| 单层2H-MoTe2光电效应的理论研究 |
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| 引用本文： | 罗兵,陈妍,徐中辉.单层2H-MoTe2光电效应的理论研究[J].人工晶体学报,2021,50(3):504-508. |
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| 作者姓名： | 罗兵 陈妍 徐中辉 |
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| 作者单位： | 1.江西理工大学信息工程学院,赣州 341000;2.江西理工大学电气工程与自动化学院,赣州 341000 |
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| 基金项目： | 国家自然科学基金(11864014); 国家重点研发计划重点专项(2020YFB1713700); 江西理工大学“清江青年英才支持计划”优秀人才计划(3203304666); 赣州市科技创新人才计划 (赣市科发[2019]60-43) |
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| 摘 要： | 材料的禁带宽度是影响光电探测器探测范围的重要因素。单层2H-MoTe2因具有合适的禁带宽度引起了科研人员广泛的研究兴趣。本文基于非平衡态格林函数-密度泛函理论,采用第一性原理方法,研究了单层2H-MoTe2的光电效应。结果表明:在线性偏振光照射下,MoTe2产生的光电流函数与唯象理论相吻合;在光子能量范围1.6~1.8 eV (690~770 nm),对应于红光,能产生较大的光电流。利用能带结构和态密度分析了产生较大光电流的原因主要来自第一布里渊区S点的电子受激跃迁。同时发现在锯齿型方向偏压为0.8 V时,光电流达到峰值;然而在扶手椅型方向偏压为0.4 V时,光电流就达到峰值。这些计算结果可用于指导基于MoTe2光电探测器的设计,尤其是红外光电探测器的设计。
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| 关 键 词： | 光电探测器 单层2H-MoTe2 光电效应 能带结构 态密度 第一性原理 |
| 收稿时间： | 2020-11-05 |
Theoretical Study on the Photogalvanic Effect of Monolayer 2H-MoTe2 |
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| LUO Bing,CHEN Yan,XU Zhonghui.Theoretical Study on the Photogalvanic Effect of Monolayer 2H-MoTe2[J].Journal of Synthetic Crystals,2021,50(3):504-508. |
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| Authors: | LUO Bing CHEN Yan XU Zhonghui |
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| Affiliation: | 1. School of Information Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China;2. School of Electrical Engineering and Automation, Jiangxi University of Science and Technology, Ganzhou 341000, China |
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| Abstract: | The band gap of the material is an important factor affecting the detection ranges of the photodetector. The monolayer 2H-MoTe2 has attracted a wide range of research interests due to its suitable band gap. In this paper, based on the non-equilibrium Green's function-density functional theory, using first-principles methods, the photogalvanic effect(PGE) of the monolayer 2H-MoTe2 was studied. The results show that under linearly polarized light, the photocurrent function produced by MoTe2 is consistent with the phenomenological theory. It can generate a larger photocurrent in the photon energies range of 1.6 eV to 1.8 eV (690 nm to 770 nm). The reason for obtaining the higher photocurrent is the electron stimulated transition at the S point in the first Brillouin zone which analyzed using the band structure and density of states. Meanwhile, in the zigzag direction, when the bias voltage is 0.8 V, the photocurrent reaches its peak, but in the armchair direction, when the bias voltage is 0.4 V, the max photocurrent can be reached. The calculation results in this paper can be used to guide the design of photodetectors based on MoTe2, especially the design of infrared photodetectors. |
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| Keywords: | photodetector monolayer 2H-MoTe2 photogalvanic effect band structure density of state first-principle |
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