Viscous flow and MOS properties of CaF2-B2O3-GeO2-SiO2 glasses with ionic bonds

The capacitance and voltage (C-V) characteristics of Metal-Oxide-silicon (MOS) capacitors passivated by CaF₂-B₂O₃-GeO₂-SiO₂ glasses with OH^m ions, water and fluoride contents were investigated. As the OH^m absorption coefficients of the glass increased, adverse effects on the recovery of hysteresis C-V curve shifts was observed. The content of OH^m ions is closely related to the fluoride content in the CaF₂-B₂O₃-GeO₂-SiO₂ glass. The viscous-flow point of the glass was lowered with increasing degree of ionic character obtained from Hannay's equation.     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

A Theoretical Study of Super-Excited States of F2

In the framework of quantum defect theory, we study super-excited states of F2 molecules which can dissociate into F^＋ （^3P2,1,0） and F^-（^1 So） ion-pair. Based on our calculation, we present a vibrational resolved assignment of the high precision photofragment yield spectra for F^- from the F2 ion-pair production.     

Pulsed-laser deposition of Ta-doped PZT ferroelectric films for memory applications using conductive oxide La0.25Sr0.75CoO3 and SrRuO3 electrodes

New methods for fabricating highly 𘚡¢-oriented and complete 𘜏¢-textured Pb(Ta_0.05Zr_0.48Ti_0.47)O₃ (PTZT) films on Pt/TiO₂/SiO₂/Si(001) substrates by pulsed-laser deposition have been developed using conductive oxide La_0.25Sr_0.75CoO₃ and SrRuO₃ electrodes. The 𘚡¢-preferred orientated PTZT ferroelectric capacitor was not subjected to loss of its polarization after 1᎒¹⁰ switching cycles at an applied voltage of 5 V and a frequency of 1 MHz, and the 𘜏¢-textured PTZT film capacitor retains 94.7% of its polarization after 1.5᎒¹⁰ switching cycles at 5 V and 50 kHz. The PTZT capacitors using these conductive oxide electrodes have low leakage current dominated by Schottky field emission mechanism.     

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

We employ the Ta2Os/PVP （poly-4-vinylphenol） double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta205 insulator layers, the device with the Ta2Os/PVP doublelayer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54 cm2/Vs, and the decreasing threshold voltage from 4.38 V to -2.5 V. The results suggest that the Ta2Os/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.     

Role of bismuth precursor in crystallization of SrBi2Ta2O9 thin films

Crystallization of SrBi₂Ta₂O₉ (SBT) thin films was studied as a function of viscosity of bismuth precursor and baking temperature, in order to fabricate capacitors with improved ferroelectric properties. SBT thin films were deposited on to Pt substrates using a chemical solution deposition (CSD) technique. Post-deposition anneal at 750 °C for 1 h in oxygen atmosphere revealed a significant influence of baking temperature and the viscosity of bismuth precursor on the microstructure and the ferroelectric properties of SBT thin films. A high baking temperature (350 °C) and a low viscosity of bismuth precursor (8 cp) yielded larger amounts of Bi₂O₃ secondary phase, smaller SBT grains (104 nm), and lower remanent polarization (P_r=2.0 7c/cm²). Additionally, these films exhibited a very high rate of ageing (>45% reduction in P_r after 7 days). A modified CSD process is suggested, which could suppress the formation of Bi₂O₃ secondary phase. Films fabricated using modified CSD technique exhibited a much larger grain size of 165 nm, higher P_r of 7.2 7c/cm², and significantly improved ageing characteristics (<1% reduction in P_r after 7 days). A qualitative model to describe the ageing in SBT-based capacitors is also suggested.     

Defect generation in polycrystalline Cu(In,Ga)Se2 by high-energy electron irradiation

We investigate the degradation of ZnO/CdS/ Cu(In,Ga)Se₂ heterojunction solar cells for space applications and the defect generation in polycrystalline Cu(In,Ga)Se₂ thin films by irradiation with 1-MeV electrons with fluences J_e up to J_e=5᎒¹⁸ cm^-2. Notable degradation of the solar cell performance starts at fluences of J_e=10¹⁷ cm^-2 where the open circuit voltage decreases by about 5% while short circuit current and fill factor remain essentially unaffected. Thus, Cu(In,Ga)Se₂ solar cells withstand electron fluences which are higher by one order of magnitude or more when compared to other technologies. A model describes the absolute open circuit voltage loss considering the increase of space charge recombination by electron irradiation-induced defects. Defect analysis by admittance spectroscopy shows that acceptor defects with an energy distance of approximately 300 meV from the valence band are generated at a rate %=0.017 (ǂ.01) cm^-1.     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

Optical Emission Spectroscopy Investigation of a Surface Dielectric Barrier Discharge Plasma Aerodynamic Actuator

The optical emission spectroscopy of a surface dielectric barrier discharge plasma aerodynamic actuator is investigated with different electrode configurations, applied voltages and driving frequencies. The rotational temperature of N2 （C^3 Ⅱu） molecule is calculated according to its rotational emission band near 380.5 nm. The average electron energy of the discharge is evaluated by emission intensity ratio of first negative system to second positive system of N2. The rotational temperature is sensitive to the inner space of an electrode pair. The average electron energy shows insensitivity to the applied voltage, the driving frequency and the electrode configuration.     

