically and experimentally. The calculations of solar cell performances are based on the solutions of the well-known three coupling equations: the continuity equation for holes and electrons and the Poisson equation. Our simulated results show that the efficiency increases by reducing the CdS thickness. Increasing the CIS thickness can increase the efficiency but it needs more materials. The efficiency is more than 19% for a CIS layer with a thickness of 2 μm. CIS nanoparticles are prepared via the polyol route and purified through centrifugation and precipitation processes.Then nanoparticles are dispersed to obtain stable inks that could be directly used for thin-film deposition via spin coating.We also obtain x-ray diffraction(XRD) peak intensities and absorption spectra for CIS experimentally. Finally, absorption spectra for the CdS window layer in several deposition times are investigated experimentally.     

Crystallization of amorphous SiC and superhardness effect in TiN/SiC nanomultilayers

TiN/SiC nanomultilayers with various constituent layer thicknesses were prepared by magnetron sputtering using TiN and SiC ceramic targets. X-ray diffractometer, scanning electron microscope, energy dispersive spectrometer, high-resolution transmission electron microscope, atomic force microscope and nanoindenter were employed to study the growth, microstructure and mechanical properties of these films. Experimental results revealed that amorphous SiC, which is more favorable under normal sputtering conditions, was forced to crystallize and grew epitaxially with TiN layers at thicknesses of less than 0.8 nm. The resultant films were found to form strong columnar structures, accompanied with a remarkable hardness increment. Maximal nanoindentation hardness as high as 60.6 GPa was achieved when SiC thickness was ∼0.6 nm. A further increase of SiC thickness caused the formation of amorphous SiC, which blocked the epitaxial growth of the multilayers, resulting in the decline of film's hardness. Additionally, investigations on multilayers different in TiN layer thicknesses showed that they are insensitive in both microstructure and hardness to the fluctuation of TiN layer thickness. The formation of epitaxially grown structure between crystalline SiC and TiN layers was found to be responsible for the obtained superhardness in multilayers.     

Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

A transmission-mode GaAs photocathode includes four layers of glass,Si 3 N 4 ,Ga 1x Al x As and GaAs. A gradient-doping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spec-trophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. In addition,a fitting coefficient needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are gained corresponding to the minimum relative error,meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 7%. The presence of glass layer roughness,layer interface effects and surface oxides is interpreted on the modification.     

The detection of thin embedded layers using normal incidence ultrasound

A theoretical investigation of the use of normal incidence ultrasonic reflection measurements for the detection and characterization of thin layers embedded between two much thicker media has been carried out. It has been shown that the form of the relationship between the normal incidence longitudinal reflection coefficient and frequency is defined by the reflection coefficients at zero frequency and at half the resonance frequency of the layer. The reflection coefficient at zero frequency is solely a function of the impedances of the media on either side of the layer, while that at half the resonance frequency of the layer is a function of the impedances of all three media. In general, the sensitivity of the reflection coefficient to the presence of the layer increases as the product of frequency and layer thickness increases, the maximum sensitivity being at half the resonance frequency of the layer. Unfortunately, with thin layers, it is generally not practical to test at this frequency. However, the reflection coefficient curve can, in principle, be reconstructed from data measured at lower frequencies and the sensitivity of the reflection coefficient at lower frequencies to the characteristics of the layer can be predicted from the sensitivity at half the resonance frequency. The sensitivity is also critically dependent on the relative impedances of the three media and is generally greatest when the half spaces on either side of the layer have the same impedance. With favourable impedances, it is possible to detect layers whose thickness is a small fraction of the wavelength of the ultrasonic waves employed. However, with other combinations of impedances, the detection of much thicker layers is not possible.     

Vibration analysis and design optimization of viscoelastic sandwich cylindrical shell

Damping properties of viscoelastic sandwich structure can be improved by changing some parameters such as thickness of the layers, distribution of partial treatments, slippage between layers at the interfaces, cutting and its distribution at the top and core layers. Since the optimization problem may result in a thick core layer, for achieving more accuracy a new higher-order Taylor's expansion of transverse and in-plane displacement fields is developed for the core layer of sandwich cylindrical shell in which the displacement fields at the core layer are compatibly described in terms of the displacement fields at the elastic faces. The presented model includes fewer parameters than the previously developed models and therefore decreases the number of degree of freedom in the finite element modeling. The transverse normal stress in the core layer is also considered. The formulations are developed to consider the slippage between layers at the interfaces. Finally, by combining the finite element method and the optimization algorithms based on the genetic algorithm and sequential quadratic programming technique, a design optimization methodology has been formulated to maximize the damping characteristics using the optimal number and location of cuts and partial treatments with optimal thicknesses of top and core layers.     

Modelling of a novel high-impedance matching layer for high frequency (>30 MHz) ultrasonic transducers

This work describes a new approach to impedance matching for ultrasonic transducers. A single matching layer with high acoustic impedance of 16 MRayls is demonstrated to show a bandwidth of around 70%, compared with conventional single matching layer designs of around 50%. Although as a consequence of this improvement in bandwidth, there is a loss in sensitivity, this is found to be similar to an equivalent double matching layer design. Designs are calculated by using the KLM model and are then verified by FEA simulation, with very good agreement Considering the fabrication difficulties encountered in creating a high-frequency double matched design due to the requirement for materials with specific acoustic impedances, the need to accurately control the thickness of layers, and the relatively narrow bandwidths available for conventional single matched designs, the new approach shows advantages in that alternative (and perhaps more practical) materials become available, and offers a bandwidth close to that of a double layer design with the simplicity of a single layer design. The disadvantage is a trade-off in sensitivity. A typical example of a piezoceramic transducer matched to water can give a 70% fractional bandwidth (comparable to an ideal double matched design of 72%) with a 3 dB penalty in insertion loss.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Determination of Tungsten Layer Profiles in Bilayer Structures Using X-Ray Reflectivity Method

An effectual method is presented to determine the profiles of a tungsten （W） layer, such as the density, the thickness and the roughness in the multilayer structures, using the x-ray reflectivity technique. To avoid oxidation effects of tungsten, a B4 C capping layer is deposited onto to the W layer. To observe the profiles of the tungsten layer with different thicknesses, three groups of W/B4 C bilayers with different thicknesses are prepared by using ultra high vacuum dc magnetron sputtering and measured by an x-ray diffractometer. A type of genetic algorithm called the differential evolution is used to simulate the measurement data so as to obtain the parameters of bilayers. According to the simulation, it is shown that the W layer density varies from 95.26% to 97.51% compared to the bulk. In our experiment, the deposition rate is 0.044 nm/s, and the thickness is varied in the range of 9.8-19.4 nm.     

Effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes

In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm² and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm² were achieved. We obtained luminance of 5993 cd/m² when current density was 140 mA/cm². The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength.