|
|||||
|
|
| 双层堆垛长波长InAs/GaAs量子点发光性质研究 | |
| 引用本文： | 魏全香,吴兵朋,任正伟,贺振宏,牛智川.双层堆垛长波长InAs/GaAs量子点发光性质研究[J].光学学报,2012,32(1):125001-267. |
| 作者姓名： | 魏全香 吴兵朋 任正伟 贺振宏 牛智川 |
| 作者单位： | 魏全香:山西大学物理电子工程学院, 山西 太原 030006 吴兵朋:中国科学院半导体研究所, 北京 100083 任正伟:中国科学院半导体研究所, 北京 100083 贺振宏:中国科学院半导体研究所, 北京 100083 牛智川:中国科学院半导体研究所, 北京 100083 |
| 基金项目： | 国家自然科学基金(90921015,60625405)资助课题。 |
| 摘 要： | 研究了双层堆垛InAs/GaAs/InAs自组织量子点的生长和光致发光(PL)的物理性质。通过优化InAs淀积量、中间GaAs层厚度以及InAs量子点生长温度等生长条件,获得了室温光致发光1391～1438nm的高质量InAs量子点。研究发现对量子点GaAs间隔层实施原位退火、采用Sb辅助生长InGaAs盖层等方法可以增强高密度(2×1010 cm-2)InAs量子点的发光强度,减小光谱线宽,改善均匀性和红移发光波长。 |
| 关 键 词： | 材料 双层堆垛 InAs量子点 光致发光 分子束外延 |
| 收稿时间： | 2011/6/15 |
Photoluminescence Study of Two Layer Stacked InAs/GaAs Quantum Dots |
|
| Wei Quanxiang,Wu Bingpeng,Ren Zhengwei,He Zhenhong,Niu Zhichuan.Photoluminescence Study of Two Layer Stacked InAs/GaAs Quantum Dots[J].Acta Optica Sinica,2012,32(1):125001-267. | |
| Authors: | Wei Quanxiang Wu Bingpeng Ren Zhengwei He Zhenhong Niu Zhichuan |
| Institution: | 1Department of Physics,Shanxi University,Taiyuan,Shanxi 030006,China 2Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) |
| Abstract: | The molecular beam epitaxy growth and physical property of photoluminescence (PL) of two layer stacked InAs/GaAs quantum dots have been investigated. The emission wavelengths of the InAs quantum dots (QD) are extended to 1391~1438 nm through optimizations of growth conditions including InAs deposition amounts, thicknesses of GaAs space layers and growth temperatures. It is found that the PL intensities, wavelengths, line widths and uniformities of the high density (2×1010 cm-2) InAs QD are improved by using in-situ annealing of GaAs interval layers and Sb assisted growth of InGaAs cover layers. |
| Keywords: | materials bilayer stacked InAs quantum dots photoluminescence (PL) molecular beam epitaxy |
| 本文献已被 CNKI 等数据库收录！ | |