Preparation and Luminescence Characteristics of Ca3Y2（BO3）4：Eu^3＋ Phosphor

Ca3Y2 （BO3）4：Eu^3＋ phosphor is synthesized by high temperature solid-state reaction method, and the Iuminescence characteristics are investigated. The emission spectrum exhibits two strong red emissions at 613 and 621 nm corresponding to the electric dipole ^5 Do- ^7F2 transition of Eu^3＋ under 365 nm excitation, the reason is that Eu^3＋ substituting for Y^3＋ occupies the non-centrosymmetric position in the crystal structure of Ca3 Y2 （BO3）4. The excitation spectrum for 613 nm indicates that the phosphor can be effectively excited by ultraviolet （UV） （254 nm, 365nm and 400nm） and blue （470nm） light. The effect of Eu^3＋ concentration on the emission intensity of Ca3 Y2 （BO3）4 ：Eu^3＋ phosphor is measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The CIE colour coordinates of Ca3Y2 （BO3）4：Eu^3＋ phosphor is （0.639, 0.357） at 15mol% Eu^3＋.     

三硝基甲苯起爆机理实验研究

 用单脉冲化学激波管实验方法,使用自由基清扫剂和对比速率,测定了邻位和对位硝基甲苯在高温下,裂解瞬间（500 μs） 的化学反应机理,并测定了化学反应速率常数。作为邻位硝基甲苯的同分异构体,对位硝基甲苯的主要裂解通道与其不同。通过实验发现了邻位硝基甲苯的裂解重要通道,测到它的产1氧-2氮-3,4-环丁二稀基异嚙唑（Anthranil） 在瞬间随温度变化生成和很快消失的过程。由此,测得这一化学性质极不稳定的产物的消失速率常数为：k(Anthranil)＝3.7×10¹⁵·exp(－25 800/T) s^-1。分析这一过程的机理,认为第一步是硝基甲苯的裂解,第二步是Anthranil的生成,第三步是Anthranil中的N－O键的断裂。     

Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H+ Implantation for High-Density Charge Storage

Hydrogen ions are implanted into Pb（Zro.3Tio.7）03 1014 ions/cm^2. Pseudo-antiferroelectric behaviour in thin films at the energy of 40keV with a flux of 5 x the implanted thin films is observed, as confirmed by the measurements of polarization versus electric hysteresis loops and capacitance versus voltage curves. X-ray diffrac- tion patterns show the film structures before and after H＋ implantation both to be perovskite of a tetragonal symmetry. These findings indicate that hydrogen ions exist as stable dopants within the films. It is believed that the dopants change domain-switching behaviour via the boundary charge compensation. Meanwhile, time dependence of leakage current density after time longer than lOs indicates the enhancement of the leakage cur- rent nearly in one order for the implanted film, but the current at time shorter than i s is mostly the same as that of the original film without the ionic implantation. The artificial tailoring of the antiferroelectric behaviour through H＋ implantation in ferroelectric thin films is finally proven to be achievable for the device application of high-density charge storage.     

Fine-Structure Splittings of Nitrogen Isoelectronic Sequence： Competitions among Spin-Orbit Interactions, Breit Interactions and Electron Correlations

Using the multi-configuration Dirac-Fock self-consistent field method and the relativistic configuration interaction method with quantum-electrodynamics corrections performed by the GRASP code, we calculate the fine-structure energy levels of the ground-state configuration （1s^22s^22p^3） of the nitrogen isoelectronic sequence, according to the L-S coupling scheme with atomic number Z up to 22. Based on the calculated results, we elucidate the mechanism of the orderings of fine-structure energy levels of 2^ D3/2,5/2 and 2^P1/2,3/2 respectively, i.e. for 2^D3/2,5/2 orderings, the competition between the spin-orbit interactions and the Breit interactions; for 2^P1/2,3/2 orderings, the electron correlations, especially the electron correlations owing to the 2p^5 configuration interactions.     

Structural Deformation of CO22+ in Intense Femtosecond Laser Fields

The angular distributions of CO^＋ from the dissociation of CO2^2＋ and CO2^＋ in intense femtosecond laser fields （45 fs, about 5 × 10^15 W/cm^2） are studied at a laser wavelength of 800nm based on the time-of-flight mass spectra of CO^＋ fragment ions. The experimental results show that structural deformation occurs in the charge state of CO2^2＋ and the CO^＋ maintains linear geometrical structure.     

