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Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions
引用本文:蒲红斌,贺欣,全汝岱,曹琳,陈治明.Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions[J].中国物理 B,2013(3):451-456.
作者姓名:蒲红斌  贺欣  全汝岱  曹琳  陈治明
作者单位:Department of Electronic Engineering,Xi’an University of Technology
基金项目:Project supported by the National Natural Science Foundation of China (Grant Nos. 60876050 and 51177134)
摘    要:In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.

关 键 词:β-FeSi/H-SiC  near-infrared  photodetector  spectral  response

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunctions
Pu Hong-Bin,He Xin,Quan Ru-Dai,Cao Lin,and Chen Zhi-Ming.Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunctions[J].Chinese Physics B,2013(3):451-456.
Authors:Pu Hong-Bin  He Xin  Quan Ru-Dai  Cao Lin  and Chen Zhi-Ming
Affiliation:Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China
Abstract:
Keywords:β-FeSi2/4H-SiC  near-infrared photodetector  spectral response
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