溅射MOS_2膜和PTFE膜在边界润滑条件下的摩擦学性能之研究

本文对溅射二硫化钼(MoS_2)膜和聚四氟乙烯(PTFE)膜在边界润滑条件下的摩擦学性能进行了研究。结果表明,与未镀膜的轴承钢相比,这两种固体润滑膜都具有较好的抗粘着性和减摩性,以及对硬质颗粒良好的嵌入性,但在同样的负荷条件下,PTFE膜的磨损比MoS_2膜的轻微。     

Multilayers with high-reflectivity at 19.5 nm and low-reflectivity at 30.4 nm

The multilayer （ML） mirror with high-reflectivity （HR） at a specific emission line of 19.5 nm （Fe line） and low-reflectivity （LR） at 30.4 nm （He line） is needed to be designed and fabricated for observing the image of sun. Based on a variety of optimizations utilized different structures, the design is performed and the final results demonstrate that the reflectivity at 30.4 nm does not achieve minimum value when the reflectivity at 19.5 nm reaches the maximum value. The tradeoff should be done between the HR at 19.5 nm and LR at 30.4 nm. One optimized mirror is fabricated by direct current magnetron sputtering and characterized by grazing-incident X-ray diffraction （XRD） and synchrotron radiation （SR）. The experimental results demonstrate that the ML achieves the reflectivity of 33.3% at 19.5 nm and of 9.6× 10-4 at 30.4 nm at the incident angle of 13°.     

Intermetallic Pt2Si：magnetron-sputtering preparation and electrocatalysis toward ethanol oxidation

Although most transition metals have been tested as the promoter to Pt for electrocatalysis toward fuel cell reactions,semi-conductor elements,such as Si,have hitherto not been examined.Here we report a simple synthesis of intermetallic Pt2Si electrode using magnetron sputtering and the electrocatalysis toward ethanol oxidation reaction（EOR）.In comparison to Pt,the intermetallic Pt2Si surface turns out to be much more active in catalyzing the EOR：the onset potential shifts negatively by 150 mV,and the current density at 0.6 V increases by a magnitude of one order.Such an enormous enhancement in EOR catalysis is ascribed to the promotion effects of Si,which can not only provide active surface oxygenated species to accelerate the removal of COads,but also strongly alter the electronic property of Pt,as clearly indicated by the core-level shift in XPS spectrum.     

预制层溅射气压对CIGS薄膜结构及器件的影响

研究了金属预制层制备过程中溅射气压对Cu(In_1-xGa_x)Se₂(CIGS)薄膜及电池器件性能的影响.通过调节溅射气压改变预制层的结晶状态及疏松度与粗糙度,在合适的预制层结构下,活性硒化热处理过程中,可使Ga有效地掺入到薄膜中形成优质的CIGS固溶体.高溅射气压会使预制层过于致密,呈现非晶态趋势.经活性硒化热处理后,CIGS薄膜容易产生CIS与CGS"两相分离"现象,从而导致CIGS薄膜太阳电池的开路电压和填充因子降低,电池转换效率由10.03%降低到5.02%.     

Mo/Si aperiodic multilayer broadband reflective mirror for 12.5-28.5-nm wavelength range

Aperiodic molybdenum/silicon (Mo/Si) multilayer designed as a broadband reflective mirror with mean reflectivity of 10% over a wide wavelength range of 12.5-28.5 nm at incidence angle of 5° is developed using a numerical optimized method. The multilayer is prepared using direct current magnetron sputtering technology. The reflectivity is measured using synchrotron radiation. The measured mean reflectivity is 7.0% in the design wavelength range of 12.5-28.5 nm. This multilayer broadband reflective mirror can be used in extreme ultraviolet measurements and will greatly simplify the experimental arrangements.     

Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi₂Te₃热电薄膜和p型Sb₂Te₃热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi₂Te₃薄膜和Sb₂Te₃薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi₂Te₃关键词： 薄膜温差电池 2Te₃薄膜')" href="#">Sb₂Te₃薄膜 2Te₃薄膜')" href="#">Bi₂Te₃薄膜 离子束溅射     

Effect of Sputtering Parameters on Film Composition,Crystal Structure,and Coercivity of SmCo Based Films Deposited on Si （100） Substrates

The sputtering parameter mediated composition （SPMC） effect of 3.0-μm-thick SmCo-based films is experimentally and theoretically studied. The experimental results give a clear indication that the Sm concentration increases with the decreasing sputtering power or with the increasing Ar gas pressure, which are in agreement with the calculated values when the preferential sputtering effect is disregarded. The SPMC effect provides an opportunity for the same composite target to fabricate films with an Sm concentration varying from 13.8at.% to 17.3at.%, which is reasonable for the magnetic phase transformation （Sm2Co17→SmCo7→SmCo5） and the enhanced coercivity.     

