C+轰击铍的分子动力学模拟

使用分子动力学模拟方法研究了入射能量对C⁺离子与Be样品表面相互作用的影响。模拟结果表明，随着C⁺离子的入射能量增大，C⁺离子注入深度也增加，Be原子的溅射产额近似线性增加，而滞留在样品中的C原子数量变化不大，在C⁺离子轰击Be样品的初始阶段，样品中Be原子的溅射产额较大，而随着C⁺离子注入剂量的增加，Be原子的溅射产额逐渐减小并趋于稳定。在此作用过程中，在样品表面形成一个富C层，减缓了样品中Be原子的溅射速率，起到了保护Be样品的作用。

Molecular dynamics simulation of beryllium bombardment with C~+

Molecular dynamic simulations were performed to study the effect of the incident energy on the interreaction of C+ ion with Be sample surface.The simulated results show that with increasing C+ incident energy,the C+ implantation depth increases and the sputtering yield of Be increases near-linearly.However,the retention rate of C in the sample slightly changes.During the initial stage of the C+ bombarding Be sample,the sputtering yield of Be in sample increases sharply.With increasing exposure to C+,the spu...