Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing

We reported a chalcogenide glass-based rib waveguide fabricated using photolithography and dry etching method. A commercial software(COMSOL Multiphysics) was used to optimize the waveguide structure and the distribution of the fundamental modes in the waveguide based on the complete vector finite component. We further employed thermal annealing to optimize the surface and sidewalls of the rib waveguides. It was found that the optimal annealing temperature for Ge As Se S films is 220℃, and the roughness of the films could be significantly reduced by annealing. The zero-dispersion wavelength(ZDW) could be shifted to a short wavelength around ~2.1 μm via waveguide structural optimization, which promotes supercontinuum generation with a short wavelength pump laser source. The insertion loss of the waveguides with cross-sectional areas of 4.0 μm×3.5 μm and 6.0 μm×3.5 μm was measured using lens fiber and the cut-back method. The propagation loss of the 220℃ annealed waveguides could be as low as 1.9 d B/cm at 1550 nm.     

SEGREGATED VECTOR SOLUTIONS FOR NONLINEAR SCHR?DINGER SYSTEMS IN R~2

We study the following nonlinear Schrodinger system where P(τ) and Q(τ) are positive radial functions,μ 0,v 0,and β∈ R is a coupling constant.This type of system arises,particularly,in models in Bose-Einstein condensates theory.Applying a finite reduction method,we construct an unbounded sequence of nonradial positive vector solutions of segregated type when β is in some suitable interval,which gives an answer to an interesting problem raised by Peng and Wang in Remark 4.1(Arch.Ration.Mech.Anal.,208(2013),305-339).     

Wn C0,±(n=1,…,6)团簇结构与电子性质的理论研究

利用密度泛函理论(DFT)中的杂化密度泛函B3LYP在Lanl2dz基组水平上对WnC0.±(n=1,…,6)团簇的各种可能构型进行几何结构优化,得出它们的基态构型,并对基态构型的稳定性和电子性质进行理论研究.结果表明,当n＞3时,稳定构型从平面转变成立体结构,同时C原子趋向于表面最稳定;C原子的掺入使得Wn团簇的稳定...     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Dielectronic recombination and resonant transfer excitation processes for helium-like krypton

The relativistic configuration interaction method is employed to calculate the dielectronic recombination(DR) cross sections of helium-like krypton via the 1s2lnl ’(n = 2,3,...,15) resonances.Then,the resonant transfer excitation(RTE) processes of Kr 34+ colliding with H,He,H 2,and CH x(x = 0-4) targets are investigated under the impulse approximation.The needed Compton profiles of targets are obtained from the Hartree-Fock wave functions.The RTE cross sections are strongly dependent on DR resonant energies and strengths,and the electron momentum distributions of the target.For H 2 and H targets,the ratio of their RTE cross sections changes from 1.85 for the 1s2l2l ’ to 1.88 for other resonances,which demonstrates the weak molecular effects on the Compton profiles of H 2.For CH x(x = 0-4) targets,the main contribution to the RTE cross section comes from the carbon atom since carbon carries 6 electrons;as the number of hydrogen increases in CH x,the RTE cross section almost increases by the same value,displaying the strong separate atom character for the hydrogen.However,further comparison of the individual orbital contributions of C(2p,2s,1s) and CH 4(1t 2,2a 1,1a 1) to the RTE cross sections shows that the molecular effects induce differences of about 25.1%,19.9%,and 0.2% between 2p-1t 2,2s-2a 1,and 1s-1a 1 orbitals,respectively.     

氢化物气相外延生长的GaN膜中的应力分析

对在c面蓝宝石上用氢化物气相外延法(HVPE)生长的六方相纤锌矿结构的GaN膜中的应力进行了分析。高分辨X射线衍射(002)面和(102)面摇摆曲线扫描(半高宽数值分别为317和358角秒)表明生长的GaN膜具有较好的晶体质量。利用高分辨X射线衍射技术准确测量了制备的GaN膜的晶格常数,并计算得到GaN膜中面内双轴应变和面外双轴应变分别为3.37×10-4和-8.52×10-4,等静压应变为-7.61×10-5。拉曼光谱和激光光致发光谱测试表明HVPE-GaN外延膜具有较好的光学特性,利用拉曼光谱的E₂模式特征峰和激光光致发光谱中近带边发射峰的频移定量计算了外延膜中的面内双轴压应力和等静压应力。两种方法得到的面内双轴压应力较为相符。     

非晶物质中的临界现象

非晶态材料有着复杂的原子结构(短程有序、长程无序)和特殊的物理性质,其临界现象和相变问题一直受到学术界关注.非晶合金,又称为金属玻璃,是一种新型的非晶态材料,具有很高的强度和优异的弹性.从微观的角度来看,非晶合金可以看作是一个多粒子系统.临界现象的研究对认识和理解多粒子系统之间的相互作用有深刻的意义.本文主要讨论非晶合金中的临界现象,包括非晶合金从制备过程、微观结构到宏观的力学性能以及磁性方面存在的临界现象,并分析这些临界现象之间的内在联系,进而深入理解非晶合金的微观结构对其宏观性质的影响.这为认识非晶合金的形成本质,提高服役可靠性,探索具有实际应用价值的非晶合金提供理论依据.     

三圆盘扭振系统主共振的理论与实验研究

本文应用非线性振动的平均法，分析了一个具有立方非线性并受简谐激励作用的三圆盘扭振系统的第二阶主共振，求得了稳态响应的分岔方程，并进行了奇异性分析，理论结果与实验结果相符·     

应用保角变换法的亚音速矩形湍流射流理论研究

为求解亚音速矩形湍流射流的速度场结构,采用复变函数中的保角变换法将圆形喷口平面转化为矩形喷口平面;进而将已有的关于轴对称喷口射流流场的相关理论拓展到矩形喷口射流研究中,避免了在数值模拟中引入辅助方程、离散化、设置边界条件来求解三维N-S方程。通过该方法得到了矩形喷口宽高比AR分别为2、4、8时对射流结构的定量影响;求出了喷口尺寸为1×5mm2、喷口马赫数Ma=0.3时,喷口对称中心的宽、窄对称面内的速度云图。结果表明:宽高比AR越大,射流核心段长度越长,轴向衰减越慢;喷口面积为10cm2、20cm2时,加大宽高比可以缩短核心段长度且可加快轴向速度衰减,在射流宽、窄对称面都存在射流核心区与衰减区。首次提出速度分布的"马鞍面"主要集中在射流核心段内。通过与现有实验研究结果对比发现:核心段长度误差最小达到30%;轴向速度分布与实验结果吻合度也很高,误差在5%以内。因此,本文理论研究的正确性得到验证。本文所得结论可为进一步研究亚音速矩形射流结构与矩形喷口参数优化设计提供参考。