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Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition 下载免费PDF全文
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA. 相似文献
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在法拉第效应中,线偏振光通过加有外磁场的磁光介质时,其光矢量发生了旋转.光的偏振方向旋转的角度与磁场沿着光波传播方向的分量呈线性正比关系,因此通过测量旋光角度即可得到相应的磁场大小.本实验创新性地提出基于法拉第磁光效应测量空间磁场的方法,利用了半影法减小测角器的测量误差,更加精准地找到了消光位置.实验测得实验室环境中空间磁场的磁感应强度B=0.287 mT,并得到磁偏角大小为θ=7.688°.与使用磁阻传感器进行测量的数据相比,磁感应强度的相对误差为η_B=4.6%,磁偏角的相对误差为η_θ=9.8%. 相似文献
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