EAST等离子体电子温度涨落特征的初步实验研究

在EAST上使用相关电子回旋辐射(CECE)诊断系统观测到不同等离子体参数下的电子温度涨落特征,介绍了欧姆放电、L模放电及无ELM的H模放电的三种现象。在欧姆密度爬升等离子体中,电子温度涨落与电子密度之间表现出很强的相关性,即存在电子温度涨落处于较高水平的电子密度的窗口。初步分析表明,电子温度涨落变化是电子密度梯度和电子温度梯度共同影响的结果。不同辅助加热下的L模等离子体中,电子温度涨落的频谱表现出不同的行为。由于电子回旋共振加热(ECRH)的功率有限,其对电子温度的改变很小,而中性束注入(NBI)有较高的注入功率,能够明显提升电子温度,加热方式及加热功率大小引起的电子温度变化与电子温度涨落变化相关。在没有边缘局域模(ELM)的H模期间,可以观测到频率为18kHz的准相干模,其存在于归一化半径ρ=0.71～0.87较宽的径向范围内。     

柔性扑翼的气动特性研究

以往扑翼的气动力计算研究都很少考虑扑翼的柔性,而在鸟的扑翼动作中,在外加气动力和鸟自身的扑动力作用下,扑翼的柔性变形相当大。本文在原有匀速刚性模型的基础上,提出考虑了扑翼扑动速率变化和形状变化的扑翼分析模型,使之更接近鸟翼柔性扑动真实情况。通过计算分析气动特性发现,控制适当的话,柔性变形能大大改善扑翼的气动性能。本文通过模拟鸟扑翼的柔性运动,计算了时柔性扑翼气动力以及平均升力系数和平均推力系数随着扑动角、倾斜角等参数变化的情况,从而从气动的角度解释了为什么鸟在不同的飞行阶段扑翼规律各不相同,并为柔性扑翼飞行器的设计提供了理论依据。     

Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing

We reported a chalcogenide glass-based rib waveguide fabricated using photolithography and dry etching method. A commercial software(COMSOL Multiphysics) was used to optimize the waveguide structure and the distribution of the fundamental modes in the waveguide based on the complete vector finite component. We further employed thermal annealing to optimize the surface and sidewalls of the rib waveguides. It was found that the optimal annealing temperature for Ge As Se S films is 220℃, and the roughness of the films could be significantly reduced by annealing. The zero-dispersion wavelength(ZDW) could be shifted to a short wavelength around ~2.1 μm via waveguide structural optimization, which promotes supercontinuum generation with a short wavelength pump laser source. The insertion loss of the waveguides with cross-sectional areas of 4.0 μm×3.5 μm and 6.0 μm×3.5 μm was measured using lens fiber and the cut-back method. The propagation loss of the 220℃ annealed waveguides could be as low as 1.9 d B/cm at 1550 nm.     

SEGREGATED VECTOR SOLUTIONS FOR NONLINEAR SCHR?DINGER SYSTEMS IN R~2

We study the following nonlinear Schrodinger system where P(τ) and Q(τ) are positive radial functions,μ 0,v 0,and β∈ R is a coupling constant.This type of system arises,particularly,in models in Bose-Einstein condensates theory.Applying a finite reduction method,we construct an unbounded sequence of nonradial positive vector solutions of segregated type when β is in some suitable interval,which gives an answer to an interesting problem raised by Peng and Wang in Remark 4.1(Arch.Ration.Mech.Anal.,208(2013),305-339).     

Wn C0,±(n=1,…,6)团簇结构与电子性质的理论研究

利用密度泛函理论(DFT)中的杂化密度泛函B3LYP在Lanl2dz基组水平上对WnC0.±(n=1,…,6)团簇的各种可能构型进行几何结构优化,得出它们的基态构型,并对基态构型的稳定性和电子性质进行理论研究.结果表明,当n＞3时,稳定构型从平面转变成立体结构,同时C原子趋向于表面最稳定;C原子的掺入使得Wn团簇的稳定...     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

氢化物气相外延生长的GaN膜中的应力分析

对在c面蓝宝石上用氢化物气相外延法(HVPE)生长的六方相纤锌矿结构的GaN膜中的应力进行了分析。高分辨X射线衍射(002)面和(102)面摇摆曲线扫描(半高宽数值分别为317和358角秒)表明生长的GaN膜具有较好的晶体质量。利用高分辨X射线衍射技术准确测量了制备的GaN膜的晶格常数,并计算得到GaN膜中面内双轴应变和面外双轴应变分别为3.37×10-4和-8.52×10-4,等静压应变为-7.61×10-5。拉曼光谱和激光光致发光谱测试表明HVPE-GaN外延膜具有较好的光学特性,利用拉曼光谱的E₂模式特征峰和激光光致发光谱中近带边发射峰的频移定量计算了外延膜中的面内双轴压应力和等静压应力。两种方法得到的面内双轴压应力较为相符。     

建筑构件内瞬态热湿分析中的多层求解方法

提出了一种求解一维多层建筑构件内瞬态耦合传热传质问题的有限差分逼近方法.求解过程中认为构件的内外表面处的热湿传递为瞬态过程,并考虑了多层墙体每一层物性参数的非连续性,从而避免了通常处理中边界条件设定为常数给计算带来的误差.利用该方法对典型的三层墙体层与层界面处相对湿度在24小时内的变化进行了计算,计算结果与文[6]的传递函数求解方法符合很好,可推广应用到对二维和三维耦合传热传湿问题的求解.