基于PdSe2/GaAs异质结的高灵敏近红外光伏型探测器的制备和图像传感的应用

本文制备了一种基于PdSe₂/GaAs异质结的高灵敏近红外光电探测器，该探测器是通过将多层PdSe₂薄膜转移到平面GaAs上制成的. 所制备的PdSe₂/GaAs异质结器件在808 nm光照下表现出明显的光伏特性，这表明近红外光电探测器可以用作自驱动器件. 进一步的器件分析表明，这种杂化异质结在零偏电压和808 nm光照下具有1.16×10⁵的高开关比. 光电探测器的响应度和比探测度分别约为171.34 mA/W和2.36×10¹¹ Jones. 而且，该器件显示出优异的稳定性和可靠的重复性. 在空气中2个月后，近红外光电探测器的光电特性几乎没有下降，这归因于PdSe₂的良好稳定性. 最后，基于PdSe₂/GaAs的异质结器件还可以用作近红外光传感器.

Fabrication of PdSe2/GaAs Heterojunction for Sensitive Near-Infrared Photovoltaic Detector and Image Sensor Application

In this study, we have developed a high-sensitivity, near-infrared photodetector based on PdSe₂/GaAs heterojunction, which was made by transferring a multilayered PdSe₂ film onto a planar GaAs. The as-fabricated PdSe₂/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination, indicating that the near-infrared photodetector can be used as a self-driven device without external power supply. Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10⁵ measured at 808 nm under zero bias voltage. The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10¹¹ Jones, respectively. Moreover, the device showed excellent stability and reliable repeatability. After 2 months, the photoelectric characteristics of the near-infrared photodetector hardly degrade in air, attributable to the good stability of the PdSe₂. Finally, the PdSe₂/GaAs-based heterojunction device can also function as a near-infrared light sensor.