| 两端叠层结构的中长波量子阱红外探测器 |
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| 引用本文： | 霍永恒,马文全,张艳华,黄建亮,卫炀,崔凯,陈良惠.两端叠层结构的中长波量子阱红外探测器[J].物理学报,2011,60(9):98401-098401. |
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| 作者姓名： | 霍永恒 马文全 张艳华 黄建亮 卫炀 崔凯 陈良惠 |
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| 作者单位： | 中国科学院半导体研究所纳米光电子实验室,北京 100083 |
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| 基金项目： | 国家重点基础研究发展计划(973项目)(批准号:2010CB327602)资助的课题. |
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| 摘 要： | 采用分子束外延技术生长了两个叠层结构的双色量子阱红外探测器结构,并经过光刻和湿法刻蚀制作成两端结构的量子阱红外探测器单元器件. 通过改变量子阱势垒高度,势阱宽度,掺杂浓度,重复周期数等器件参数,可以使总电压在两个叠层之间产生适当的分布,从而使器件表现出不同的电压响应特点. 光电流谱测量显示,器件1随着外加偏置电压可实现对于中波大气红外窗口(3—5 μm)和长波大气红外窗口(8—12 μm)红外响应的切换,器件2在不同的偏置电压下可以对这两个波段同时做出响应. 本文探讨了两端叠层结构量子阱红外探测器的工作原
关键词：
电压调制
同时响应
量子阱红外探测器
双波段
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| 关 键 词： | 电压调制 同时响应 量子阱红外探测器 双波段 |
| 收稿时间： | 2010-08-18 |
Dual-band quantum well infrared photodetectors with two ohmic contacts |
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| Huo Yong-Heng,Ma Wen-Quan,Zhang Yan-Hu,Huang Jian-Liang,Wei Yang,Cui Kai and Chen Liang-Hui.Dual-band quantum well infrared photodetectors with two ohmic contacts[J].Acta Physica Sinica,2011,60(9):98401-098401. |
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| Authors: | Huo Yong-Heng Ma Wen-Quan Zhang Yan-Hu Huang Jian-Liang Wei Yang Cui Kai and Chen Liang-Hui |
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| Institution: | Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Two-color quantum well infrared photodetectors (QWIPs) with two stacks of QW series have been grown by molecular beam epitaxy and processed into mesa structure devices with only two ohmic contacts by photolithography and wet chemical etching. By changing QWIP parameters, including barrier height, well width, doping level and period number, the total bias voltage can be distributed to the two stacks in such a way that the stacked structure will show different photoresponse characteristics. The photocurrent s... |
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| Keywords: | voltage tunability simultaneous response quantum well infrared photodetector dual-band |
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