Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.     

Optical Defect in GaN-Based Laser Diodes Detected by Cathodoluminescence

GaN-based laser diodes （LDs） with 399 nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition （MOCVD）. Electroluminescence spectra of the fabricated LDs show that the LDs from some grown wafers failed to emit laser. The SEM and XRD results show the similar surface morphology and interface qualities of multi quantum wells （MQWs） and super-lattices between LDs that succeed and fail to emit laser. However, the cathodoluminescence （CL） measurements reveal a kind of optical defect rather than structural defect in un-emitted LDs. Further depth-dependent CL imaging observation indicates that such optical defects originate from the MQWs to the surface of LDs as a non-irradiative recombination centre that should cause the failure of laser emitting of LDs.     

固相萃取-高效液相色谱-串联质谱法检测香辛料中罗丹明B

建立了香辛料中罗丹明B的固相萃取-高效液相色谱-串联质谱分析方法。样品经乙腈提取后离心,在提取液中加入10 mL 1%三氯乙酸溶液后,用Bond Elut Plexa PCX强阳离子固相萃取柱净化、富集,Pursuit C18色谱柱(100 mm×2.0 mm, 3 μm)分离,以0.1%甲酸水和甲醇为流动相梯度洗脱,电喷雾电离正离子模式下多反应监测(MRM)模式进行定性、定量检测。结果表明,在0.6～6 μg/L范围内的线性相关系数R2＞0.99;方法的定量限为1.2 μg/kg;添加量分别为1.197、2.992及5.985 μg/L时的加标回收率为80%～121%,相对标准偏差＜15%。同时对流动相的洗脱梯度、提取溶剂、固相萃取柱等条件进行了优化。该方法的专属性较强,基质效应较小,可用于固体香辛料产品中罗丹明B的定性、定量分析。     

GaN基紫光LED的高反射率p型欧姆接触

研究用于GaN基大功率倒装焊(Flip-chip)紫光LED(UV-LED)的高反射率p型欧姆接触的电学和光学性能。用磁控溅射的方法在GaN基LED外延片表面沉积了不同厚度Ag,Al,Au和Pd四种金属,测量了样品的反射率和透射率。结合同步辐射高强度X射线衍射和AFM对金属薄膜的晶体结构进行分析,并对表面形貌进行了观测,对由金属薄膜构成的多层膜结构及其对光反射率的作用机理进行了研究。测量结果表明,在入射光波长为400nm时,Ni/Au/Ag和Ni/Au/Al电极的反射率比Ni/Au的反射率提高了三倍。同时与p-GaN有良好的欧姆接触特性。     

Optical and Electronic Properties of InGaN／GaN Multi—Quantum—Wells Near—Ultraviolet Lighting—Emitting—Diodes Grown by Low—Pressure Metalorganic Vapour Phase Epitaxy

The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from l 0 mA to 50 mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.     

Improvement of Properties of p-GaN by Mg Delta Doping

The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.     

一类三阶拟线性发展方程的整体解

本文研究一类三阶拟线性发展方程ｕｔｔ－Δｕｔ＋ｕｔ＝ｎｉ＝１ｘｉσｉ（ｕｘｉ），（ｘ，ｔ）∈Ω×（０，Ｔ）的初边值问题，其中ΩＲｎ（ｎ≥１）为一有界域．证明了只要σｉ（ｓ）∈Ｃ１，σ′ｉ（ｓ）（ｉ＝１，…，ｎ）有界并且初始函数满足一定的条件，则上述问题存在唯一的整体弱解．     

94K低温下和室温下GaN基MSM紫外光探测器性能的比较

在采用MOCVD技术生长的GaN膜上制备出MSM紫外光探测器，分别在室温下和94K低温下，测量了探测器对不同光波长的响应、同一光波长下对不同偏压的响应、不同斩波频率下的响应。结果表明，在94K下响应有了很大的改善。当光波长从360nm增加到450nm时，响应下降了3个数量级，而常温下只下降两个数量级，但探测器的时间响应常数变长了。     

一类非线性发展方程整体解的存在性、渐近性与解的爆破

研究一类非线性发展方程初边值问题整体弱解的存在性，渐近性和解的爆破问题，证明在关于非线性项的不同条件下，上述初边值问题分别在大初值和小初始能量的情况下存在整体弱解，并且讨论了弱解的渐近性。还证明：在相反的条件下，上述弱解在有限时刻爆破，并且给出了一个实例。     

关于一类拟线性拟抛物方程解的Blow─up问题

本文利用Ｆｏｕｒｉｅｒ空间的比较原理研究一类拟线性拟抛物方程解的Ｂｌｏｗ－ｕｐ问题，并给出了其解在有限时刻Ｂｌｏｗ－ｕｐ的条件。