94K低温下和室温下GaN基MSM紫外光探测器性能的比较

在采用MOCVD技术生长的GaN膜上制备出MSM紫外光探测器，分别在室温下和94K低温下，测量了探测器对不同光波长的响应、同一光波长下对不同偏压的响应、不同斩波频率下的响应。结果表明，在94K下响应有了很大的改善。当光波长从360nm增加到450nm时，响应下降了3个数量级，而常温下只下降两个数量级，但探测器的时间响应常数变长了。

Comparison of Properties of Metal-semiconductor-metal GaN Ultraviolet Photodetectors Operated at 94K Low Temperature and at Room Temperature

Metal semiconductor metal ultraviolet photodetectors have been fabricated on undoped GaN films grown by metalorganic chemical vapor deposition. Response dependence on wavelength, voltage bias and chopper frequency has been extensively investigated both at room tempe rature and at 94K low temperature. The results show that the response time drops by more than three levels of magnitude when the incident light's wavelength increases from 360 to 450nm at 94K. For the incident light less than 360nm, its response time at 94K is about one level greater than that at room temperature. An increase in response time was also observed at 94K.