对带电轻子质量公式的一些猜测

本文建议轻子电磁自能通过（（δm）/m）=（1/（2π））n^-b 与量子数 n 联系起来,其中 b 为待定常数.并建议动量截断值 M 与引力常数 k 和精细结构常数α的联系为 M=（?）.得到了带电轻子质量公式（?）.利用 e^-和μ^-质量的实验值和α值作输入,给出计算值 k=（6.67231±0.00026）×10^-8 cm³g^-lsec^-2和m_τ=（1782.306±0.078）MeV,与观察值 k=（6.6720±0.0041）×10^-8cm³ g^-1sec^-2和 m_τ=(1782_-4⁺³)MeV 很好符合.公式预言第四个带电轻子质量应为 m=（11725.47±0.51）MeV 可以在最近的实验中检验。本文还对所建议的质量公式和结果进行了讨论.     

(0－3/2)电磁束缚系统的库仑裂解与衰变

本文利用(0－3/2)电磁束缚系统相对论协变的近似B-S波函数和复合粒子量子场论的微扰展开理论, 分别计算了(π⁺Ω^－)原子的库仑裂解截面与衰变几率. 高能(π⁺Ω^－)原子在原子核屏蔽库仑场中的裂解截面为σ=Z^4/3×2.9×10^－18cm², 衰变几率的计算结果为w[(π⁺Ω^－)→π⁺Λ⁰K^－]/w[Ω^－→Λ⁰K^－]=1+O(α).     

质心系能量40GeV e+e－反应中, 利用时间扩展室测定τ粒子寿命可达到精度的蒙特卡洛计算

到目前为止, 利用e⁺e^－→τ⁺τ^－反应测量τ粒子寿命的最精确测定值是MARKⅡ实验组报道的(3.20±0.41±0.35)×10^－13秒, 其中第二、三两项分别为统计误差和系统误差. 我们的计算表明, 在与上述实验相同的束流管道壁厚、束流空间分散和积分亮度(40pb^－1)条件下, 利用r-φ平面上位置分辨40μ的时间扩展室作为顶点探测器, 当质心系能量为√s=40GeV时, τ寿命的统计误差可降低到0.13×10^－13秒, 估计系统误差的大小与统计误差相近.     

海拔3220米动量大于4 GeV/c的μ子垂直积分动量谱

我们在云南海拔3220米高山上,利用G-M计数管磁谱仪,测量了动量大于4 GeV/c的宇宙线μ子垂直积分动量谱.实验给出的谱可用一指数函数表示:I（>P）=Q（p+4）^1.86±0.06(cm^-2·sr^-1·s^-1),其中动量P以GeV/c为单位,Q为常数.同时测量了动量在4—23 GeV/c范围μ子的荷电比为N_μ⁺/N_μ^-=1.26±0.11.另外对本谱仪的动量误差问题作了讨论和计算.     

Cu100-xZrx金属玻璃压缩率及压力感生晶化现象

 本文采用金刚石对顶压砧高压装置和高压X射线技术测定了两种金属玻璃线压缩率曲线；得到Cu₃₀Zr₇₀和Cu₂₅Zr₇₅的线压缩率分别为2.7×10^-3 GPa^-1和2.3×10^-3 GPa^-1，实验最高压力超过30 GPa。实验过程中首次观察到Cu-Zr金属玻璃在室温下加压发生晶化的现象。     

高温高应变率下纯锆的本构模型研究

 研究了常温至1 073 K、不同应变率下（4.1×10^－4 s^－1～2.8×10³ s^-1）锆的压缩力学性能。结果表明,锆的流动应力对温度和应变率的变化比较敏感,随应变率的提高而增大,随温度的升高而降低。基于位错动力学理论,建立了锆的本构模型,并考虑塑性变形过程中孪晶演化的影响,对模型进行了修正。修正后的本构模型预测结果与实验结果吻合较好,可描述很宽应变率和温度范围内锆的塑性变形行为。     

关于（e+e-）,（μ+μ-）原子在库仑场的裂解

本文应用了复合粒子场论的微扰展开理论和自旋为（1/2-1/2）的库仑相互作用原子的Bethe-Salpeter协变波函数的近似解,计算了（e⁺e^-）（μ⁺μ^-）原子的高速飞行下裂解截面及能谱。结果表明（e⁺e^-）原子的裂解截面比前人的计算约小20％。此外,计算还表明（e⁺e^-）及（μ⁺μ^-）原子的单态和三重态裂解截面对任意主量子数n,和极端相对论近似下将精确相等,而前人的计算中只是n=2时才有这一结果,而对n=1时,两者相差约有25％。看来很可能是计算中的错误所致。     