High Power Continuous-Wave and Acousto-Optic Q-Switched Nd：GdVO4 Laser Operated at 912 nm

We present a high power and efficient operation of the ^4F3/2 → ^4I9/2 transition in Nd：GdVO4 at 912nm. In the cw mode, the maximum output power of 8.6 W is achieved when the incident pump power is 40.3 W, leading to a slope efficiency of 33.3% and an optical-optical efficiency of 21.3%. To the best of our knowledge, this is the highest cw laser power at 912nm obtained with the conventional Nd：GdVO4 crystal. Pulsed operation of 912nm laser has also been realized by inserting a small aeousto-optie （A-O） Q-Switch inside the resonator. As a result, the minimal pulse width of 20ns and the average laser power 1.43 W at the repetition rate of lOkHz are obtained, corresponding to 7.1 kW peak power. We believe that this is the highest laser peak power at 912nm. Furthermore, duration of 65ns has also been acquired when the repetition rate is 100 kHz.     

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO2）0.5（SiO2）0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. Zr02 nanocrystals are precipitated from the phase separation of （ZrO2）0.5（SiO2）0.2 films annealed at 800℃, and isolated from each other within the amorphous （ZrO2）0.5（SiO2）0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10^13/cm2.     

Laser-induced positive ion and neutral atom/molecule emission from single-crystal CaHPO4·2 H2O: The role of electron-beam-induced defects

We examine laser-induced ion and neutral emissions from single-crystal CaHPO₄·2 H₂O (brushite), a wide-band-gap, hydrated inorganic single crystal, with 248-nm excimer laser radiation. Both laser-induced ion and neutral emissions are several orders of magnitude higher following exposure to 2 keV electrons at current densities of 200 7A/cm² and doses of 1 C/cm². In addition to intense Ca⁺ signals, electron-irradiated surfaces yield substantial CaO⁺, PO⁺, and P⁺ signals. As-grown and as-cleaved brushite show only weak neutral O₂ and Ca emissions, whereas electron-irradiated surfaces yield enhanced O₂, Ca, PO, PO₂, and P emissions. Electron irradiation (i) significantly heats the sample, leading to thermal dehydration (CaHPO₄ formation) and pyrolysis (Ca₂P₂O₇ formation) and (ii) chemically reduces the surface via electron stimulated desorption. The thermal effects are accompanied by morphological changes, including recrystallization. Although complex, these changes lead to high defect densities, which are responsible for the dramatic enhancements in the observed laser desorption.     

Vacuum Ultraviolet Excited Photoluminescence Properties of Novel Na3Y9O3（BO3）8：Tb^3＋ Phosphor

The novel vacuum ultraviolet （VUV） excited Na3 Y9O3 （BO3）8：Tb^3＋ （NYOB：Tb^3＋） green phosphor is prepared. Strong VUV photoluminescence and high quenching concentration of Tb^3＋ （20 wt%） are observed in NYOB： Tb^3＋ and the strong emission are correlated with the unique layer-type structure of NYOB. All the characteristic 4 f - 5d transitions of Tb^3＋ and the host absorption band in VUV region are identified in the excitation spectrum. Based on the results, the energy levels scheme of Tb^3＋ in NYOB：Tb^3＋ is first established. This newly developed NYOB：Tb^3＋ phosphor shows excellent optical properties when compared with the commercial Zn2SiO4：Mn^2＋ and would be a potential VUV-excited green phosphor.     

Simultaneous Generation of Multi-Wavelength Laser from Nd:YAG Crystals in a Cruciform Cavity

A cruciform cavity is presented for multi-wavelength laser generation. On the basis of considering the optimal power ratio and good spatial overlap of the two fundamental beams, the maximum output power of 589 nm laser reaches 3.5 W when the pumping power of Nd：YAG A and Nd：YAG B are 311.5 W and 261.8 W, respectively. At the same time, the other wavelength lasers are also obtained with the output power distribution of 2.5 W at 66Onto, 15 W at 532nm, lOOmW at 1319nm and 240mW at 1064nm. The corresponding beam quality factors are M^2 x = 4.93, M^2 y = 5.01 at 589nm, M^2z = 4.51, M^2 y = 4.85 at 660hm, and M^2 x = 4.12, M^2 y = 3.96 at 532nm, respectively. The instabilities of the three visible lights are measured, which are also less than 2% within three hours.     

Photovoltaic and Electroluminescence Bifunctional Devices with Starburst Amine and Rare-Earth-Complexes

We fabricate the organic photovoltaic （PV） devices, in which 4,4＇,4＂-tris-（2-methylphenylphenylamino）triphenylamine （m-MTDATA） and rare earth （RE） （dibenzoylmethanato）a（bathohenanthroline） （RE（DBM）abath） （RE = Nd or Pr） are used as electron donor and acceptor, and investigate their PV properties. The PV diode fabricated in the optimum processing conditions shows the open-circuit voltage of 1.91 V, short-circuit current of 0.1 mA/cm^2, fill factor of 0.38, and the overall power conversion efficiency of 1.9% when it is irradiated under UV light （4 m W/cm^2）. The photocurrent density exhibits an increase of 20% at least when a very thin LiF layer is inserted between the RE-complexes and the A1 cathode. A strong electroluminescence from the interface is also observed and the maximum luminance of a yellow emission resulted from the exciplex is 580 cd/m^2 at 17 V bias.