Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi₂Te₃热电薄膜和p型Sb₂Te₃热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi₂Te₃薄膜和Sb₂Te₃薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi₂Te₃关键词： 薄膜温差电池 2Te₃薄膜')" href="#">Sb₂Te₃薄膜 2Te₃薄膜')" href="#">Bi₂Te₃薄膜 离子束溅射     

偶氮基杯芳烃化合物的合成及其偶氮-醌腙互变异构性质

通过芳胺的重氮化-偶合反应合成了8个偶氮基杯芳烃化合物, 其结构经IR, 1H NMR, ESI-MS和元素分析表征. 通过UV-Vis, 1H NMR和IR考察了溶液pH值对所合成化合物5,11,17,23-四[(2-苯并噻唑基)偶氮基]-25,26,27,28-四羟基杯芳烃(3)和5,17-二[(1-萘基)偶氮基]-25,26,27,28-四羟基杯芳烃(4)的偶氮-醌腙互变异构的影响. 结果表明, 随着溶液pH值增加, 醌腙体在偶氮-醌腙互变异构平衡中的比例增加, 当pH≥10时, 几乎全部转变为醌腙体. 特别当溶液pH=-1时, 化合物4可以形成一种大的共轭体系, 使其λmax由477 nm红移至545 nm.     

Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition

Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential （112） orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1：1：2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm.     

Composition-Dependent Characterization of Sb2Te3 Thin Films Prepared by Ion Beam Sputtering Deposition

The optimization of ion beam sputtering deposition process for Sb2 Te3 thin films deposited on BK7 glass substrates is reported. The influence of composition ratio on the thermoelectric properties is investigated. X-ray diffraction shows that the major diffraction peaks of the films match with those of Sb2 Te3. Hall effect and Seebeck coefficient measurement reveal that all the samples are of p-type. The Sb2 Te3 thin films exhibit the Seebeck coefficient of 190μVk^-1 and the electrical conductivity of 1.1 × 10^3 Scm^-1 when the atomic ratio of Sb to Te is 0.65. Carrier concentration and motility of the films increase with the increasing atomic ratio of Sb to Te. The Sb2 Tea film with a maximum power factor of 2.26×10^-3 Win^-1K^-2 is achieved when annealed at 400℃. Raman measurement shows that the main peaks are at about 120 cm^-1, 252 cm^-1 and 450 cm^-1, in agreement with those of V-VI compound semiconductors.     

Study of magnetic-rotation in ~(82)Rb by g-factor measurements

Magnetic rotation in ⁸²Rb has been investigated for the first time by g-factor measurement of intra-band states of the magnetic-rotational band built on the 11- state. The g-factors were measured by a TMF-IMPAD method and calculated by a semi-classical model of independent particle angular momentum coupling assumption. The g-factors and deduced shears angles decrease with the increasing of spin along the band, illustrating a step-by-step alignment of the valence protons and neutrons. The rapid alignment of the valence neutrons leads to a decrease of g-factors. The present results vividly reveal the shears mechanism of magnetic rotation.     

微波常压法合成水杨酸酯

在浓硫酸催化下，采用微波常压法由水杨酸分别与正丁醇、异丁醇、正戊醇和异戊醇反应合成相应的水杨酸酯。结果表明：当水杨酸：醇：Ｈ２ＳＯ４＝１：５．５：０．３（摩尔比）时，采用５６０Ｗ微波辐射２２ｍｉｎ，水杨酸酯的产率可达８８．７％￣９６．４％，反应速度至少是常规反应的１４倍。     

Magnetic moment measurements of mirror nuclei 12B and 12N

The spin polarized β-emitting mirror nuclei ¹²B(I^π=1⁺,T_1/2=20.18 ms) and ¹²N(I^π=1⁺,T_1/2=11 ms) are produced by the low nuclear reactions ¹¹B(d, p) ¹²B and ¹⁰B(³He,n) ¹²N and by selecting the projectile energy and the recoil angle. Their magnetic moments are measured by the β-NMR technique. The magnetic moments obtained after Knight shift correction are μ(¹²B)=1.001(17) μ_N and μ(¹²N)=0.4571(1) μ_N. The calculation using the existing shell model could not reproduce the measured magnetic moments for ¹²B and ¹²N simultaneously.     

脾动脉栓塞术治疗肝硬化脾功能亢进60例疗效观察

肝硬化并发门脉高压症和脾功能亢进内科治疗效果差，而脾切除术后，机体免疫功能被削弱，容易发生致命性感染[1]，故临床应用受到一定限制。近年来，随着介入医学的发展，部分脾动脉栓塞术（partial splenic em-bolization，PSE）已被公认为治疗门静脉高压引起的脾功能亢进的首选方法[2-3]。为进一步探讨PSE的临床疗效，本文将我科2008-01-2009-12行PSE治疗的60例肝硬化脾功能亢进患者的疗效报道并分析如下。     

离子束溅射沉积不同厚度铜膜的光学常数研究

利用Lambda-900分光光度计对离子束溅射沉积不同厚度Cu膜测定的反射率和透射率,运用哈德雷方程,并考虑基片后表面的影响,对离子束溅射沉积的Cu膜光学常数进行了计算。结果表明,在同一波长情况下,膜厚小于100 nm的纳米Cu膜光学常数随膜厚变化明显;膜厚大于100 nm后,Cu膜的光学常数趋于一定值。Cu膜不连续时的光学常数与连续膜时的光学常数随波长变化规律不同;不同厚度的连续膜的光学常数随波长变化规律相同,但大小随膜厚变化而变化。