凝聚炸药中超压爆轰的实验研究

 采用飞片碰撞技术，在TNT/RDX（40/60）炸药中获得了2.5倍于正常爆轰的最大超压值，得到了超压爆轰下爆轰产物物态方程p=Aρ^{k+A₁(p-p_J)}（p－爆压，单位GPa，ρ－密度，单位kg/m³，A=ρ_J/ρ^k_J，p_J=27.06 GPa，ρ_J=2.3×10³ kg/m³，k=2.77，A₁=2.7×10^-3 GPa^-1，下表J代表正常爆轰状态）。该方程还可以较好地描述超压爆轰产物的二次冲击状态。     

0.1~800 MPa压力下方解石拉曼光谱的实验研究

 利用石英的拉曼谱峰与温度和压力的关系，检验了在金刚石压腔中用方解石拉曼谱峰确定体系压力的可行性，并初步确定了在常温下方解石的拉曼谱峰与压力的关系。实验研究结果表明：在实验的压力范围内方解石稳定，且其1 085 cm^-1 谱峰约为石英464 cm^-1谱峰的3倍强度，因此非常适合作为热液金刚石压腔的压力标定物。在温度26 ℃、压力0.1~800 MPa条件下，方解石的拉曼谱峰（1 085 cm^-1）随着压力的增加，呈线形增大，其关系式为：p(MPa)=192×(ν_p－1 085)－21.8，1 085 cm^-1<ν_p<1 090 cm^-1。     

掺铒碲钨酸盐玻璃光谱性质的研究

合成了不同浓度Er³⁺掺杂的TeO₂-WO₃-Li₂O体系玻璃（TW glasses）,详细研究了掺杂浓度对这种碲钨酸盐玻璃光学特性的影响。计算了Judd Ofelt(J-O)强度参数,研究了掺杂浓度对15 μm发射带宽的影响,及不同掺杂浓度下Er³⁺的⁴I_11/2-⁴I_13/2和⁴I_13/2-⁴I_15/2无辐射跃迁过程。实验得到了在TW 玻璃中Er³⁺的⁴I_13/2-⁴I_15/2跃迁的浓度猝灭速率约为跃迁的浓度猝灭速率约为0.8×10^-18cm³·s^-1,这对寻求Er³⁺在碲钨酸盐玻璃中的合理掺杂浓度有一定的参考意义,这对寻求Er³⁺在碲钨酸盐玻璃中的合理掺杂浓度有一定的参考意义。实验发现Er³⁺的⁴I_11/2-⁴I_13/2无辐射弛豫速率在这种玻璃体系中约是不含WO₃的碲酸盐玻璃中的2倍,说明含WO₃的掺铒碲钨酸盐玻璃更有利于在980 nm激光泵浦下实现15 μm光放大。     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric

Deep-trap properties of high-dielectric-constant （k） HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5eV, 1.8 ×10^-16 cm^2 and 1.0 × 10^16 cm^-3, respectively.     

Physical Explanation on Designing Three Axes as Different Resolution Indexes from GRACE Satellite-Borne Accelerometer

The GRACE Earth＇s gravitational field complete up to degree and order 120 is recovered based on the same and different three-axis resolution indexes from satellite-borne accelerometer using the improved energy conservation principle. The results show that designing XA1（2） as low-sensitivity axis （3 × 10^-9 m/s^2） of accelerometer and designing YA1（2） and ZA1（2） as high-sensitivity axes （3 × 10^-10 m/s^2） are reasonable. The physical reason why the resolution of XA1（2） is one order of magnitude lower than YA1（2） and ZA1（2） is that non-conservative forces acting on GRACE satellites are mainly decomposed into YA1（2） and ZA1（2） in the orbital plane. Since XA1（2） is not orthogonal accurately to orbital plane during the development of accelerometer, the measurement of XA1（2） can not be thrown off entirely, but be reduced properly.     

Optical detection of ballistically injected electrons in III/V heterostructures

We present a novel spectroscopic technique that is based on the ballistic injection of minority carriers from the tip of a scanning-tunneling microscope into a semiconductor heterostructure. By analyzing the resulting electro-luminescence spectrum as a function of tip-sample bias, both the injection barrier height and the carrier relaxation rate &_s after injection can be determined. At 4.2 K we found &_s=5᎒¹³ s^-1 and at 77 K we found &_s=8᎒¹³ s^-1. From current-dependent measurements we find that, at room temperature, a large fraction of the carriers is trapped prior to radiative recombination. At high currents or low temperatures the traps become saturated. We tentatively identify the Be acceptors in the structure as trapping centers.     