退火温度和溅射时间对磁控溅射法制备Mg2Si薄膜的影响

采用磁控溅射法和原位退火工艺在钠钙玻璃衬底上制备 Mg2Si 薄膜。首先在钠钙玻璃衬底上交替溅射沉积两层Si、Mg 薄膜,冷却至室温后原位退火4 h,制备出一系列 Mg2Si 薄膜样品。通过 X 射线衍射仪(XRD) 、 扫描电子显微镜(SEM)对所得薄膜样品的晶体结构和表面形貌进行表征, 讨论了退火温度和溅射Si/Mg/Si/Mg 时间对制备 Mg2Si 薄膜的影响。结果表明,采用磁控溅射法在钠钙玻璃衬底上交替溅射两层Si、Mg 薄膜, 通过原位退火方式成功制备出单一相的 Mg2Si 薄膜,溅射Si/Mg/Si/Mg 的时间为12.5/9/12.5/9 min,退火温度为550 ℃ 时,制备的 Mg2Si 薄膜结晶度最好,连续性和致密性最强。这对后续 Mg2Si 薄膜器件的设计与制备提供了重要的参考。 积两层Si、Mg 薄膜, 冷却至室温后原位退火4 h, 制备出一系列 Mg2Si 薄膜样品. 通过 X 射线衍射仪(XRD) 、 扫描 电子显微镜(SEM)对所得薄膜样品的晶体结构和表面形貌进行表征, 讨论了退火温度和溅射Si/Mg/Si/Mg 时间 对制备 Mg2Si 薄膜的影响. 结果表明, 采用磁控溅射法在钠钙玻璃衬底上交替溅射两层Si、Mg 薄膜, 通过原位退火 方式成功制备出单一相的 Mg2Si 薄膜, 溅射Si/Mg/Si/Mg 的时间为12.5/9/12.5/9 min, 退火温度为550 ℃ 时, 制 备的 Mg2Si 薄膜结晶度最好, 连续性和致密性最强. 这对后续 Mg2Si 薄膜器件的设计与制备提供了重要的参考.     

溅射压强和退火气氛对Mg0.2Zn0.8O∶Al紫外透明导电薄膜结构与性能的影响

以自制Mg0.2Zn0.8O∶Al陶瓷为靶材,采用室温溅射后续退火磁控溅射工艺制备了Mg0.2Zn0.8O∶Al紫外透明导电薄膜.研究了溅射压强和退火气氛对Mg0.2Zn0.8O∶Al薄膜结构和光电性能的影响.结果表明:溅射氩气压强不影响薄膜的相结构,但对薄膜的取向生长和结晶质量有一定影响;薄膜的方块电阻随溅射压强的增加先大幅减小后有所增大,溅射气压为2.0 Pa时,薄膜的方块电阻最低;不同溅射气压下制备薄膜的透光范围均已扩展到了紫外区域,而且具有85;以上的高透射率,但溅射气压对薄膜的带隙宽度和透光率没有明显影响;室温下溅射制备的薄膜经真空退火处理后其导电性能显著提高,但在空气中退火处理后其导电性能反而有所下降.     

C+轰击铍的分子动力学模拟

使用分子动力学模拟方法研究了入射能量对C⁺离子与Be样品表面相互作用的影响。模拟结果表明,随着C⁺离子的入射能量增大,C⁺离子注入深度也增加,Be原子的溅射产额近似线性增加,而滞留在样品中的C原子数量变化不大,在C⁺离子轰击Be样品的初始阶段,样品中Be原子的溅射产额较大,而随着C⁺离子注入剂量的增加,Be原子的溅射产额逐渐减小并趋于稳定。在此作用过程中,在样品表面形成一个富C层,减缓了样品中Be原子的溅射速率,起到了保护Be样品的作用。