全文获取类型
收费全文 | 132篇 |
免费 | 81篇 |
国内免费 | 10篇 |
专业分类
化学 | 21篇 |
晶体学 | 4篇 |
力学 | 1篇 |
综合类 | 3篇 |
物理学 | 194篇 |
出版年
2024年 | 1篇 |
2023年 | 3篇 |
2022年 | 10篇 |
2021年 | 17篇 |
2020年 | 10篇 |
2019年 | 4篇 |
2018年 | 6篇 |
2017年 | 17篇 |
2016年 | 17篇 |
2015年 | 5篇 |
2014年 | 23篇 |
2013年 | 11篇 |
2012年 | 10篇 |
2011年 | 13篇 |
2010年 | 8篇 |
2009年 | 8篇 |
2008年 | 10篇 |
2007年 | 8篇 |
2006年 | 6篇 |
2005年 | 8篇 |
2004年 | 2篇 |
2003年 | 4篇 |
2002年 | 2篇 |
2001年 | 3篇 |
2000年 | 2篇 |
1999年 | 2篇 |
1998年 | 3篇 |
1997年 | 3篇 |
1996年 | 2篇 |
1994年 | 2篇 |
1986年 | 1篇 |
1984年 | 2篇 |
排序方式: 共有223条查询结果,搜索用时 15 毫秒
1.
With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology, medical sciences, and communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe2). An order of magnitude performance enhancement was observed in photodetection based on PdSe2/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1-THz and 0.3-THz irradiations, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1-THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe2 in terms of air-stable, suitable sensitivity and speed, which may have great application in terahertz detection. 相似文献
2.
材料的禁带宽度是影响光电探测器探测范围的重要因素。单层2H-MoTe2因具有合适的禁带宽度引起了科研人员广泛的研究兴趣。本文基于非平衡态格林函数-密度泛函理论,采用第一性原理方法,研究了单层2H-MoTe2的光电效应。结果表明:在线性偏振光照射下,MoTe2产生的光电流函数与唯象理论相吻合;在光子能量范围1.6~1.8 eV (690~770 nm),对应于红光,能产生较大的光电流。利用能带结构和态密度分析了产生较大光电流的原因主要来自第一布里渊区S点的电子受激跃迁。同时发现在锯齿型方向偏压为0.8 V时,光电流达到峰值;然而在扶手椅型方向偏压为0.4 V时,光电流就达到峰值。这些计算结果可用于指导基于MoTe2光电探测器的设计,尤其是红外光电探测器的设计。 相似文献
3.
本文制备了一种基于PdSe2/GaAs异质结的高灵敏近红外光电探测器,该探测器是通过将多层PdSe2薄膜转移到平面GaAs上制成的. 所制备的PdSe2/GaAs异质结器件在808 nm光照下表现出明显的光伏特性,这表明近红外光电探测器可以用作自驱动器件. 进一步的器件分析表明,这种杂化异质结在零偏电压和808 nm光照下具有1.16×105的高开关比. 光电探测器的响应度和比探测度分别约为171.34 mA/W和2.36×1011 Jones. 而且,该器件显示出优异的稳定性和可靠的重复性. 在空气中2个月后,近红外光电探测器的光电特性几乎没有下降,这归因于PdSe2的良好稳定性. 最后,基于PdSe2/GaAs的异质结器件还可以用作近红外光传感器. 相似文献
4.
Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions 总被引:1,自引:0,他引:1 下载免费PDF全文
In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices. 相似文献
5.
InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers. 相似文献
6.
采用化学气相沉积法在云母衬底上制备了二维InSe纳米片, 研究了生长温度对二维InSe纳米片晶相、 形貌、 尺寸及厚度的影响. 构筑了基于二维InSe纳米片的光探测器并研究了其光探测性能, 结果表明, 在808 nm的近红外光辐照下, 其光响应度为1.5 A/W, 外量子效率为230%, 可探测度为3.1×10 8 Jones(1 Jones=1 cm·Hz 1/2·W -1), 上升和衰减时间分别为0.5 和0.8 s. 相似文献
7.
Fiber‐Based Flexible All‐Solid‐State Asymmetric Supercapacitors for Integrated Photodetecting System 下载免费PDF全文
Xianfu Wang Bin Liu Rong Liu Qiufan Wang Xiaojuan Hou Prof. Di Chen Prof. Rongming Wang Prof. Guozhen Shen 《Angewandte Chemie (International ed. in English)》2014,53(7):1849-1853
Integrated nanodevices with the capability of storing energy are widely applicable and have thus been studied extensively. To meet the demand for flexible integrated devices, all‐solid‐state asymmetric supercapacitors that simultaneously realize energy storage and optoelectronic detection were fabricated by growing Co3O4 nanowires on nickel fibers, thus giving the positive electrode, and employing graphene as both the negative electrode and light‐sensitive material. The as‐assembled integrated systems were characterized by an improved energy storage, enhanced power density (at least by 1860 % enhanced) by improving the potential window from 0–0.6 V to 0—1.5 V, excellent photoresponse to white light, and superior flexibility of both the fiber‐based asymmetric supercapacitor and the photodetector. Such flexible integrated devices might be used in smart and self‐powered sensory, wearable, and portable electronics. 相似文献
8.
9.
10.
采用分子束外延技术生长了两个叠层结构的双色量子阱红外探测器结构,并经过光刻和湿法刻蚀制作成两端结构的量子阱红外探测器单元器件. 通过改变量子阱势垒高度,势阱宽度,掺杂浓度,重复周期数等器件参数,可以使总电压在两个叠层之间产生适当的分布,从而使器件表现出不同的电压响应特点. 光电流谱测量显示,器件1随着外加偏置电压可实现对于中波大气红外窗口(3—5 μm)和长波大气红外窗口(8—12 μm)红外响应的切换,器件2在不同的偏置电压下可以对这两个波段同时做出响应. 本文探讨了两端叠层结构量子阱红外探测器的工作原
关键词:
电压调制
同时响应
量子阱红外探测器
双波段 相似文献