Al and Ag diffusion study in α-titanium

The diffusion of implanted Al and Ag in !-Ti has been studied in the 948-1073 and 823-1073 K temperature ranges by using the nuclear reaction analysis and Rutherford backscattering techniques, respectively. The measurements show that for both solutes, the diffusion coefficients follow a linear Arrhenius plot, the characteristic diffusion parameters D₀ and Q being the following: for Al, D₀=(1.4ǃ.2) ᎒^-2 m² s^-1 and Q=326ᆞ kJ/mol and for Ag, D₀=(1ǂ.75) ᎒^-4 m² s^-1 and Q=279Lj kJ/mol. The above parameters are typical of a normal substitutional behavior.     

Branching ratio and CP asymmetry of Bs→K0*(1430)η(') decays in the PQCD approach

In the two-quark model supposition for K₀^*(1430), which can be viewed as either the first excited state (Scenario Ⅰ) or the lowest lying state (Scenario Ⅱ), the branching ratios and the direct CP-violating asymmetries for decays B_s⁰→K₀^*0(1430)η^(') are studied by employing the perturbative QCD factorization approach. We find the following results: (a) The CP averaged branching ratios of B_s⁰→K₀^*0(1430)η and B_s⁰→K₀^*0(1430)η' are small and both in the order of 10^-7. If one views K₀^*(1430) as the lowest lying state, B (B_s⁰→K₀^*0(1430)η)≈3.9×10^-7 and B (B_s⁰→K₀^*0(1430)η')≈7.8×10^-7. (b) While the direct CP-violating asymmetries of these two decays are not small: if we still take the parameters of K₀^*(1430) in scenario Ⅱ, A_CP^dir (B_s⁰→K₀^*0(1430)η)≈56.2% and A_CP^dir (B_s⁰→K₀^*0(1430)η')≈2.4%. (c) The annihilation contributions will play an important role in accounting for future data, because both the branching ratios and the direct CP asymmetries of these two decays are sensitive to the annihilation type contributions.     

Improvement of Plasticity of Ti-Based Bulk Metallic Glasses by Addition of Nb

Ti-based bulk metallic glasses （Ti40Zr25Cu9NisBe18 ）100-x Nbx with x = 0 to 5 at. % are prepared by copper-mold casting. The glass formation ability is almost unchanged by addition of Nb. The compression plasticity is, however, apparently changed, from 3% at x = 0 to 13% at x = 3, about 330% increases at the strain rate of 1 × 10^-4 8^-1. The increment of the plasticity can be attributed to the segregation of Nb in the area of shear bands during the compression processing. An effective way to increase the plasticity of Ti-based bulk metallic glasses is thus proposed.     

Pure annihilation type decays B0→Ds- K2*+ and Bs→Da2 in perturbative QCD approach

We calculate the branching ratios of pure annihilation type decays B⁰→D_s^- K₂^*+ and B_s→Da₂ using the perturbative QCD approach based on k_T factorization. The branching ratios are predicted to be (60.6_{-16.5-10.4-2.1}^{+17.3+4.3+3.2} )× 10^-6 for B⁰→D_s^- K₂^*+, (1.1_-0.4-0.2-0.1^+0.4+0.1+0.1)×10^-6 for B_s→D⁰a₂⁰ and (2.3_-0.8-0.4-0.1^+0.8+0.2+0.1)×10^-6 for B_s→D^-a₂⁺. They are large enough to be measured in the ongoing experiment. Due to the shortage of contributions from penguin operators, there are no direct CP asymmetries for these decays in the Standard Model. We also derive simple relations among these decay channels to reduce theoretical uncertainties for the experiments to test the accuracy of theory and search of new physics signal.     

Sol-gel法制备Er3+-Yb3+共掺杂Al2O3粉末光致发光特性

采用异丙醇铝[Al(OC₃H₇)₃]为前驱体,溶胶-凝胶(Sol-gel)法制备Er³⁺-Yb³⁺共掺杂Al₂O₃粉末.实验结果表明:900 ℃烧结的粉末为固溶Er³⁺、Yb³⁺的γ-(Al,Er,Yb)₂O₃相和少量θ-(Al,Er,Yb)₂O₃相的混合物.Er³⁺-Yb³⁺共掺杂Al₂O₃粉末具有中心波长为1.533 μm的光致发光(PL)特性.1 mol % Er³⁺和1 mol% Yb³⁺共掺杂的Al₂O₃粉末的PL强度较1 mol % Er³⁺掺杂提高2倍,半峰宽从53 nm增加到63 nm.随泵浦功率的提高,PL强度呈线性增加后渐呈饱和趋势.