Optical Defect in GaN-Based Laser Diodes Detected by Cathodoluminescence

GaN-based laser diodes （LDs） with 399 nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition （MOCVD）. Electroluminescence spectra of the fabricated LDs show that the LDs from some grown wafers failed to emit laser. The SEM and XRD results show the similar surface morphology and interface qualities of multi quantum wells （MQWs） and super-lattices between LDs that succeed and fail to emit laser. However, the cathodoluminescence （CL） measurements reveal a kind of optical defect rather than structural defect in un-emitted LDs. Further depth-dependent CL imaging observation indicates that such optical defects originate from the MQWs to the surface of LDs as a non-irradiative recombination centre that should cause the failure of laser emitting of LDs.     

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Non-polar a-plane (110) GaN films have been grown on r-plane (102) sapphire substrates by metal organic chemical vapour deposition. The influences of Ⅴ/Ⅲ ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. Ⅴ/Ⅲ ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [100] direction. When the Ⅴ/Ⅲ ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.     

Integrated physics package of a chip-scale atomic clock

The physics package of a chip-scale atomic clock （CSAC） has been successfully realized by integrating vertical cavity surface emitting laser （VCSEL）, neutral density （ND） filter, λ/4 wave plate, 87Rb vapor cell, photodiode （PD）, and magnetic coil into a cuboid metal package with a volume of about 2.8 cm3. In this physics package, the critical component, 87Rb vapor cell, is batch-fabricated based on MEMS technology and in-situ chemical reaction method. Pt heater and thermistors are integrated in the physics package. A PTFE pillar is used to support the optical elements in the physics package, in order to reduce the power dissipation. The optical absorption spectrum of 87Rb D1 line and the microwave frequency correction signal are successfully observed while connecting the package with the servo circuit system. Using the above mentioned packaging solution, a CSAC with short-term frequency stability of about 7 × 10^-10τ-1/2 has been successfully achieved, which demonstrates that this physics package would become one promising solution for the CSAC.     

基础实验中光速和介质折射率测量方法的研究

采用一种新型光速测定仪测量光速和介质折射率,对测量方法进行了研究和改进,分析了测量误差的来源.在此基础上,采用精密数字相位计代替示波器测量相位,设计了新的测量方案,并采用最小二乘法进行线性拟合,从而提高了测量精度,其精度达到±0.1%.     

同成分掺镁铌酸锂晶体紫外光致吸收阈值效应的研究

研究了同成分掺镁铌酸锂晶体中的紫外光致吸收效应。通过对不同掺Mg浓度铌酸锂晶体的紫外光致吸收系数和双色存储灵敏度的测量,发现同成分掺镁铌酸锂晶体的紫外光致吸收效应具有Mg离子浓度阈值效应。只有当掺Mg摩尔分数大于3．0％时,从近紫外一直延伸到近红外波段的紫外光致吸收效应才显示出来。这一Mg离子浓度阈值效应进一步为双色存储灵敏度的测量结果所证实。该浓度阈值小于掺镁铌酸锂晶体抗光损伤效应的摩尔分数阈值4．6％。这种紫外光致吸收现象可能和掺镁铌酸锂晶体中反位铌NbLi浓度的急剧减少基本消失有关。