| Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator |
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| 作者姓名： | 赵谊华 董桂芳 王立铎 邱勇 |
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| 作者单位： | Key Laboratory of Organic Optoelectronics ＆ Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 50573039, the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20060003085, and the National Key Basic Research Programme of China under Grant No 2002CB613405. |
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| 摘 要： | We employ the Ta2Os/PVP （poly-4-vinylphenol） double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta205 insulator layers, the device with the Ta2Os/PVP doublelayer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54 cm2/Vs, and the decreasing threshold voltage from 4.38 V to -2.5 V. The results suggest that the Ta2Os/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.
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| 关 键 词： | 晶体管 氧化物 聚合物 绝缘子 |
| 收稿时间： | 2006-11-27 |
| 修稿时间： | 2006-11-27 |
Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator |
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| ZHAO Yi-Hua,DONG Gui-Fang,WANG Li-Duo,QIU Yong.Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator[J].Chinese Physics Letters,2007,24(6):1664-1667. |
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| Authors: | ZHAO Yi-Hua DONG Gui-Fang WANG Li-Duo QIU Yong |
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| Affiliation: | Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 |
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| Abstract: | We employ the Ta2O5/PVP (poly-4-vinylphenol) double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta2O5 insulator layers, the device with the Ta2O5/PVP double-layer insulator exhibits an enhancementof the field-effect mobility from 0.21 to 0.54cm2/Vs, and the decreasing threshold voltage from 4.38V to -2.5V. The results suggest that the Ta2O5/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance. |
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| Keywords: | 61 82 Fk 61 82 Ms 61 82 Pv |
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