| 预制层溅射气压对CIGS薄膜结构及器件的影响 |
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| 引用本文： | 李光旻,刘玮,林舒平,李晓东,周志强,何青,张毅,刘芳芳,孙云.预制层溅射气压对CIGS薄膜结构及器件的影响[J].发光学报,2015,36(2):192-199. |
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| 作者姓名： | 李光旻 刘玮 林舒平 李晓东 周志强 何青 张毅 刘芳芳 孙云 |
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| 作者单位： | 1. 南开大学电子信息与光学工程学院 光电子薄膜与器件研究所, 天津 300071;
2. 天津城建大学理学院 应用物理系, 天津 300084 |
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| 摘 要： | 研究了金属预制层制备过程中溅射气压对Cu(In1-xGax)Se2(CIGS)薄膜及电池器件性能的影响.通过调节溅射气压改变预制层的结晶状态及疏松度与粗糙度,在合适的预制层结构下,活性硒化热处理过程中,可使Ga有效地掺入到薄膜中形成优质的CIGS固溶体.高溅射气压会使预制层过于致密,呈现非晶态趋势.经活性硒化热处理后,CIGS薄膜容易产生CIS与CGS"两相分离"现象,从而导致CIGS薄膜太阳电池的开路电压和填充因子降低,电池转换效率由10.03%降低到5.02%.
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| 关 键 词： | 溅射气压 粗糙度 CIGS固溶体 |
| 收稿时间： | 2014-11-25 |
Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films |
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| LI Guang-min;LIU Wei;LIN Shu-ping;LI Xiao-dong;ZHOU Zhi-qiang;HE Qing;ZHANG Yi;LIU Fang-fang;SUN Yun.Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films[J].Chinese Journal of Luminescence,2015,36(2):192-199. |
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| Authors: | LI Guang-min;LIU Wei;LIN Shu-ping;LI Xiao-dong;ZHOU Zhi-qiang;HE Qing;ZHANG Yi;LIU Fang-fang;SUN Yun |
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| Institution: | 1. Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;
2. Physics Department, School of Science, Tianjin Chengjian University, Tianjin 300384, China |
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| Abstract: | The influence of sputtering pressure on the structure and device performances of Cu(In1-xGax)Se2 (CIGS) thin films is investigated. The crystalline and roughness of precursors can be moderated by choosing appropriate sputtering pressure, which may facilitate Ga incorporation into the lattice during the selenization process. With the sputtering pressure increases, the precursors tend to be amorphous state and become denser. As a result, the selenized films may display "phase separation" of CIS and CGS which results in decrease of Voc and FF, and the cell efficiency drops from 10.03% to 5.02%. |
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| Keywords: | sputtering pressure roughness CIGS solid solution |
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